Abstract: A semiconductor integrated circuit includes a high-side transistor, a low-side transistor, a level shift circuit for driving the high-side transistor, and a pre-driver circuit for driving the low-side transistor. A connection point of the high-side transistor and the low-side transistor serves as an output terminal. The level shift circuit has first and second N-type MOS transistors whose gates are driven by the pre-driver circuit. The semiconductor integrated circuit further includes a diode whose anode is connected to the drain of the first or second N-type MOS transistor to which the gate of the high-side transistor is not connected, and whose cathode is connected to the output terminal.

Abstract: A PDP-driving semiconductor integrated circuit includes a plurality of PDP drivers each for converting an input signal into a high-voltage pulse having an amplitude greater than that of the input signal and outputting the high-voltage pulse. The PDP-driving semiconductor integrated circuit has a function of performing sequential operation in which the PDP drivers operate at different timings and sequentially output the high-voltage pulses and a function of performing simultaneous operation in which the PDP drivers operate at the same timing and output the high-voltage pulses at a time. In each of the sequential operation and the simultaneous operation, at least one of the speed of change in voltage level of the high-voltage pulse from a low level to a high level and the speed of change in voltage level of the high-voltage pulse from the high level to the low level is controlled.

Abstract: A semiconductor integrated circuit includes a plurality of circuit cells on a semiconductor chip. The plurality of circuit cells are formed along a first chip side of the semiconductor chip. Each of the plurality of circuit cells has a pad. The semiconductor integrated circuit further includes a high voltage potential interconnect formed over the plurality of circuit cells. The high voltage potential interconnect has a width expanding in a length direction from a center portion to end portions of the high voltage potential interconnect.

Abstract: A semiconductor integrated circuit includes a high-side transistor, a low-side transistor, a level shift circuit for driving the high-side transistor, and a pre-driver circuit for driving the low-side transistor. A connection point of the high-side transistor and the low-side transistor serves as an output terminal. The level shift circuit has first and second N-type MOS transistors whose gates are driven by the pre-driver circuit. The semiconductor integrated circuit further includes a diode whose anode is connected to the drain of the first or second N-type MOS transistor to which the gate of the high-side transistor is not connected, and whose cathode is connected to the output terminal.