Abstract: Memory openings and support openings are formed in a memory array region and a staircase region, respectively, through an alternating stack of insulating layers and spacer material layers. Pedestal channel portions and pedestal semiconductor portions are formed at the bottom of the memory openings and the support openings, respectively. Semiconductor oxide plates are provided only in a distal subset of the support openings that are spaced from the memory array region by more than a threshold separation distance. Memory openings are filled with memory opening fill structures, and support openings are filled with support pillar structures. Proximal support pillar structures located adjacent to the memory array region provide internal electrically conductive paths for discharging accumulated electrical charges.

Abstract: A stepped structure is formed on a stack of an alternating plurality of insulator layers and material layers such that at least two material layers have vertically coincident sidewalls. In one embodiment, the material layers can be electrically conductive layers, and a contact via structure can contact the vertically coincident sidewalls. In another embodiment, a sacrificial spacer can be formed on the vertically coincident sidewalls, and the material layers and the sacrificial spacer can be replaced with a conductive material. A contact via structure can be formed on a set of layers electrically shorted by a vertical conductive material portion that is formed in a volume of the spacer. The contact via structure can provide electrical contact to multiple electrically conductive layers.

Abstract: A stepped structure is formed on a stack of an alternating plurality of insulator layers and material layers such that at least two material layers have vertically coincident sidewalls. In one embodiment, the material layers can be electrically conductive layers, and a contact via structure can contact the vertically coincident sidewalls. In another embodiment, a sacrificial spacer can be formed on the vertically coincident sidewalls, and the material layers and the sacrificial spacer can be replaced with a conductive material. A contact via structure can be formed on a set of layers electrically shorted by a vertical conductive material portion that is formed in a volume of the spacer. The contact via structure can provide electrical contact to multiple electrically conductive layers.