Patents by Inventor Naoki Iwamasa

Naoki Iwamasa has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10896825
    Abstract: A mold according to an embodiment includes a first surface to be in contact with a surface of a substrate to be processed. A cavity portion recedes in a first direction being away from the first surface. A vent portion recedes in the first direction and is closer to the first surface than the cavity portion. The vent portion communicates with the cavity portion and serves as a discharge path for gas in the cavity portion. A suction portion recedes in the first direction and is farther from the first surface than the vent portion. The suction portion communicates with the vent portion. A first opening/closing portion is provided between the vent portion and the suction portion, and opens and closes or narrows down the discharge path. A second opening/closing portion is provided between the first opening/closing portion and the suction portion, and opens and closes the discharge path.
    Type: Grant
    Filed: September 14, 2017
    Date of Patent: January 19, 2021
    Assignee: TOSHIBA MEMORY CORPORATION
    Inventors: Takeori Maeda, Ryoji Matsushima, Makoto Minaminaka, Naoki Iwamasa
  • Publication number: 20180254198
    Abstract: A mold according to an embodiment includes a first surface to be in contact with a surface of a substrate to be processed. A cavity portion recedes in a first direction being away from the first surface. A vent portion recedes in the first direction and is closer to the first surface than the cavity portion. The vent portion communicates with the cavity portion and serves as a discharge path for gas in the cavity portion. A suction portion recedes in the first direction and is farther from the first surface than the vent portion. The suction portion communicates with the vent portion. A first opening/closing portion is provided between the vent portion and the suction portion, and opens and closes or narrows down the discharge path. A second opening/closing portion is provided between the first opening/closing portion and the suction portion, and opens and closes the discharge path.
    Type: Application
    Filed: September 14, 2017
    Publication date: September 6, 2018
    Applicant: TOSHIBA MEMORY CORPORATION
    Inventors: Takeori MAEDA, Ryoji MATSUSHIMA, Makoto MINAMINAKA, Naoki IWAMASA
  • Patent number: 8896111
    Abstract: In one embodiment, a semiconductor device includes a first semiconductor chip disposed on a circuit board, an adhesive layer fixing the first semiconductor chip to the circuit board, and a second semiconductor chip having an outer shape smaller than that of the first semiconductor chip. At least a part of the second semiconductor chip is embedded in the adhesive layer. The adhesive layer has a thickness in a range of 95 to 150 ?m. The adhesive layer includes a cured product of a thermosetting resin whose thermal time viscosity at a time that the second semiconductor chip is embedded is in a range of 500 to 5000 Pa·s.
    Type: Grant
    Filed: March 12, 2013
    Date of Patent: November 25, 2014
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Akira Tanimoto, Takashi Imoto, Yoriyasu Ando, Masashi Noda, Naoki Iwamasa, Koichi Miyashita, Masatoshi Kawato, Masaji Iwamoto, Jun Tanaka, Yusuke Dohmae
  • Publication number: 20140070428
    Abstract: In one embodiment, a semiconductor device includes a first semiconductor chip disposed on a circuit board, an adhesive layer fixing the first semiconductor chip to the circuit board, and a second semiconductor chip having an outer shape smaller than that of the first semiconductor chip. At least a part of the second semiconductor chip is embedded in the adhesive layer. The adhesive layer has a thickness in a range of 95 to 150 ?m. The adhesive layer includes a cured product of a thermosetting resin whose thermal time viscosity at a time that the second semiconductor chip is embedded is in a range of 500 to 5000 Pa·s.
    Type: Application
    Filed: March 12, 2013
    Publication date: March 13, 2014
    Applicant: Kabushiki Kaisha Toshiba
    Inventors: Akira TANIMOTO, Takashi Imoto, Yoriyasu Ando, Masashi Noda, Naoki Iwamasa, Koichi Miyashita, Masatoshi Kawato, Masaji Iwamoto, Jun Tanaka, Yusuek Dohmae