Abstract: A semiconductor device having favorable electrical characteristics is provided. A first oxide is formed over a substrate; a first insulator is formed over the first oxide; an opening reaching the first oxide is formed in the first insulator; a first oxide film is deposited in contact with the first oxide and the first insulator in the opening; a first insulating film is deposited over the first oxide film; microwave treatment is performed from above the first insulating film; heat treatment is performed on one or both of the first insulating film and the first oxide; a first conductive film is deposited over the first insulating film; and part of the first oxide film, part of the first insulating film, and part of the first conductive film are removed until a top surface of the first insulator is exposed, so that a second oxide, a second insulator, and a first conductor are formed.

Abstract: A method for preventing dozing off, comprising the steps of: a measurement step measuring human heartbeats; a decision step (S4 to S8) generating a trigger, hereinafter referred to as a “drowsiness trigger”, for indicating occurrence of drowsiness when a state in which a time interval between adjacent heartbeats, hereinafter referred to as a “heartbeat interval”, is longer than the previous heartbeat interval consecutively occurs; and a warning step (S9) giving a warning to prevent dozing off when the drowsiness trigger is generated.

Abstract: A method for preventing dozing off, comprising the steps of: a measurement step measuring human heartbeats; a decision step (S4 to S8) generating a trigger, hereinafter referred to as a “drowsiness trigger”, for indicating occurrence of drowsiness when a state in which a time interval between adjacent heartbeats, hereinafter referred to as a “heartbeat interval”, is longer than the previous heartbeat interval consecutively occurs; and a warning step (S9) giving a warning to prevent dozing off when the drowsiness trigger is generated.