Abstract: A light emitting element includes: a semiconductor stack structure that includes a light emitting part, and a light receiving part that receives light propagating in a lateral direction through a semiconductor layer from the light emitting part, wherein the light emitting part and the light receiving part share a quantum layer; and a light reflection layer that covers ? or more of a lateral surface of the quantum layer in the light receiving part.

Abstract: A light emitting element array includes plural semiconductor stacking structures and a light screening portion. The plural semiconductor stacking structures each include a light emitting portion and a light receiving portion that receives light propagated in a lateral direction via a semiconductor layer from the light emitting portion. The light screening portion is provided between the plural semiconductor stacking structures to screen light directed from the light emitting portion of one of the semiconductor stacking structures to the light receiving portion of another semiconductor stacking structure.

Abstract: A light emitting element includes: a light emitting part that is formed on a front surface side of a semi-insulating substrate; and a light receiving part that is formed on the front surface side, that shares a semiconductor layer with the light emitting part, and that receives light propagating in a lateral direction through the semiconductor layer from the light emitting part, wherein anode electrodes and cathode electrodes of the light emitting part and the light receiving part are formed on the front surface side in a state in which the anode electrodes are separated from each other and the cathode electrodes are separated from each other.

Abstract: A light emitting apparatus includes: a semiconductor layer including a light emitting region that generates modulation light modulated with a first signal, and a feedback region that is configured so that a feedback mode to feed back a part of light generated in the light emitting region to the light emitting region and a monitor mode to monitor a light amount of the light generated in the light emitting region are switchable; and a controller, wherein when the modulation light is generated in the light emitting region, the controller sets the feedback region to the feedback mode, and the controller switches the feedback region to the monitor mode during at least a part of a period in which there is no first signal.

Abstract: A light emitting element array includes plural semiconductor stacked structures each including a light emitting unit that is formed on a substrate, and a light amplification unit that extends from the light emitting unit along a substrate surface of the substrate to have a length in an extension direction which is longer than that of the light emitting unit, amplifies light propagating in the extension direction from the light emitting unit, and emits the amplified light from a light emission portion formed along the extension direction, wherein the plural semiconductor stacked structures are arranged such that the extension directions of the respective light amplification units are substantially parallel to each other.

Abstract: A surface-emitting semiconductor laser includes a first semiconductor multilayer film reflector, an active region, a second semiconductor multilayer film reflector, and a current confinement layer including an oxidized region formed by selective oxidation. The current confinement layer includes a first semiconductor layer having a relatively high Al content, a second semiconductor layer that is adjacent to the first semiconductor layer on an active-region side of the first semiconductor layer and has a lower Al content than the first semiconductor layer, and a composition-gradient layer adjacent to the first semiconductor layer on a side of the first semiconductor layer which is opposite to the active-region side. A portion of the composition-gradient layer which faces the first semiconductor layer has a lower Al content than the first semiconductor layer.

Abstract: A light emitting apparatus includes: a semiconductor layer including a light emitting region that generates modulation light modulated with a first signal, and a feedback region that is configured so that a feedback mode to feed back a part of light generated in the light emitting region to the light emitting region and a monitor mode to monitor a light amount of the light generated in the light emitting region are switchable; and a controller, wherein when the modulation light is generated in the light emitting region, the controller sets the feedback region to the feedback mode, and the controller switches the feedback region to the monitor mode during at least a part of a period in which there is no first signal.

Abstract: A light emitting element array includes plural semiconductor stacked structures each including a light emitting unit that is formed on a substrate, and a light amplification unit that extends from the light emitting unit along a substrate surface of the substrate to have a length in an extension direction which is longer than that of the light emitting unit, amplifies light propagating in the extension direction from the light emitting unit, and emits the amplified light from a light emission portion formed along the extension direction, wherein the plural semiconductor stacked structures are arranged such that the extension directions of the respective light amplification units are substantially parallel to each other.

Abstract: A light emitting element array includes plural semiconductor stacking structures and a light screening portion. The plural semiconductor stacking structures each include a light emitting portion and a light receiving portion that receives light propagated in a lateral direction via a semiconductor layer from the light emitting portion. The light screening portion is provided between the plural semiconductor stacking structures to screen light directed from the light emitting portion of one of the semiconductor stacking structures to the light receiving portion of another semiconductor stacking structure.

Abstract: A light emitting element includes: a semiconductor stack structure that includes a light emitting part, and a light receiving part that receives light propagating in a lateral direction through a semiconductor layer from the light emitting part, wherein the light emitting part and the light receiving part share a quantum layer; and a light reflection layer that covers ? or more of a lateral surface of the quantum layer in the light receiving part.

Abstract: A light emitting device includes: a first mesa structure including a light emitting part; a second mesa structure that is connected to the first mesa structure by a common semiconductor layer and that includes a light receiving part that receives light propagating in a lateral direction through the semiconductor layer from the light emitting part; a detector that detects an amount of the light received by the light receiving part; and an oxide confinement layer that is formed over the first mesa structure and the second mesa structure and that includes an oxidized region and a non-oxidized region.

Abstract: A light emitting element includes: a light emitting part that is formed on a front surface side of a semi-insulating substrate; and a light receiving part that is formed on the front surface side, that shares a semiconductor layer with the light emitting part, and that receives light propagating in a lateral direction through the semiconductor layer from the light emitting part, wherein anode electrodes and cathode electrodes of the light emitting part and the light receiving part are formed on the front surface side in a state in which the anode electrodes are separated from each other and the cathode electrodes are separated from each other.

Abstract: A vertical-cavity surface-emitting laser diode includes: a first resonator that has a plurality of semiconductor layers comprising a first current narrowing structure having a first conductive region and a first non-conductor region; a first electrode that supplies electric power to drive the first resonator; a second resonator that has a plurality of semiconductor layers comprising a second current narrowing structure having a second conductive region and a second non-conductive region and that is formed side by side with the first resonator, the second current narrowing structure being formed in same current narrowing layer as the layer where the first current narrowing structure is formed; and a coupling portion as defined herein; and an equivalent refractive index of the coupling portion is smaller than an equivalent refractive index of each of the first resonator and the second resonator.

Abstract: A vertical cavity surface emitting laser array includes a contact layer formed on a substrate; mesa structures formed on the contact layer, each mesa structure including a first semiconductor multilayer reflector of a first conductivity type, an active region on the first semiconductor multilayer reflector, and a second semiconductor multilayer reflector of a second conductivity type on the active region; a first metal layer formed on the contact layer around the mesa structures, a portion of the first metal layer serving as an electrode pad of the first conductivity type; an insulating film formed on the first metal layer; and a second metal layer formed on the insulating film, a portion of the second metal layer serving as an electrode pad of the second conductivity type. The mesa structures are electrically connected in parallel.

Abstract: Provided is a method of manufacturing a surface-emitting semiconductor laser element including a first process of forming, on a substrate, a semiconductor layer that includes a first semiconductor multilayer reflection mirror, a rough surface formation layer, an active region, a second semiconductor multilayer reflection mirror, and a current confining layer, a second process of forming a mesa structure of the semiconductor layer by etching the semiconductor layer until the rough surface formation layer is exposed, a third process of oxidizing a region including the current confining layer and the rough surface formation layer exposed to the circumference of the mesa structure, a fourth process of forming a rough surface region by performing an acid treatment on a region including the oxidized rough surface formation layer, and a fifth process of forming an insulating film on the region including the rough surface region.

Abstract: There is provided a surface emitting semiconductor laser including: a substrate; and a semiconductor layer including: a first semiconductor multilayer film having plural sets of specific layers, a second semiconductor multilayer film having plural sets of specific layers, and an active layer provided between them, so as to constitute a resonator.

Abstract: A method of manufacturing an optical semiconductor element includes: a first step in which a columnar structure of a semiconductor layer formed on a semi-insulating substrate is formed; a second step in which the substrate is exposed in a periphery of the columnar structure; a third step in which a region including exposed surfaces of the first contact layer and the substrate is pretreated; a fourth step in which a first electrode is formed on the exposed surface of the first contact layer; a fifth step in which an interlayer insulating film is formed in a region including a side surface of the columnar structure and the exposed surfaces; a sixth step in which a first electrode wiring is formed on the interlayer insulating film; and a seventh step in which a second electrode wiring is formed on the interlayer insulating film.

Abstract: Provided is a method of manufacturing a surface-emitting semiconductor laser element including a first process of forming, on a substrate, a semiconductor layer that includes a first semiconductor multilayer reflection mirror, a rough surface formation layer, an active region, a second semiconductor multilayer reflection mirror, and a current confining layer, a second process of forming a mesa structure of the semiconductor layer by etching the semiconductor layer until the rough surface formation layer is exposed, a third process of oxidizing a region including the current confining layer and the rough surface formation layer exposed to the circumference of the mesa structure, a fourth process of forming a rough surface region by performing an acid treatment on a region including the oxidized rough surface formation layer, and a fifth process of forming an insulating film on the region including the rough surface region.

Abstract: A vertical cavity surface emitting laser array includes a contact layer formed on a substrate; mesa structures formed on the contact layer, each mesa structure including a first semiconductor multilayer reflector of a first conductivity type, an active region on the first semiconductor multilayer reflector, and a second semiconductor multilayer reflector of a second conductivity type on the active region; a first metal layer formed on the contact layer around the mesa structures, a portion of the first metal layer serving as an electrode pad of the first conductivity type; an insulating film formed on the first metal layer; and a second metal layer formed on the insulating film, a portion of the second metal layer serving as an electrode pad of the second conductivity type. The mesa structures are electrically connected in parallel.

Abstract: A method of manufacturing an optical semiconductor element includes: a first step in which a columnar structure of a semiconductor layer formed on a semi-insulating substrate is formed; a second step in which the substrate is exposed in a periphery of the columnar structure; a third step in which a region including exposed surfaces of the first contact layer and the substrate is pretreated; a fourth step in which a first electrode is formed on the exposed surface of the first contact layer; a fifth step in which an interlayer insulating film is formed in a region including a side surface of the columnar structure and the exposed surfaces; a sixth step in which a first electrode wiring is formed on the interlayer insulating film; and a seventh step in which a second electrode wiring is formed on the interlayer insulating film.