Abstract: A glass building material according to the present disclosure includes: a first photovoltaic string of a bifacial light-receiving type which has a shape extending in one direction; a second photovoltaic string of a bifacial light-receiving type which is arranged next to the first photovoltaic string in a width direction, and which has a shape extending in the one direction; a first glass substrate which is configured to cover one surface of the first photovoltaic string and one surface of the second photovoltaic string; and a reflective film which is arranged on at least part of another surface side of the first photovoltaic string and another surface side of the second photovoltaic string, which has a transmittance higher than a reflectance in a visible light region, and which has a reflectance higher than a transmittance in a near-infrared region.

Abstract: An operation determination unit (21) determines whether or not a rotational operation or a decision operation has been performed on an operation device (11), on a basis of at least either a set of contact positions of multiple protrusions (11a) or a set of pressing forces of the multiple protrusions (11a) detected by a touch panel (12). A rotation amount storing unit (22) stores, when it is determined by the operation determination unit (21) that the rotational operation has been performed, information of a rotation amount due to the rotational operation. A control unit (23) controls, when it is determined by the operation determination unit (21) that the decision operation has been performed, a control target device by using information of the rotation amount stored in the rotation amount storing unit (22).

Abstract: A solar cell module mounting system for fixing a plurality of solar cell modules to a side wall of a building, the plurality of solar cell modules include a plurality of first solar cell modules. Each of the plurality of first solar cell modules includes a first side and a second side, the first side being proximal to the side wall of the building, the second side being distally positioned and lower than the first side and/or at a position outwardly away from the side wall part of the building. The plurality of the first solar cell modules are arranged vertically, and a relationship of 16??1?(32/11)?56 is satisfied for adjacent vertically arranged first solar cell modules.

Abstract: A glass building material according to the present disclosure includes: a first photovoltaic string of a bifacial light-receiving type which has a shape extending in one direction; a second photovoltaic string of a bifacial light-receiving type which is arranged next to the first photovoltaic string in a width direction, and which has a shape extending in the one direction; a first glass substrate which is configured to cover one surface of the first photovoltaic string and one surface of the second photovoltaic string; and a reflective film which is arranged on at least part of another surface side of the first photovoltaic string and another surface side of the second photovoltaic string, which has a transmittance higher than a reflectance in a visible light region, and which has a reflectance higher than a transmittance in a near-infrared region.

Abstract: A solar cell module mounting system for fixing a plurality of solar cell modules to a side wall of a building, the plurality of solar cell modules include a plurality of first solar cell modules. Each of the plurality of first solar cell modules includes a first side and a second side, the first side being proximal to the side wall of the building, the second side being distally positioned and lower than the first side and/or at a position outwardly away from the side wall part of the building. The plurality of the first solar cell modules are arranged vertically, and a relationship of 16??1?(32/11)?56 is satisfied for adjacent vertically arranged first solar cell modules.

Abstract: A conventional thin-film photoelectric converter using amorphous germanium or crystalline silicon as a photoelectric conversion layer is problematic in that light having a long wavelength of 1100 nm or more cannot be used for photoelectric conversion, and is inefficient. The problem is solved by a thin-film photoelectric converter including one or more photoelectric conversion units each having a photoelectric conversion layer sandwiched between a p-type semiconductor layer and an n-type semiconductor layer, wherein the photoelectric conversion layer of at least one photoelectric conversion unit includes an intrinsic or weak n-type crystalline germanium semiconductor, and the absorption coefficient of infrared-absorption peak at wave number of 935±5 cm?1 of the crystalline germanium semiconductor is less than 6000 cm?1.

Abstract: A thin-film photoelectric conversion device includes a crystalline germanium photoelectric conversion layer having improved open circuit voltage, fill factor, and photoelectric conversion efficiency for light having a longer wavelength. The photoelectric conversion device comprises a first electrode layer, one or more photoelectric conversion units, and a second electrode layer sequentially stacked on a substrate, wherein each of the photoelectric conversion units comprises a photoelectric conversion layer arranged between a p-type semiconductor layer and an n-type semiconductor layer. At least one of the photoelectric conversion units includes a crystalline germanium photoelectric conversion layer comprising a crystalline germanium semiconductor that is substantially intrinsic or weak n-type and is essentially free of silicon.

Abstract: A thin-film photoelectric conversion device includes a crystalline germanium photoelectric conversion layer having improved open circuit voltage, fill factor, and photoelectric conversion efficiency for light having a longer wavelength. The photoelectric conversion device comprises a first electrode layer, one or more photoelectric conversion units, and a second electrode layer sequentially stacked on a substrate, wherein each of the photoelectric conversion units comprises a photoelectric conversion layer arranged between a p-type semiconductor layer and an n-type semiconductor layer. At least one of the photoelectric conversion units includes a crystalline germanium photoelectric conversion layer comprising a crystalline germanium semiconductor that is substantially intrinsic or weak n-type and is essentially free of silicon.

Abstract: A conventional thin-film photoelectric converter using amorphous germanium or crystalline silicon as a photoelectric conversion layer is problematic in that light having a long wavelength of 1100 nm or more cannot be used for photoelectric conversion, and is inefficient. The problem is solved by a thin-film photoelectric converter including one or more photoelectric conversion units each having a photoelectric conversion layer sandwiched between a p-type semiconductor layer and an n-type semiconductor layer, wherein the photoelectric conversion layer of at least one photoelectric conversion unit includes an intrinsic or weak n-type crystalline germanium semiconductor, and the absorption coefficient of infrared-absorption peak at wave number of 935±5 cm?1 of the crystalline germanium semiconductor is less than 6000 cm?1.