Abstract: An anodic bondable low-temperature fired porcelain having high-strength and low-thermal-expansion, wherein a conductive ion during anodic bonding is an Li ion, containing a complex oxide having a composition represented by the following formula: (1?x)(?Li2O-?MgO-?Al2O3-?Si2O2).xBi2O3??(1) where x represents a mass ratio of 0.01 to 0.1, and ?, ?, ? and ? have a molar ratio of 2 to 5:1 to 2:1 to 2:7 to 17.

Abstract: An anodic bondable low-temperature fired porcelain having high-strength and low-thermal-expansion, wherein a conductive ion during anodic bonding is an Li ion, containing a complex oxide having a composition represented by the following formula: (1?x)(?Li2O-?MgO-?Al2O3-?Si2O2).xBi2O3??(1) where x represents a mass ratio of 0.01 to 0.1, and ?, ?, ? and ? have a molar ratio of 2 to 5:1 to 2:1 to 2:7 to 17.

Abstract: The present invention provides a thermoelectric conversion module, comprising plural first electrode films (11, 12, 13) formed apart from each other on the top surface of an insulating body (10), plural p- and n-type thermoelectric semiconductor element films (16, 19) and (17, 18) formed thereon, which are arranged apart from each other so that p- and n-type thermoelectric semiconductor element films alternate with each other, and second electrode films (20) connecting p-type thermoelectric semiconductor element film (19) and n-type thermoelectric semiconductor element film (18) over the gaps between the first electrode films; and a terminal electrode is connected to each of the p-and n-type thermoelectric semiconductor element film (16, 17) at the end; and a production method thereof.

Abstract: A low temperature sintering ceramic composition can be sintered at 850 to 1,000° C., and the sintered ceramic has a low dielectric constant (9 or less at 16 Ghz or more) and a high Qf (10,000 or more). The composition can be co-sintered with wiring material containing Ag, Au, or Cu. The ceramic composition includes (by mass) CaO, MgO, and SiO2 in total: over 60% to 98.6%; Bi2O3: from 1% to under 35%; and Li2O: from 0.4% to under 6%; wherein (CaO+MgO) and SiO2 are contained in the molar ratio of from 1:1 to under 1:2.5.

Abstract: A low temperature sintering ceramic composition that can be sintered at a temperature equal to or less than 1000° C. and has low dielectric constant and dielectric loss in a high frequency region of 17 Ghz or more, an electronic component using the same and a method of fabricating the low temperature sintering ceramic are provided. The composition comprises MgO and SiO2 in sum total in the range of from 64.0 to 99.2% by mass; Bi2O3 in the range of from 0.4 to 33.0% by mass; Li2O in the range of from 0.4 to 3.0% by mass; and MgO and SiO2 are contained in the molar ratio of from 2:1 to 2:3.5, at least part thereof being contained as a complex oxide of Mg and Si.

Abstract: A low temperature sintering ceramic composition can be sintered at 850 to 1,000° C., and the sintered ceramic has a low dielectric constant (9 or less at 16 Ghz or more) and a high Qf (10,000 or more). The composition can be co-sintered with wiring material containing Ag, Au, or Cu. The ceramic composition includes (by mass) CaO, MgO, and SiO2 in total: over 60% to 98.6%; Bi2O3: from 1% to under 35%; and Li2O: from 0.4% to under 6%; wherein (CaO+MgO) and SiO2 are contained in the molar ratio of from 1:1 to under 1:2.5.

Abstract: A low temperature sintering ceramic composition that can be sintered at a temperature equal to or less than 1000° C. and has low dielectric constant and dielectric loss in a high frequency region of 17 Ghz or more, an electronic component using the same and a method of fabricating the low temperature sintering ceramic are provided. The composition comprises MgO and SiO2 in sum total in the range of from 64.0 to 99.2% by mass; Bi2O3 in the range of from 0.4 to 33.0% by mass; Li2O in the range of from 0.4 to 3.0% by mass; and MgO and SiO2 are contained in the molar ratio of from 2:1 to 2:3.5, at least part thereof being contained as a complex oxide of Mg and Si.