Abstract: A prepreg is provided. The prepreg includes sizing agent-coated carbon fibers and a thermosetting resin composition (B) impregnated between the sizing agent-coated carbon fibers. The sizing agent includes a reactive component (A) having at least three reactive groups per molecule: (i) two or more first functional groups capable of reacting with the thermosetting resin composition (B), and (ii) at least one second functional group different from the two or more first functional groups (i). The second functional group includes at least one of amide, imide, urethane, urea, carbonyl, ester, sulfonyl, aromatic ring, or combinations thereof. The thermosetting resin composition (B) includes at least one thermosetting resin other than an epoxy resin and has a glass transition temperature of 220° C. or more after being cured.

Abstract: A fiber reinforced prepreg comprising reinforcement fibers; particles (D1) and (D2); and a thermosetting resin composition is provided. The resin includes maleimide compound (A), and co-monomer (B). Co-monomer (B) has least one of an alkenylphenol, an alkenylphenoxy, or a diamine group. Particles (D1) are smaller than (D2) and particles (D1) and (D2) are insoluble in the thermosetting resin. Particles (D1) range in diameter from 1 to 10 microns and have a mode on a volume basis from 3 to 6 microns and are present from 3 to 12 percent by volume of the thermosetting resin. Particles (D2) range from 10 to 100 microns diameter and a mode of 20 to 60 microns and are present from 1 to 6 percent by volume of the thermosetting resin composition. After cure, at least 90% by volume of particles (D1) and (D2) remain in the prepreg interlayers.

Abstract: A medical support device includes a processor, in which the processor acquires a medical image, acquires correspondence information in which the medical image is associated in advance with presence or absence of a foreign substance image included in the medical image, generates foreign substance estimation information obtained by estimating the presence or absence of the foreign substance image included in the medical image based on the medical image and the correspondence information, and controls a notification based on the foreign substance estimation information.

Abstract: A method of evaluating equivalence of detection performances of an object to be photographed using a film image and a digital image. The method includes acquiring digital images of the object with varying values of an influence parameter; acquiring digital detection limit values of the respective digital images; specifying a digital detection limit value with highest detection performance from the digital detection limit values; determining that there is equivalence when the specified digital detection limit value is equal to or more than a film detection limit value of the film image, because the detection performance of the object using the digital image assures the detection performance of the object using the film image; and determining that there is no equivalence when the specified digital detection limit value is smaller than the film detection limit value.

Abstract: A method of evaluating equivalence of detection performances of an object to be photographed using a film image and a digital image. The method includes acquiring digital images of the object with varying values of an influence parameter; acquiring digital detection limit values of the respective digital images; specifying a digital detection limit value with highest detection performance from the digital detection limit values; determining that there is equivalence when the specified digital detection limit value is equal to or more than a film detection limit value of the film image, because the detection performance of the object using the digital image assures the detection performance of the object using the film image; and determining that there is no equivalence when the specified digital detection limit value is smaller than the film detection limit value.

Abstract: A semiconductor device includes an insulating film formed over a semiconductor substrate, a Zener diode formed above the insulating film, an interlayer film formed above the Zener diode, and a gate aluminum and a source aluminum formed above the interlayer film. The Zener diode is connected between the gate aluminum and the source aluminum. The Zener diode is formed by alternately joining an N type region and a P type region concentrically. The gate electrode includes a gate pad section. A planar shape of the Zener diode is substantially similar to a planer shape of the gate pad section. The gate pad section extends for a predetermined distance from an outermost edge of the P type region of the Zener diode to outside.

Abstract: In a semiconductor device including a gate electrode buried in a trench of the device, the trench is constructed by a first opening with a uniform width the same as that of an upper portion of the first opening and a second opening beneath the first opening with a width larger than the uniform width. A bottom of a base region adjacent to the trench is adjacent to the second opening.

Abstract: A technology which can realize a high-performance multiband operation in a compact circuit configuration and is advantageous for a wireless terminal of GSM system for which the further increase of the demands is expected in the future is provided. Provided is a multiband switch type antenna duplexer adopted in a mobile phone used in TDMA system such as the GSM system, in which the signals of respectively different first to fourth frequency bands (GSM 850, EGSM, DCS, PCS) share a single antenna, wherein switching elements such as receive filters and diodes are combined in various ways to perform the high-performance band switch with the minimum number of switching elements. The circuit of this antenna duplexer can realize not only the size reduction of the multiband switch antenna duplexer but also the size reduction and performance improvement of the wireless terminal itself.

Abstract: A semiconductor device includes an insulating film formed over a semiconductor substrate, a Zener diode formed above the insulating film, an interlayer film formed above the Zener diode, and a gate aluminum and a source aluminum formed above the interlayer film. The Zener diode is connected between the gate aluminum and the source aluminum. The Zener diode is formed by alternately joining an N type region and a P type region concentrically. The gate electrode includes a gate pad section. A planar shape of the Zener diode is substantially similar to a planer shape of the gate pad section. The gate pad section extends for a predetermined distance from an outermost edge of the P type region of the Zener diode to outside.

Abstract: A power MOSFET of the invention includes a cell region in which a plurality of cells constituted of a transistor having a gate electrode formed in a trench is aligned, the plurality of cells being arranged to form a square grid and a gate interconnect lead formed so as to extend out of the cell region, with an end portion overlapping an outermost peripheral gate electrode in the cell region for connection.

Abstract: A technology which can realize a high-performance multiband operation in a compact circuit configuration and is advantageous for a wireless terminal of GSM system for which the further increase of the demands is expected in the future is provided. Provided is a multiband switch type antenna duplexer adopted in a mobile phone used in TDMA system such as the GSM system, in which the signals of respectively different first to fourth frequency bands (GSM 850, EGSM, DCS, PCS) share a single antenna, wherein switching elements such as receive filters and diodes are combined in various ways to perform the high-performance band switch with the minimum number of switching elements. The circuit of this antenna duplexer can realize not only the size reduction of the multiband switch antenna duplexer but also the size reduction and performance improvement of the wireless terminal itself.

Abstract: A technology which can realize a high-performance multiband operation in a compact circuit configuration and is advantageous for a wireless terminal of GSM system for which the further increase of the demands is expected in the future is provided. Provided is a multiband switch type antenna duplexer adopted in a mobile phone used in TDMA system such as the GSM system, in which the signals of respectively different first to fourth frequency bands (GSM 850, EGSM, DCS, PCS) share a single antenna, wherein switching elements such as receive filters and diodes are combined in various ways to perform the high-performance band switch with the minimum number of switching elements. The circuit of this antenna duplexer can realize not only the size reduction of the multiband switch antenna duplexer but also the size reduction and performance improvement of the wireless terminal itself.

Abstract: In a semiconductor device including a gate electrode buried in a trench of the device, the trench is constructed by a first opening with a uniform width the same as that of an upper portion of the first opening and a second opening beneath the first opening with a width larger than the uniform width. A bottom of a base region adjacent to the trench is adjacent to the second opening.

Abstract: An antenna duplexer is reduced in size, so that a dual-band/triple-band mobile radio terminal small in size and light in weight is realized. An off-set PLL modulation system is adopted, and a transmitting system of the antenna duplexer is constituted by switches. Further, in mounting an SAW filter, a multi-layer substrate is adopted, matching circuits and so on are formed by lumped-constant circuit elements, and the SAW filter is received in a space provided on the multi-layer substrate.

Abstract: A radio frequency filter that can be miniaturized is provided. The radio frequency filter has a ladder-type resonator filter, a first terminal, a second terminal, a serial capacitance, a parallel capacitance, a serial inductance, and a parallel inductance. In the ladder-type resonator filter, a plurality of first surface acoustic wave resonators or first film bulk acoustic resonators are connected in a ladder circuit configuration. The serial inductance and the parallel capacitance are connected between the ladder-type resonator filter and the first terminal. The serial capacitance and the parallel inductance are connected between the ladder-type resonator filter and the second terminal.

Abstract: A radio frequency filter that can be miniaturized is provided. The radio frequency filter has a ladder-type resonator filter, a first terminal, a second terminal, a serial capacitance, a parallel capacitance, a serial inductance, and a parallel inductance. In the ladder-type resonator filter, a plurality of first surface acoustic wave resonators or first film bulk acoustic resonators are connected in a ladder circuit configuration. The serial inductance and the parallel capacitance are connected between the ladder-type resonator filter and the first terminal. The serial capacitance and the parallel inductance are connected between the ladder-type resonator filter and the second terminal.

Abstract: An initial layer of an epitaxial layer is formed on an n+ type semiconductor substrate in which a crystal plane of a substrate surface is (100) plane and a crystal plane of its orientation flat is {100} plane. Then, a silicon oxide film having a film thickness of 400 to 600 Å is formed on a surface of the initial layer by thermal oxidization, and a silicon nitride film which functions as a mask for preventing the growth of oxide film and has a film thickness of 600 to 1000 Å is allowed to grow on the silicon oxide film by CVD process and then, is selectively dry etched to form an n− type epitaxial layer in which an initial groove is formed. Next, an inner surface of the groove is thermally oxidized at the oxidization temperature of 1100 to 1200° C. using the nitride film as a mask, and if an LOCOS oxide film having a film thickness of 0.6 to 0.8 &mgr;m is formed, the initial groove becomes a U-shaped groove.

Abstract: A structurally-simple and inexpensive vehicle occupant crash protector is provided which can be miniaturized in its entirety and cope with an impact which occurs at the side of a vehicle. A folded air bag is disposed in the vicinity of a window of a vehicle. An end of the air bag in the direction in which said bag expands and moves, is pulled out by a wire retracted to a tensile device so that the air bag is expanded and a state of expansion of the air bag is held. Thus, the tensile device rapidly expands the air bag and helps the inflation thereof. Further, the end of the expanded and inflated air bag is supported by the wire retracted to the tensile device so that the expanded state of the air bag is properly held.

Abstract: An air bag apparatus provided at a seat back for a vehicle body has an inflator which has a substantially cylindrical configuration. The inflator is accommodated within a bag body which is expanded due to the gas ejected from the inflator. The inflator is disposed at the seat back such that the longitudinal direction of the inflator is directed along the height direction of the seat back. Accordingly, the air bag apparatus can be made compact in the thickness direction of the seat back.

Abstract: A steering wheel pad structure in which an energy absorbing member is mounted to a steering wheel separately and independently of a pad so that the energy absorbing member is prevented from moving in accordance with movement of the pad when the pad is pressed in order to operate a horn switch. When the pad is pressed, a small pressing force suffices, and operation of the horn switch can be effected smoothly.