Abstract: An aspect according to the present invention provides an acrylic resin including a first structural unit represented by formula (1) and a second structural unit represented by formula (2): [in the formula (1), R1 represents a hydrogen atom or a methyl group, and R2 represents an alkyl group having 12-30 carbon atoms] [in the formula (2), R3 and R5 each independently represent a hydrogen atom or a methyl group, and R4 represents a divalent organic group].

Abstract: The present invention relates to a phosphate adsorbing agent for blood processing comprising a porous formed article comprising an organic polymer resin and an inorganic ion adsorbent and having the most frequent pore size of 0.08 to 0.70 ?m measured with a mercury porosimeter. The present invention also relates to a blood processing system and a blood processing method involving the phosphate adsorbing agent for blood processing.

Abstract: The present invention provides a method for obtaining high purity chlorosilanes from chlorosilanes containing boron impurities and phosphorus impurities. On the basis of the finding that solid by-product formation in the purification of chlorosilanes by adding an aromatic aldehyde results from a catalytic reaction by iron ions or rust-like iron, a Lewis base having a masking effect is added to chlorosilanes. Examples of the Lewis base include a divalent sulfur-containing compound and an alkoxysilane. The divalent sulfur-containing compound is preferably a compound represented by the formula: R—S—R? (wherein R is a hydrocarbon group or a carbonyl group; and the sum of the carbon atoms in R and R? is 7 or more), and the alkoxysilane is preferably a compound represented by the formula: RxSi(OR?)4-x (wherein R and R? are each an alkyl group having 1 to 20 carbon atoms).

Abstract: The present invention provides a method for obtaining high purity chlorosilanes from chlorosilanes containing boron impurities and phosphorus impurities. On the basis of the finding that solid by-product formation in the purification of chlorosilanes by adding an aromatic aldehyde results from a catalytic reaction by iron ions or rust-like iron, a Lewis base having a masking effect is added to chlorosilanes. Examples of the Lewis base include a divalent sulfur-containing compound and an alkoxysilane. The divalent sulfur-containing compound is preferably a compound represented by the formula: R—S—R? (wherein R is a hydrocarbon group or a carbonyl group; and the sum of the carbon atoms in R and R? is 7 or more), and the alkoxysilane is preferably a compound represented by the formula: RxSi(OR?)4-x (wherein R and R? are each an alkyl group having 1 to 20 carbon atoms).

Abstract: A method for producing a silicon single crystal by the Czochralski method with carbon-doping comprising: charging a polycrystalline silicon material and any one of a carbon dopant selected from the group consisting of an organic compound, an organic compound and a silicon wafer, carbon powder and a silicon wafer, an organic compound and carbon powder, and an organic compound and carbon powder and a silicon wafer into a crucible and melting the polycrystalline silicon material and the carbon dopant; and then growing a silicon single crystal from the melt of the polycrystalline silicon material and the carbon dopant. And a carbon-doped silicon single crystal produced by the method. Thereby, there is provided a method for producing a silicon single crystal with carbon-doping in which the crystal can be doped with carbon easily at low cost, and carbon concentration in the crystal can be controlled precisely.

Abstract: A method for producing a silicon single crystal by the Czochralski method with carbon-doping comprising: charging a polycrystalline silicon material and any one of a carbon dopant selected from the group consisting of an organic compound, an organic compound and a silicon wafer, carbon powder and a silicon wafer, an organic compound and carbon powder, and an organic compound and carbon powder and a silicon wafer into a crucible and melting the polycrystalline silicon material and the carbon dopant; and then growing a silicon single crystal from the melt of the polycrystalline silicon material and the carbon dopant. And a carbon-doped silicon single crystal produced by the method. Thereby, there is provided a method for producing a silicon single crystal with carbon-doping in which the crystal can be doped with carbon easily at low cost, and carbon concentration in the crystal can be controlled precisely.

Abstract: In a pulling apparatus operated according to the multi-pulling method or CCZ method, granular silicon material is first fed to a feed pipe from a feeder so as to form stagnation of the granular silicon material in the feed pipe. The feeding of the granular silicon material from the feeder to the feed pipe is repeatedly commenced and stopped so as to maintain the stagnation of the granular silicon material. The feed rate of the granular silicon material from the feeder to the feed pipe is increased with time until the feed of the silicon material is completed. This prevents abrasion of a coating or lining provided on the inner surface of the feeder and also prevents damage of the feeder.

Abstract: A silicon monocrystal is manufactured according to the continuously charged Czochralski method in which a double crucible is used which includes an outer crucible and an inner crucible which communicate with each other through pores. A dopant is charged to the silicon melt stored in the double crucible before commencing pulling of a silicon monocrystal such that the ratio of the dopant concentration of the silicon melt stored in the outer crucible to the dopant concentration of the silicon melt stored in the inner crucible becomes greater than an effective segregation coefficient of the dopant. The silicon monocrystal is then pulled while silicon material is charged to the silicon melt within the outer crucible, during which the dopant concentration ratio becomes equal to the effective segregation coefficient and then becomes smaller than the effective segregation coefficient.

Abstract: A feeding reservoir 11 for intermittently or continuously feeding granular raw material into a pulling apparatus 1, a chamber 13 connected to the feeding reservoir 11 through a gate valve 12, a granular raw material supply section 15 by which the granular raw material is supplied to the chamber 13 through a gate valve 14 and a pressure adjustment means 20 which adjusts the inner pressure of the chamber 13 is provided, and the granular raw material is fed to the feeding reservoir 11 while maintaining the inner pressure of the feeding reservoir 11 as the same as the inner pressure of the single crystal pulling apparatus 1. This feeding method and structure makes it possible to feed an additional amount of granular raw material even during the continuous charging process and or the recharging process without interrupting the process and also to pull a heavy single crystal rod with a large diameter without increasing the capacity of the feeding reservoir.

Abstract: A recharger system including a feeder and a feed conduit recharge polycrystalline silicon granules into a crucible after a run or operation of growing a single crystal silicon rod by the Czochralski method, thereby to prepare for a next run of crystal growing. The amount of holdup or backed-up supply of the silicon granules in the feed conduit is detected by a sensor provided on the feed conduit. A smooth and high-rate feed of the silicon granules is ensured by controlling the feed rate of the silicon granules from the feeder to the feed conduit and/or a descending velocity of the crucible by signals generated in the sensor as a function of the amount of the holdup or backed-up supply in the feed conduit.

Abstract: In a method of manufacturing a silicon monocrystal using the Czochralski method, a seed crystal is brought into contact with silicon melt and is then pulled such that after a neck portion is formed, a silicon monocrystal is grown below the neck portion. The crystal has a hollow portion which has an opening in a contact surface of the seed crystal to be brought into contact with the silicon melt. Alternatively, the seed crystal has a hollow portion which will have an opening in the contact surface of the seed crystal when the contact surface is brought into contact with the silicon melt. Use of such seed crystals makes it possible to increase the strength of the neck portion and to pull a heavy and long silicon monocrystal having a large diameter.

Abstract: In a method of manufacturing a silicon monocrystal using a continuous Czochralski method, a silicon monocrystal is pulled from a silicon melt in a crucible while a silicon material is fed to the crucible. Supply of the silicon material is suspended until the temperature distribution of the silicon melt becomes stable after initiation of a straight body forming process, and the supply of the silicon material is commenced when the temperature distribution of the silicon melt has become stable. The feed rate of the silicon material is gradually increased until the feed rate becomes equal to a solidification rate of the silicon melt after the supply of the silicon material has been commenced. This method prevents the silicon monocrystal from becoming a polycrystal during the manufacture thereof.

Abstract: A recharger system including a feeder and a feed conduit recharge polycrystalline silicon granules into a crucible after a run or operation of growing a single crystal silicon rod by the Czochralski method, thereby to prepare for a next run of crystal growing. The amount of holdup or backed-up supply of the silicon granules in the feed conduit is detected by a sensor provided on the feed conduit. A smooth and high-rate feed of the silicon granules is ensured by controlling the feed rate of the silicon granules from the feeder to the feed conduit and/or a descending velocity of the crucible by signals generated in the sensor as a function of the amount of the holdup or backed-up supply in the feed conduit.