Abstract: Provided is a substrate for mounting an LED element in which a stable light-emitting surface is obtained, as well as a light source and an LED display using this substrate, so that the axis at which light is emitted by a chip LED does not vary. The substrate for mounting an LED element (1) comprises a substrate (1a) on which an LED element can be mounted, and a wiring layer (2) for supplying electricity to an LED element (7). The wiring layer (2) for supplying electricity to the LED element (7) is formed on a mirror-finished surface on the entirety of a substrate surface on which the LED element is mounted, except for an insulating space 4 capable of providing insulation between terminals of the LED element.

Abstract: Provided is a substrate for mounting an LED element in which a stable light-emitting surface is obtained, as well as a light source and an LED display using this substrate, so that the axis at which light is emitted by a chip LED does not vary. The substrate for mounting an LED element (1) comprises a substrate (1a) on which an LED element can be mounted, and a wiring layer (2) for supplying electricity to an LED element (7). The wiring layer (2) for supplying electricity to the LED element (7) is formed on a mirror-finished surface on the entirety of a substrate surface on which the LED element is mounted, except for an insulating space 4 capable of providing insulation between terminals of the LED element.

Abstract: An electronic device 1 has a first semiconductor substrate 2 on which a bonding projection section 42 is projected via an insulation film 41, a second semiconductor substrate 3 that is bonded by welding the bonding projection section 42 of the first semiconductor substrate 2 via conductive bonding material, a through hole 54 that is formed to penetrate the bonding projection section 42 and the insulation film 41 in a bonding direction, and a conduction wiring section 44 that is formed by the conductive bonding material filled in the through hole 54 at a time of bonding by welding and conducts the first semiconductor substrate 2 with the second semiconductor substrate 3 to have same electric potential.

Abstract: A method of bonding a semiconductor substrate has a step of pressurizing and heating to bond a substrate 11 with a substrate 12 by eutectic bonding in a state that an aluminum containing layer 31 and a germanium layer 32 between a bonding section 30a of the substrate 11 and a bonding section 30b of the substrate 21 are overlaid and an outer end 32a of the germanium layer 32 is receded inward with respect to an outer end 31a of the aluminum containing layer 31.

Abstract: An electronic device 1 has a first semiconductor substrate 2 on which a bonding projection section 42 is projected via an insulation film 41, a second semiconductor substrate 3 that is bonded by welding the bonding projection section 42 of the first semiconductor substrate 2 via conductive bonding material, a through hole 54 that is formed to penetrate the bonding projection section 42 and the insulation film 41 in a bonding direction, and a conduction wiring section 44 that is formed by the conductive bonding material filled in the through hole 54 at a time of bonding by welding and conducts the first semiconductor substrate 2 with the second semiconductor substrate 3 to have same electric potential.

Abstract: A method of bonding a semiconductor substrate having a substrate 11 formed with a MEMS sensor and a substrate 21 having a bonding portion 30b film-formed by contacting an aluminum containing layer 31 with a germanium layer 32 on either a front surface or a rear surface and formed with an integrated circuit that controls the MEMS sensor, either a front surface or a rear surface of the substrate 11 is put to contact directly on the bonding portion of the substrate 21 to bond by eutectic bonding with pressurization and heating.

Abstract: Disclosed is a method for bonding semiconductor substrates, wherein an eutectic alloy does run off the bonding surfaces during the eutectic bonding. Also disclosed is an MEMS device which is obtained by bonding semiconductor substrates by this method. Specifically, a substrate (11) and a substrate (21) are eutectically bonded with each other by pressing and heating the substrate (11) and the substrate (21), while interposing an aluminum-containing layer (31) and a germanium layer (32) between a bonding part (30a) of the substrate (11) and a bonding part (30b) of the substrate (21) in such a manner that the aluminum-containing layer (31) and the germanium layer (32) overlap each other, with an outer edge (32a) of the germanium layer (32) being inwardly set back from the an outer edge (31a) of the aluminum-containing layer (31).

Abstract: A method of bonding a semiconductor substrate in which a first semiconductor substrate is bonded with a second semiconductor substrate by eutectic bonding with pressurization and heating, an aluminum containing layer primarily made of aluminum and a germanium layer in a polymer state being interposed between a bonding surface of the first semiconductor substrate and a bonding surface of the second semiconductor substrate, the method including a step of: setting a weight ratio of the germanium layer to an aluminum containing layer to be eutectic alloyed is between 27 wt % to 52 wt %.

Abstract: A light-emitting element (1) includes a light-emitting layer (2) including a phosphor, and at least two electrodes (6, 7). The light-emitting element (1) includes at least two kinds of electrically insulating layers (2, 9) with different dielectric constants. One of the electrically insulating layers (2, 9) is the light-emitting layer (2), and one of the two electrodes (6, 7) is formed in contact with one of the insulating layers. Therefore, it is possible to provide a light-emitting element that can emit light by using surface discharge, is manufactured at low cost, exhibits favorable luminous efficiency, and is to be driven with low power consumption when being applied to a large-screen display.

Abstract: A method and an apparatus which continuously separate and measure mercury in an exhaust gas in accordance with each chemical conformation and display a measurement result in real time. According to the method and the apparatus, water-soluble mercury in a gas is absorbed into an absorption solution (7), the gas and the absorption solution (7) are then separated from each other, the water-soluble mercury in the absorption solution (7) is reduced to be converted into gaseous metal mercury and led to an analyzer (20), and metal mercury in the gas which is not absorbed into the absorption solution (7) is led to an analyzer (22) in the form of gas. As a result, the water-soluble mercury and the non-water-soluble mercury contained in the gas can be captured and measured/analyzed in respective measurement systems in accordance with each chemical conformation. In addition, a concentration of the metal mercury and that of the water-soluble mercury in the gas can be continuously monitored in real time.

Abstract: To provide a method of and an apparatus for continuously measuring elemental mercury and bivalent mercury both contained in a gaseous medium fractionally with a simplified structure, the concentration of a total mercury (Metallic Mercury+Bivalent Mercury) and the concentration of elemental mercury contained in gases are measured continuously and fractionally. In the practice of this mercury measuring method, a first column 1, filled with a first fixed catalyst, and a second column 11, filled with a second fixed catalyst, are fluid connected in parallel relation to each other. The gases G are introduced into those first and second columns 1 and 11. In the first column 1, the first fixed catalyst collects and removes the bivalent mercury, but passes only the elemental mercury in the gases through the first column.

Abstract: In a DC—DC converter, a regulator circuit 14 acts to drive a switching element Q1 based on an error between a detected voltage obtained by a voltage divider circuit 11 and a reference voltage from a reference voltage generating circuit 12 and to output a step-up voltage by a coil L1 to an output terminal Vout. A timing generating circuit 16 acquires a driving interval of the switching element Q1 set by the regulator circuit 14 and then decides that, if the interval is long, a load is in a light load state. In this case, the timing generating circuit 16 controls to supply a driving power to an output voltage controller intermittently by driving switching unit S1, S2.

Abstract: A method and an apparatus which continuously separate and measure mercury in an exhaust gas in accordance with each chemical conformation and display a measurement result in real time. According to the method and the apparatus, water-soluble mercury in a gas is absorbed into an absorption solution (7), the gas and the absorption solution (7) are then separated from each other, the water-soluble mercury in the absorption solution (7) is reduced to be converted into gaseous metal mercury and led to an analyzer (20), and metal mercury in the gas which is not absorbed into the absorption solution (7) is led to an analyzer (22) in the form of gas. As a result, the water-soluble mercury and the non-water-soluble mercury contained in the gas can be captured and measured/analyzed in respective measurement systems in accordance with each chemical conformation. In addition, a concentration of the metal mercury and that of the water-soluble mercury in the gas can be continuously monitored in real time.

Abstract: In a DC-DC converter, a regulator circuit 14 acts to drive a switching element Q1 based on an error between a detected voltage obtained by a voltage divider circuit 11 and a reference voltage from a reference voltage generating circuit 12 and to output a step-up voltage by a coil L1 to an output terminal Vout. A timing generating circuit 16 acquires a driving interval of the switching element Q1 set by the regulator circuit 14 and then decides that, if the interval is long, a load is in a light load state. In this case, the timing generating circuit 16 controls to supply a driving power to an output voltage controller intermittently by driving switching unit S1, S2.

Abstract: A method to manufacture acryloxypropylsilane to a high degree of purity is achieved by hydrosilation of (A) allyl acrylate or allyl methacrylate by (B) a hydrosilane compound, using (C) a platinum-containing compound as the catalyst and (D) an organic phosphorus compound as the promoter. The acryloxypropylsilane product is expressed by General Formula ICH.sub.2 .dbd.CR.sup.1 COOCH.sub.2 CH.sub.2 CH.sub.2 SiR.sup.2.sub.n R.sup.3.sub.3-n (Formula I)where R.sup.1 represents a hydrogen or methyl group, R.sup.2 represents a hydrolyzable group, R.sup.3 represents an aryl, alkenyl or aryl group of carbon number 1-12, and n is 0, 1, 2, or 3.

Abstract: A welding fixture for holding a plurality of long component members that are welded along their lengths into an elongate product, having at least three stationary clamps disposed in spaced-apart relation with each other along the long component members, and at least three movable clamps disposed opposite to the stationary clamps, respectively, and cooperating the stationary clamps to clamp the component members in opposite clamping directions toward each other substantially perpendicular to the longitudinal direction of the component members. The fixture includes a pivot base disposed pivotally in a plane parallel to the clamping directions, and supporting at least one of the stationary clamps. The pivot base is supported by a supporting device pivotally about a pivot axis which is located on the component members clamped by the movable and stationary clamps.