Abstract: A simulation system includes a control device for controlling a control object; and an information processing device configured to exchange data with the control device. The control device includes a computation unit configured to execute sequence control and motion control of the control object; and an output unit configured to output a fixed interval of data related to the sequence control and the motion control of the object.

Abstract: A simulation system includes a control device for controlling a control object; and an information processing device configured to exchange data with the control device. The control device includes a computation unit configured to execute sequence control and motion control of the control object; and an output unit configured to output a fixed interval of data related to the sequence control and the motion control of the object.

Abstract: It is intended to provide a preparation for percutaneous administration of 2-(4-ethyl-1-piperazinyl)-4-(4-fluoro-phenyl)-5,6,7,8,9,10-hexahydrocycloocta[b]pyridine (Compound A), which inhibits the generation of a metabolite and is capable of continuously maintaining a blood drug level. Specifically, a tape preparation comprising an adhesive layer formed on one surface of a support, characterized in that the adhesive layer contains (1) Compound A or a physiologically acceptable acid addition salt thereof, and (2) an acrylic adhesive, or (1) Compound A or a physiologically acceptable acid addition salt thereof, (2) an acrylic adhesive, and (3) a permeation enhancer is provided.

Abstract: There is provided a process for industrial production of simple 3-carboxy-cis,cis-muconic acid and/or 3-carboxymuconolactone from low molecular mixtures derived from plant components such as vanillin, vanillic acid and protocatechuic acid, via a multistage enzyme reaction. A recombinant plasmid containing a vanillate demethylase gene (vanAB genes), benzaldehyde dehydrogenase gene (ligV gene) and protocatechuate 3,4-dioxygenase gene (pcaHG genes); transformants incorporating the plasmid; and a process for production of 3-carboxy-cis,cis-muconic acid and/or 3-carboxymuconolactone characterized by culturing the transformants in the presence of vanillin, vanillic acid, protocatechuic acid or a mixture of two or more thereof.

Abstract: A method of manufacturing a semiconductor device includes forming a first insulating film over a semiconductor substrate, forming a trench in the first insulating film, forming a metal interconnect in the trench, exposing the surface of the metal interconnect to a silicon-containing gas, performing a plasma treatment of the surface of the metal interconnect after exposing to the silicon-containing gas, and forming a second insulating film over the metal interconnect.

Abstract: To provide an industrial purification method of PDC obtained by fermentative production. A method of purifying 2-pyrone-4,6-dicarboxylic acid which comprises including a salt of monovalent to tetravalent cations in a fermentation liquid containing microbially-produced 2-pyrone-4,6-dicarboxylic acid; and a method of purifying 2-pyrone-4,6-dicarboxylic acid which method comprises extracting 2-pyrone-4,6-dicarboxylic acid from a fermentation liquid containing microbially-produced 2-pyrone-4,6-dicarboxylic acid without forming 2-pyrone-4,6-dicarboxylate.

Abstract: There is provided a process for industrial production of simple 3-carboxy-cis,cis-muconic acid and/or 3-carboxymuconolactone from low molecular mixtures derived from plant components such as vanillin, vanillic acid and protocatechuic acid, via a multistage enzyme reaction. A recombinant plasmid containing a vanillate demethylase gene (vanAB genes), benzaldehyde dehydrogenase gene (ligV gene) and protocatechuate 3,4-dioxygenase gene (pcaHG genes); transformants incorporating the plasmid; and a process for production of 3-carboxy-cis,cis-muconic acid and/or 3-carboxymuconolactone characterized by culturing the transformants in the presence of vanillin, vanillic acid, protocatechuic acid or a mixture of two or more thereof.

Abstract: A polyester containing a biomass-derived material in a repeating unit structure and having all of sufficient mechanical strength, easy mold processability into a molded product such as fiber or film, and biodegradability, is provided. A PDC-L-lactic acid copolyester represented by the following formula: —[R1—PDC]x—[OCH(CH3)CO]1-x—??(I) [wherein PDC is a dicarboxylic acid residue represented by the following formula (II): R1 is selected from —O(CH2)nO—, —O(CH2CH2O)m— and —O[CH(CH3)CH2O]m—, where n represents an integer of 3 to 6 and m represents an integer of 1 to 4; and is 0.005?x?0.2 when n?4 or m?2, and is 0.005?x?0.4 in other cases]; and a molded product containing the PDC-L-lactic acid copolyester.

Abstract: A method for forming a silicon-containing insulation film on a substrate by plasma polymerization includes: introducing a reaction gas comprising (i) a source gas comprising a silicon-containing hydrocarbon cyclic compound containing at least one vinyl group (Si-vinyl compound), and (ii) an additive gas, into a reaction chamber where a substrate is placed; and applying radio-frequency power to the gas to cause plasma polymerization, thereby depositing an insulation film on the substrate.

Abstract: It is intended to provide a preparation for percutaneous administration of 2-(4-ethyl-1-piperazinyl)-4-(4-fluoro-phenyl)-5,6,7,8,9,10-hexahydrocycloocta[b]pyridine (Compound A), which inhibits the generation of a metabolite and is capable of continuously maintaining a blood drug level. Specifically, a tape preparation comprising an adhesive layer formed on one surface of a support, characterized in that the adhesive layer contains (1) Compound A or a physiologically acceptable acid addition salt thereof, and (2) an acrylic adhesive, or (1) Compound A or a physiologically acceptable acid addition salt thereof, (2) an acrylic adhesive, and (3) a permeation enhancer is provided.

Abstract: A method of manufacturing a semiconductor device includes forming a first insulating film over a semiconductor substrate, forming a trench in the first insulating film, forming a metal interconnect in the trench, exposing the surface of the metal interconnect to a silicon-containing gas, performing a plasma treatment of the surface of the metal interconnect after exposing to the silicon-containing gas, and forming a second insulating film over the metal interconnect.

Abstract: A multilayer interconnection structure is formed by a method comprising the steps of: Forming a low dielectric constant film on a substrate, curing the low dielectric constant film by irradiating it with UV light, laminating a UV blocking film, laminating a next low dielectric constant film, and curing the next low dielectric constant film by irradiating it with UV light.

Abstract: A semiconductor device manufacturing method that includes depositing a first insulating film on a semiconductor substrate, etching a part of the first insulating film, and performing UV irradiation to the first insulating film.

Abstract: A pharmaceutical composition for transdermal administration comprising perospirone of the formula (1): or a pharmaceutically acceptable acid addition salt thereof, which can inhibit the generation of metabolites and continuously maintain the blood level of perospirone.

Abstract: A method for forming a silicon-containing insulation film on a substrate by plasma polymerization includes: introducing a reaction gas comprising (i) a source gas comprising a silicon-containing hydrocarbon cyclic compound containing at least one vinyl group (Si-vinyl compound), and (ii) an additive gas, into a reaction chamber where a substrate is placed; and applying radio-frequency power to the gas to cause plasma polymerization, thereby depositing an insulation film on the substrate.

Abstract: A method for forming a silicon-containing insulation film on a substrate by plasma polymerization includes: introducing a reaction gas comprising (i) a source gas consisting of a silicon-containing hydrocarbon linear compound containing at least one vinyl group (Si-vinyl compound), and (ii) an additive gas, into a reaction chamber where a substrate is placed; and applying radio-frequency power to the gas to cause plasma polymerization, thereby depositing an insulation film on the substrate.

Abstract: A method of treating a low-dielectric constant film includes: depositing a low-dielectric constant film on a substrate, which is structured by Si—C bond and has a first leakage current; and emitting ultraviolet (UV) light to the film until the film has a second leakage current which is ½ or less of the first leakage current.

Abstract: A silicon-containing insulation film is formed on a substrate by plasma polymerization by introducing a reaction gas comprising (i) a source gas comprising a silicon-containing hydrocarbon compound containing at least one vinyl group (Si-vinyl compound), and (ii) an additive gas, into a reaction chamber where a substrate is placed; and applying radio-frequency power to the gas to cause plasma polymerization, thereby depositing an insulation film on the substrate.

Abstract: An apparatus for treating a semiconductor substrate includes a chamber an internal pressure of which can be controlled from a vacuum to the vicinity of an atmospheric pressure, multiple ultraviolet light emitters provided inside the chamber, a heater provided facing and parallel to the emitters inside the chamber, and a filter being disposed between the emitters and the heater and used for uniformizing the intensity of illumination of ultraviolet light; and further includes a configuration for uniformly distributing the intensity of illumination of ultraviolet light emitted from the emitters onto a surface of the heater.

Abstract: A multilayer interconnection structure is formed by a method comprising the steps of: Forming a low dielectric constant film on a substrate, curing the low dielectric constant film by irradiating it with UV light, laminating a UV blocking film, laminating a next low dielectric constant film, and curing the next low dielectric constant film by irradiating it with UV light.