Patents by Inventor Naoki Ooi
Naoki Ooi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10662833Abstract: An oil cooler includes flat tubes layered together with a clearance, wherein cooling water flows through the clearance. Each flat tube includes a first plate, a second plate, and a fin plate held between the first plate and the second plate. The first plate is recessed to form a fin plate accommodation portion accommodating the fin plate, wherein a thin portion is formed outside of the fin plate accommodation portion in a longitudinal direction of the flat tube. An oil port is provided at the thin portion. Each flat tube includes a guide wall at a lateral periphery thereof, wherein the guide wall faces the oil port in a width direction, and projects in a layering direction. The guide wall, the thin portion, and a lateral wall of the oil port form a nozzle portion to guide cooling water in the longitudinal direction.Type: GrantFiled: November 25, 2014Date of Patent: May 26, 2020Assignee: MAHLE FILTER SYSTEMS JAPAN CORPORATIONInventors: Naoki Ooi, Hirokazu Watanabe
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Patent number: 10641555Abstract: A heat exchanger for a vehicle is mounted in a vehicle having a power train through which an engine coolant, an engine oil and a transmission oil flow and in which a flow rate of the engine oil and a flow rate of the transmission oil are different from each other. A first flow passage for causing the engine coolant to flow, a second flow passage for causing the engine oil to flow, and a third flow passage for causing the transmission oil to flow are formed through lamination of a plurality of plates. The heat exchanger includes a region where the first flow passage is adjacent only to that one of the second flow passage and the third flow passage through which a fluid flows at lower flow rate.Type: GrantFiled: August 25, 2017Date of Patent: May 5, 2020Assignees: TOYOTA JIDOSHA KABUSHIKI KAISHA, MAHLE Filter Systems Japan CorporationInventors: Daisuke Tokozakura, Takahiro Shiina, Satoshi Tominaga, Naoki Ooi, Katsuhiro Isoda
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Publication number: 20180058766Abstract: A heat exchanger for a vehicle is mounted in a vehicle having a power train through which an engine coolant, an engine oil and a transmission oil flow and in which a flow rate of the engine oil and a flow rate of the transmission oil are different from each other. A first flow passage for causing the engine coolant to flow, a second flow passage for causing the engine oil to flow, and a third flow passage for causing the transmission oil to flow are formed through lamination of a plurality of plates. The heat exchanger includes a region where the first flow passage is adjacent only to that one of the second flow passage and the third flow passage through which a fluid flows at lower flow rate.Type: ApplicationFiled: August 25, 2017Publication date: March 1, 2018Applicants: TOYOTA JIDOSHA KABUSHIKI KAISHA, MAHLE Filter Systems Japan CorporationInventors: Daisuke TOKOZAKURA, Takahiro Shiina, Satoshi Tominaga, Naoki Ooi, Katsuhiro Isoda
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Publication number: 20170152609Abstract: A method of manufacturing a silicon carbide substrate has the following steps. A silicon carbide source material is partially sublimated. After partially sublimating the silicon carbide source material, a seed substrate having a main surface is placed in a growth container. By sublimating the remainder of the silicon carbide source material in the growth container, a silicon carbide crystal grows on the main surface of the seed substrate. In this way, an increase of dislocations in the main surface of the seed substrate can be suppressed, thereby providing a method of manufacturing a silicon carbide substrate having few dislocations.Type: ApplicationFiled: February 14, 2017Publication date: June 1, 2017Inventors: Shinsuke FUJIWARA, Taro NISHIGUCHI, Tsutomu HORI, Naoki OOI, Shunsaku UETA
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Patent number: 9631296Abstract: A method of manufacturing a silicon carbide substrate has the following steps. A silicon carbide source material is partially sublimated. After partially sublimating the silicon carbide source material, a seed substrate having a main surface is placed in a growth container. By sublimating the remainder of the silicon carbide source material in the growth container, a silicon carbide crystal grows on the main surface of the seed substrate. In this way, an increase of dislocations in the main surface of the seed substrate can be suppressed, thereby providing a method of manufacturing a silicon carbide substrate having few dislocations.Type: GrantFiled: June 11, 2013Date of Patent: April 25, 2017Assignee: Sumitomo Electric Industries, Ltd.Inventors: Shinsuke Fujiwara, Taro Nishiguchi, Tsutomu Hori, Naoki Ooi, Shunsaku Ueta
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Publication number: 20150225873Abstract: A method of manufacturing a silicon carbide substrate has the following steps. A silicon carbide source material is partially sublimated. After partially sublimating the silicon carbide source material, a seed substrate having a main surface is placed in a growth container. By sublimating the remainder of the silicon carbide source material in the growth container, a silicon carbide crystal grows on the main surface of the seed substrate. In this way, an increase of dislocations in the main surface of the seed substrate can be suppressed, thereby providing a method of manufacturing a silicon carbide substrate having few dislocations.Type: ApplicationFiled: June 11, 2013Publication date: August 13, 2015Applicant: SUMITOMO ELECTRIC INDUSTRIES, LTD.Inventors: Shinsuke FUJIWARA, Taro NISHIGUCHI, Tsutomu HORI, Naoki OOI, Shunsaku UETA
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Patent number: 9082683Abstract: A first impurity region is formed by ion implantation through a first opening formed in a mask layer. By depositing a spacer layer on an etching stop layer on which the mask layer has been provided, a mask portion having the mask layer and the spacer layer is formed. By anisotropically etching the spacer layer, a second opening surrounded by a second sidewall is formed in the mask portion. A second impurity region is formed by ion implantation through the second opening. An angle of the second sidewall with respect to a surface is 90°±10° across a height as great as a second depth. Thus, accuracy in extension of an impurity region can be enhanced.Type: GrantFiled: January 3, 2014Date of Patent: July 14, 2015Assignee: Sumitomo Electric Industries, Ltd.Inventors: Naoki Ooi, Hiromu Shiomi
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Publication number: 20150144312Abstract: An oil cooler includes flat tubes layered together with a clearance, wherein cooling water flows through the clearance. Each flat tube includes a first plate, a second plate, and a fin plate held between the first plate and the second plate. The first plate is recessed to form a fin plate accommodation portion accommodating the fin plate, wherein a thin portion is formed outside of the fin plate accommodation portion in a longitudinal direction of the flat tube. An oil port is provided at the thin portion. Each flat tube includes a guide wall at a lateral periphery thereof, wherein the guide wall faces the oil port in a width direction, and projects in a layering direction. The guide wall, the thin portion, and a lateral wall of the oil port form a nozzle portion to guide cooling water in the longitudinal direction.Type: ApplicationFiled: November 25, 2014Publication date: May 28, 2015Applicant: MAHLE FILTER SYSTEMS JAPAN CORPORATIONInventors: Naoki OOI, Hirokazu Watanabe
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Patent number: 8759187Abstract: A first impurity region is formed by ion implantation through a first opening formed in a mask layer. By depositing a spacer layer on an etching stop layer on which the mask layer has been provided, a mask portion having the mask layer and the spacer layer is formed. By anisotropically etching the spacer layer, a second opening surrounded by a second sidewall is formed in the mask portion. A second impurity region is formed by ion implantation through the second opening. An angle of the second sidewall with respect to a surface is 90°±10° across a height as great as a second depth. Thus, accuracy in extension of an impurity region can be enhanced.Type: GrantFiled: January 3, 2014Date of Patent: June 24, 2014Assignee: Sumitomo Electric Industries, Ltd.Inventors: Naoki Ooi, Hiromu Shiomi
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Publication number: 20140120682Abstract: A first impurity region is formed by ion implantation through a first opening formed in a mask layer. By depositing a spacer layer on an etching stop layer on which the mask layer has been provided, a mask portion having the mask layer and the spacer layer is formed. By anisotropically etching the spacer layer, a second opening surrounded by a second sidewall is formed in the mask portion. A second impurity region is formed by ion implantation through the second opening. An angle of the second sidewall with respect to a surface is 90°±10° across a height as great as a second depth. Thus, accuracy in extension of an impurity region can be enhanced.Type: ApplicationFiled: January 3, 2014Publication date: May 1, 2014Applicant: Sumitomo Electric Industries, Ltd.Inventors: Naoki Ooi, Hiromu Shiomi
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Patent number: 8652954Abstract: A method for manufacturing a silicon carbide semiconductor device includes the step of forming a mask pattern of a silicon oxide film by removing a portion of the silicon oxide film by means of etching employing a gas containing oxygen gas and at least one fluorine compound gas selected from a group consisting of CF4, C2F6, C3F8, and SF6.Type: GrantFiled: January 17, 2012Date of Patent: February 18, 2014Assignee: Sumitomo Electric Industries, Ltd.Inventors: Naoki Ooi, Hiromu Shiomi
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Patent number: 8642436Abstract: A first impurity region is formed by ion implantation through a first opening formed in a mask layer. By depositing a spacer layer on an etching stop layer on which the mask layer has been provided, a mask portion having the mask layer and the spacer layer is formed. By anisotropically etching the spacer layer, a second opening surrounded by a second sidewall is formed in the mask portion. A second impurity region is formed by ion implantation through the second opening. An angle of the second sidewall with respect to a surface is 90°±10° across a height as great as a second depth. Thus, accuracy in extension of an impurity region can be enhanced.Type: GrantFiled: December 19, 2011Date of Patent: February 4, 2014Assignee: Sumitomo Electric Industries, Ltd.Inventors: Naoki Ooi, Hiromu Shiomi
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Publication number: 20130061801Abstract: Provided is a method for manufacturing a silicon carbide crystal, including the steps of: placing a seed substrate and a source material for the silicon carbide crystal within a growth container; and growing the silicon carbide crystal with a diameter of more than 4 inches on a surface of the seed substrate by a sublimation method, in the step of growing, a pressure within the growth container being changed from a predetermined pressure, at a predetermined change rate.Type: ApplicationFiled: August 3, 2012Publication date: March 14, 2013Applicant: SUMITOMO ELECTRIC INDUSTRIES, LTD.Inventors: Shinsuke FUJIWARA, Shin HARADA, Taro NISHIGUCHI, Hiroki INOUE, Naoki OOI
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Publication number: 20130045593Abstract: A silicon carbide substrate having a surface is prepared. A coating film made of a first material is formed directly on the surface of the silicon carbide substrate. A mask layer made of a second material is formed on the coating film. The first material is higher in adhesiveness with silicon carbide than the second material. A first opening is formed in the mask layer. First impurity ions for providing a first conductivity type are implanted into the silicon carbide substrate by using ion beams passing through the first opening in the mask layer and through the coating film.Type: ApplicationFiled: August 8, 2012Publication date: February 21, 2013Applicant: Sumitomo Electric Industries, Ltd.Inventor: Naoki OOI
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Publication number: 20120184092Abstract: A method for manufacturing a silicon carbide semiconductor device includes the step of forming a mask pattern of a silicon oxide film by removing a portion of the silicon oxide film by means of etching employing a gas containing oxygen gas and at least one fluorine compound gas selected from a group consisting of CF4, C2F6, C3F8, and SF6.Type: ApplicationFiled: January 17, 2012Publication date: July 19, 2012Applicant: Sumitomo Electric Industries, Ltd.Inventors: Naoki OOI, Hiromu Shiomi
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Publication number: 20120164810Abstract: A first impurity region is formed by ion implantation through a first opening formed in a mask layer. By depositing a spacer layer on an etching stop layer on which the mask layer has been provided, a mask portion having the mask layer and the spacer layer is formed. By anisotropically etching the spacer layer, a second opening surrounded by a second sidewall is formed in the mask portion. A second impurity region is formed by ion implantation through the second opening. An angle of the second sidewall with respect to a surface is 90°±10° across a height as great as a second depth. Thus, accuracy in extension of an impurity region can be enhanced.Type: ApplicationFiled: December 19, 2011Publication date: June 28, 2012Applicant: Sumitomo Electric Industries, Ltd.Inventors: Naoki Ooi, Hiromu Shiomi