Abstract: The present invention provides a fine silicon powder and the like including fine silicon particles having a microscopically measured particle diameter of 1 ?m or more and an average circularity determined in accordance with Formula (1) of 0.93 or more, in which an average particle diameter based on volume, which is measured by a laser diffraction scattering method, is in a range of 0.8 ?m or more and 8.0 ?m or less, an average particle diameter based on number, which is measured by the laser diffraction scattering method, is in a range of 0.100 ?m or more and 0.150 ?m or less, and a specific surface area, which is measured by a BET method, is in a range of 4.0 m2/g or more and 10 m2/g or less. Circularity=(4×?×projected area of particle)1/2/peripheral length of particle (1).

Abstract: To improve performance. A negative electrode material is a negative electrode material for a battery, and includes carbon, tungsten trioxide, and silicon particles (33) including silicon, and in the silicon particles (33), a ratio of the amount of Si in Si2p derived from elemental silicon to the amount of Si in Si2p derived from SiO2 in a surface layer is 3 or more, on an atomic concentration basis, as measured by X-ray photoelectron spectroscopy.

Abstract: Tungsten trioxide is appropriately disposed on the surface of carbon. A negative-electrode material is a negative-electrode material for a battery and contains amorphous carbon and tungsten trioxide provided on the surface of the amorphous carbon.

Abstract: A negative electrode material is a negative electrode material for a battery, and the material includes carbon, tungsten trioxide formed on the surface of the carbon, and silicon formed on the surface of the carbon.

Abstract: The present invention provides a fine silicon powder and the like including fine silicon particles having a microscopically measured particle diameter of 1 ?m or more and an average circularity determined in accordance with Formula (1) of 0.93 or more, in which an average particle diameter based on volume, which is measured by a laser diffraction scattering method, is in a range of 0.8 ?m or more and 8.0 ?m or less, an average particle diameter based on number, which is measured by the laser diffraction scattering method, is in a range of 0.100 ?m or more and 0.150 ?m or less, and a specific surface area, which is measured by a BET method, is in a range of 4.0 m2/g or more and 10 m2/g or less. Circularity=(4×?×projected area of particle)1/2/peripheral length of particle (1).

Abstract: A device for determining the coefficient of friction of diamond conditioner discs and a method of use thereof.

Abstract: A CMP conditioner having excellent corrosion resistance around abrasive grains includes a grindstone base having, formed on one side, an abrasive grain layer including abrasive grains fixed in a metallic bonding phase treated to form a first protective layer comprising an oxide on the surface of the metallic bonding phase of the abrasive grain layer by the sol-gel method. Subsequently, an aerosol obtained by dispersing fine particles of a brittle material in a gas is jetted and caused to strike on the surface of the first protective layer to form a second protective layer comprising a thick oxide film.

Abstract: To provide a CMP conditioner that prevents dissolution of metals in slurry, without the chipping of the abrasive grains and/or decreasing the cutting performance. The CMP apparatus has a polishing pad that faces and contacts conditioning surface of the conditioner body. On this conditioning surface, abrasive grains are distributed and fixed to form abrasive grain layer, thus forming the CMP conditioner. The conditioner body is made of ceramics, the abrasive grains in the abrasive grain layer are held by binding phase made of low temperature co-fired ceramics.

Abstract: The present invention provides wafer polishing apparatus in which the wafer holding head comprises a diaphragm substantially vertically expanded to the head axis in the head body; a carrier, which is fixed to the diaphragm and provided so as to be able to displace along the head axis direction together with the diaphragm; a retainer fixed to the diaphragm in a concentric relation to the carrier; a pressure adjusting mechanism for controlling the pressure of a fluid chamber formed between the diaphragm and the head body; a plurality of carrier torque mechanisms provided between the head body and the carrier for communicating the torque of the head body to the carrier; a plurality of first sensors, which is provided at individual torque transfer mechanism, for observing the force along the direction of rotation acting on the wafer; and a processor, which is connected to each first sensor, for calculating the force acting on the wafer based on the output from these first sensors.