Abstract: A substrate processing method includes a liquid discharging step of discharging liquid through a nozzle toward a predetermined supply region on the main surface of a substrate held on a substrate holding unit within a chamber, a humidified gas supplying step of supplying humidified gas with a humidity higher than the humidity within the chamber onto the main surface of the substrate to remove electrical charges carried on the substrate, and a spin-drying step of rotating the substrate about a predetermined rotational axis after the liquid discharging step to spin off the liquid component from the main surface of the substrate. The humidified gas supplying step is started before the start of the liquid discharging step and ended at a predetermined termination timing after the start of the liquid discharging step and before the spin-drying step.

Abstract: A learned model generating method includes: acquiring learning data; and generating a learned model for estimating a factor of an abnormality of a processing target substrate after processing using a processing fluid by performing machine learning of the learning data. The learning data includes a feature quantity and abnormality factor information. The abnormality factor information represents a factor of an abnormality of a learning target substrate after processing using the processing fluid. The feature quantity includes first feature quantity information representing a feature of a time transition of section data in time series data representing a physical quantity of an object used by a substrate processing device that processes the learning target substrate using the processing fluid. The first feature quantity information is represented using times.

Abstract: A substrate processing method includes holding a substrate horizontally, supplying water-containing processing liquid to an upper surface of the substrate, forming a low surface tension liquid film, covering the upper surface by supplying that liquid to the substrate's upper surface, supplying a gas to a center region of the liquid film to form an opening in the center, widening the opening in order to remove the film, rotating the substrate around a predetermined rotational axis along a vertical direction, blowing, in the opening widening step, the gas toward a gas supply position that is set further inward than a peripheral edge of the opening on the upper surface of the substrate, and moving the gas supply position toward the peripheral edge of the upper surface of the substrate, and supplying, the low surface tension liquid toward a liquid landing position that is set further outward and moving the liquid landing position toward the peripheral edge of the upper surface of the substrate.

Abstract: A substrate processing method includes a liquid discharging step of discharging liquid through a nozzle toward a predetermined supply region on the main surface of a substrate held on a substrate holding unit within a chamber, a humidified gas supplying step of supplying humidified gas with a humidity higher than the humidity within the chamber onto the main surface of the substrate to remove electrical charges carried on the substrate, and a spin-drying step of rotating the substrate about a predetermined rotational axis after the liquid discharging step to spin off the liquid component from the main surface of the substrate. The humidified gas supplying step is started before the start of the liquid discharging step and ended at a predetermined termination timing after the start of the liquid discharging step and before the spin-drying step.

Abstract: A substrate processing method includes a substrate holding step of holding a substrate horizontally, a processing liquid supply step of supplying a water-containing processing liquid to an upper surface of the substrate, a liquid film forming step of forming a liquid film of a low surface tension liquid, having a lower surface tension than water, that covers the upper surface by supplying the low surface tension liquid to the upper surface of the substrate to replace the processing liquid on the substrate with the low surface tension liquid, an opening forming step of supplying a gas to a center region of the liquid film to form an opening in the center region of the liquid film, an opening widening step of widening the opening in order to remove the liquid film, a substrate rotating step of rotating, in the opening widening step, the substrate around a predetermined rotational axis along a vertical direction, a gas supply position moving step of blowing, in the opening widening step, the gas toward a gas sup

Abstract: A substrate processing method includes a substrate holding step of holding a substrate horizontally, a liquid droplet discharging step wherein liquid droplets of an organic solvent, formed by mixing the organic solvent and a gas, are discharged from a double-fluid nozzle toward a predetermined discharge region within an upper surface of the substrate, and a liquid film forming step, executed before the liquid droplet discharging step, of supplying the organic solvent to the double fluid nozzle without supplying the gas, so as to discharge the organic solvent in a continuous stream mode from the double-fluid nozzle to form a liquid film of the organic solvent covering the discharge region on the upper surface of the substrate.

Abstract: A substrate processing method includes a substrate holding step of holding a substrate horizontally, a liquid droplet discharging step wherein liquid droplets of an organic solvent, formed by mixing the organic solvent and a gas, are discharged from a double-fluid nozzle toward a predetermined discharge region within an upper surface of the substrate, and a liquid film forming step, executed before the liquid droplet discharging step, of supplying the organic solvent to the double fluid nozzle without supplying the gas, so as to discharge the organic solvent in a continuous stream mode from the double-fluid nozzle to form a liquid film of the organic solvent covering the discharge region on the upper surface of the substrate.

Abstract: A substrate processing method includes a substrate holding step of holding a substrate horizontally, a liquid droplet discharging step of making liquid droplets of an organic solvent, formed by mixing the organic solvent and a gas, be discharged from a double-fluid nozzle toward a predetermined discharge region within an upper surface of the substrate, and a liquid film forming step, executed before the liquid droplet discharging step, of supplying the organic solvent to the double fluid nozzle without supplying the gas to discharge the organic solvent in a continuous stream mode from the double-fluid nozzle to form a liquid film of the organic solvent covering the discharge region on the upper surface of the substrate.