Patents by Inventor NAOKI SHIMASAKI
NAOKI SHIMASAKI has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10866142Abstract: An optical sensor including: a semiconductor layer including a source region and a drain region; a gate electrode facing a region between the source region and the drain region; a photoelectric conversion layer between the region and the gate electrode; and a first transistor having a first gate coupled to one of the source region and the drain region.Type: GrantFiled: April 22, 2019Date of Patent: December 15, 2020Assignee: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.Inventors: Naoki Shimasaki, Tokuhiko Tamaki, Sanshiro Shishido
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Patent number: 10681291Abstract: An imaging device includes a photoelectric converter that generates signal charge; a charge storage node that stores the signal charge; a capacitive element connected to the charge storage node; and a first transistor connected to the charge storage node via the capacitive element, wherein switching between on-state and off-state of the first transistor causes an amount of saturated charge in the charge storage node to change.Type: GrantFiled: April 12, 2019Date of Patent: June 9, 2020Assignee: Panasonic Intellectual Property Management Co., Ltd.Inventors: Naoki Shimasaki, Masashi Murakami
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Patent number: 10453899Abstract: A photodetector includes: a semiconductor substrate including first and second impurity regions; a gate insulating layer located on a region of the semiconductor substrate, the region being between the first and second impurity regions, the gate insulating layer including a photoelectric conversion layer; a gate electrode located on the gate insulating layer and having a light-transmitting property; a first charge transfer channel transferring signal charges corresponding to a current occurring between the first impurity region and the second impurity region depending on a change in a dielectric constant of the photoelectric conversion layer caused by light incidence on the photoelectric conversion layer; a second charge transfer channel diverging from the first charge transfer channel; a first charge storage storing charges, among the signal charges, transferred via the second charge transfer channel; and a first gate switching transfer and shutdown of charges passing through the second charge transfer channType: GrantFiled: April 5, 2018Date of Patent: October 22, 2019Assignee: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.Inventors: Naoki Shimasaki, Tokuhiko Tamaki, Sanshiro Shishido
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Publication number: 20190250042Abstract: An optical sensor including: a semiconductor layer including a source region and a drain region; a gate electrode facing a region between the source region and the drain region; a photoelectric conversion layer between the region and the gate electrode; and a first transistor having a first gate coupled to one of the source region and the drain region.Type: ApplicationFiled: April 22, 2019Publication date: August 15, 2019Inventors: Naoki SHIMASAKI, Tokuhiko TAMAKI, Sanshiro SHISHIDO
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Publication number: 20190238769Abstract: An imaging device includes a photoelectric converter that generates signal charge; a charge storage node that stores the signal charge; a capacitive element connected to the charge storage node; and a first transistor connected to the charge storage node via the capacitive element, wherein switching between on-state and off-state of the first transistor causes an amount of saturated charge in the charge storage node to change.Type: ApplicationFiled: April 12, 2019Publication date: August 1, 2019Inventors: Naoki SHIMASAKI, Masashi MURAKAMI
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Patent number: 10317287Abstract: An optical sensor includes: a semiconductor layer including a first region, a second region, and a third region between the first region and the second region; a gate electrode facing to the semiconductor layer; a gate insulating layer between the third region and the gate electrode, the gate insulating layer including a photoelectric conversion layer; a signal detection circuit including a first signal detection transistor, a first input of the first signal detection transistor being electrically connected to the first region; a first transfer transistor connected between the first region and the first input; and a first capacitor having one end electrically connected to the first input. The signal detection circuit detects an electrical signal corresponding to a change of a dielectric constant of the photoelectric conversion layer, the change being caused by incident light.Type: GrantFiled: July 28, 2017Date of Patent: June 11, 2019Assignee: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.Inventors: Naoki Shimasaki, Tokuhiko Tamaki, Sanshiro Shishido
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Patent number: 10306167Abstract: An imaging device includes: a photoelectric converter generating a signal; a signal detection circuit detecting the signal and including a first transistor having a first control terminal connected to the photoelectric converter, a first input terminal, and a first output terminal, a second transistor having a second control terminal connected to the photoelectric converter, a second input terminal, and a second output terminal, a third transistor having a third control terminal, a third input terminal, and a third output terminal, one of the third input and output terminal connected to one of the second input and output terminal; an output signal line connected to one of the first input and output terminal, and to the other of the third input and output terminal; and a voltage supply circuit connected to the third control terminal, selectively supplying a first voltage or a second voltage to the third control terminal.Type: GrantFiled: May 26, 2016Date of Patent: May 28, 2019Assignee: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.Inventors: Naoki Shimasaki, Masashi Murakami
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Publication number: 20180315798Abstract: A photodetector includes: a semiconductor substrate including first and second impurity regions; a gate insulating layer located on a region of the semiconductor substrate, the region being between the first and second impurity regions, the gate insulating layer including a photoelectric conversion layer; a gate electrode located on the gate insulating layer and having a light-transmitting property; a first charge transfer channel transferring signal charges corresponding to a current occurring between the first impurity region and the second impurity region depending on a change in a dielectric constant of the photoelectric conversion layer caused by light incidence on the photoelectric conversion layer; a second charge transfer channel diverging from the first charge transfer channel; a first charge storage storing charges, among the signal charges, transferred via the second charge transfer channel; and a first gate switching transfer and shutdown of charges passing through the second charge transfer channType: ApplicationFiled: April 5, 2018Publication date: November 1, 2018Inventors: NAOKI SHIMASAKI, Tokuhiko Tamaki, SANSHIRO SHISHIDO
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Publication number: 20170328776Abstract: An optical sensor includes: a semiconductor layer including a first region, a second region, and a third region between the first region and the second region; a gate electrode facing to the semiconductor layer; a gate insulating layer between the third region and the gate electrode, the gate insulating layer including a photoelectric conversion layer: a signal detection circuit including a first signal detection transistor, a first input of the first signal detection transistor being electrically connected to the first region; a first transfer transistor connected between the first region and the first input; and a first capacitor having one end electrically connected to the first input. The signal detection circuit detects an electrical signal corresponding to a change of a dielectric constant of the photoelectric conversion layer, the change being caused by incident light.Type: ApplicationFiled: July 28, 2017Publication date: November 16, 2017Inventors: NAOKI SHIMASAKI, TOKUHIKO TAMAKI, SANSHIRO SHISHIDO
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Publication number: 20160360131Abstract: An imaging device includes: a photoelectric converter generating a signal; a signal detection circuit detecting the signal and including a first transistor having a first control terminal connected to the photoelectric converter, a first input terminal, and a first output terminal, a second transistor having a second control terminal connected to the photoelectric converter, a second input terminal, and a second output terminal, a third transistor having a third control terminal, a third input terminal, and a third output terminal, one of the third input and output terminal connected to one of the second input and output terminal; an output signal line connected to one of the first input and output terminal, and to the other of the third input and output terminal; and a voltage supply circuit connected to the third control terminal, selectively supplying a first voltage or a second voltage to the third control terminal.Type: ApplicationFiled: May 26, 2016Publication date: December 8, 2016Inventors: NAOKI SHIMASAKI, MASASHI MURAKAMI