Abstract: A semiconductor relay module includes: first and second semiconductor relays; and first to third input terminals and first and second output terminals that are exposed from a housing. The first semiconductor relay includes a first optocoupler and a first switch, and the second semiconductor relay includes a second optocoupler and a second switch. The first switch and the second switch are connected by an output connecting line, the third input terminal is connected to an input connecting line, and the input connecting line and the output connecting line are covered by the housing.

Abstract: A physical quantity sensor includes a first substrate, an electrode provided on the first substrate, a diaphragm made of semiconductor material, a second substrate fixed to the first substrate, a dielectric film provided on the diaphragm, and a wall provided between the dielectric film and the electrode. The second substrate supports the diaphragm such that the diaphragm has an opposing surface facing the electrode across a space. The dielectric film is provided on the opposing surface of the diaphragm. The dielectric film has a surface facing the electrode across the space. The wall includes a first protrusion and a second protrusion. The first protrusion protrudes toward the electrode from the surface of the dielectric film. The second protrusion protrudes toward the electrode from the first protrusion, and contacts the electrode. The second protrusion is made of material which is different from material of the dielectric film.

Abstract: A physical quantity sensor includes a first substrate, an electrode provided on the first substrate, a diaphragm made of semiconductor material, a second substrate fixed to the first substrate, a dielectric film provided on the diaphragm, and a wall provided between the dielectric film and the electrode. The second substrate supports the diaphragm such that the diaphragm has an opposing surface facing the electrode across a space. The dielectric film is provided on the opposing surface of the diaphragm. The dielectric film has a surface facing the electrode across the space. The wall includes a first protrusion and a second protrusion. The first protrusion protrudes toward the electrode from the surface of the dielectric film. The second protrusion protrudes toward the electrode from the first protrusion, and contacts the electrode. The second protrusion is made of material which is different from material of the dielectric film.

Abstract: An infrared sensor, which achieves a low manufacturing cost, or has high sensitivity, or in which an increase in heat capacity is reduced, is provided. The infrared sensor includes a first infrared absorbing portion, an infrared sensing portion for sensing infrared rays based on infrared rays absorbed by the first infrared absorbing portion, and a plurality of protrusions including metal and disposed apart from each other on a surface of the first infrared absorbing portion. Since an absorption rate of infrared rays is improved, sensitivity can be improved, or an increase in heat capacity can be reduced.

Abstract: A semiconductor physical quantity sensor includes: a first base material; an electrode formed on the first base material; a diaphragm which bends in accordance with a physical quantity applied from the outside; a second base material fixed to the first base material and supporting the diaphragm such that the diaphragm is opposed to the electrode with a space (S) in between; and an insulator formed on a surface on the first base material side of the diaphragm. Moreover, a wall portion to define the space (S) is formed between the insulator and the electrode.

Abstract: A semiconductor physical quantity sensor includes: a first base material; an electrode formed on the first base material; a diaphragm which bends in accordance with a physical quantity applied from the outside; a second base material fixed to the first base material and supporting the diaphragm such that the diaphragm is opposed to the electrode with a space (S) in between; and an insulator formed on a surface on the first base material side of the diaphragm. Moreover, a wall portion to define the space (S) is formed between the insulator and the electrode.

Abstract: An infrared sensor, which achieves a low manufacturing cost, or has high sensitivity, or in which an increase in heat capacity is reduced, is provided. The infrared sensor includes a first infrared absorbing portion, an infrared sensing portion for sensing infrared rays based on infrared rays absorbed by the first infrared absorbing portion, and a plurality of protrusions including metal and disposed apart from each other on a surface of the first infrared absorbing portion. Since an absorption rate of infrared rays is improved, sensitivity can be improved, or an increase in heat capacity can be reduced.

Abstract: The infrared sensor (1) includes a base (10), and an infrared detection element (3) formed over a surface of the base (10). The infrared detection element (3) comprises an infrared absorption member (33) in the form of a thin film configured to absorb infrared, and a temperature detection member (30) configured to measure a temperature difference between the infrared absorption member (33) and the base (10). The temperature detection member (30) includes a p-type polysilicon layer (35) formed over the infrared absorption member (33) and the base (10), an n-type polysilicon layer (34) formed over the infrared absorption member (33) and the base (10) without contact with the p-type polysilicon layer (33), and a connection layer (36) configured to electrically connect the p-type polysilicon layer (35) to the n-type polysilicon layer (34). Each of the p-type polysilicon layer (35) and the n-type polysilicon layer (34) has an impurity concentration in a range of 1018 to 1020 cm?3.

Abstract: The infrared sensor (1) includes a base (10), and an infrared detection element (3) formed over a surface of the base (10). The infrared detection element (3) comprises an infrared absorption member (33) in the form of a thin film configured to absorb infrared, and a temperature detection member (30) configured to measure a temperature difference between the infrared absorption member (33) and the base (10). The temperature detection member (30) includes a p-type polysilicon layer (35) formed over the infrared absorption member (33) and the base (10), an n-type polysilicon layer (34) formed over the infrared absorption member (33) and the base (10) without contact with the p-type polysilicon layer (33), and a connection layer (36) configured to electrically connect the p-type polysilicon layer (35) to the n-type polysilicon layer (34). Each of the p-type polysilicon layer (35) and the n-type polysilicon layer (34) has an impurity concentration in a range of 1018 to 1020 cm?3.

Abstract: The infrared sensor (1) includes a base (10), and an infrared detection element (3) formed over a surface of the base (10). The infrared detection element (3) includes an infrared absorption member (33) in the form of a thin film configured to absorb infrared, a temperature detection member (30) configured to measure a temperature difference between the infrared absorption member (33) and the base (10), and a safeguard film (39). The infrared element (3) is spaced from the surface of the base (10) for thermal insulation. The temperature detection member (30) includes a p-type polysilicon layer (35) formed over the infrared absorption member (33) and the base (10), an n-type polysilicon layer (34) formed over the infrared absorption member (33) and the base (10) without contact with the p-type polysilicon layer (35), and a connection layer (36) configured to electrically connect the p-type polysilicon layer (35) to the n-type polysilicon layer (34).

Abstract: In the method for manufacturing the infrared image sensor, first, a thermal insulation layer (33) is made by forming a silicon dioxide film (31) on a first area (A1) followed by forming a silicon nitride film (32) on the silicon dioxide film (31). The silicon dioxide film (31) has compression stress. The first area (A1) is reserved in a surface of a silicon substrate (1) for forming an infrared detection element (3). The silicon nitride film (32) has tensile stress. Next, a well region (41) is formed in a second area (A2) reserved in the surface of the silicon substrate (1) for forming a MOS transistor (4). After that, a gate insulation film (45) of the MOS transistor (4) is formed by means of thermal oxidation of the surface of the silicon substrate (1). Thereafter, a temperature detection element (36) is formed on the thermal insulation layer (33). Subsequently, a drain region (43) and a source region (44) of the MOS transistor (4) are formed in the well region (41).