Abstract: A consecutive Doherty amplifier is disclosed. The Doherty amplifier includes a carrier amplifier, a power splitter, a peak amplifier, and a phase compensator. The carrier amplifier receives a radio frequency signal with interposing any signal splitters. The power splitter splits an output of the carrier amplifier into first and second split signals. The phase compensator transfers the second split signal to the peak amplifier. The first split signal is combined with the output of the peak amplifier.

Abstract: Dielectric breakdown resistance of a power module including a SiC-IGBT and a SiC diode is improved. The power module includes a SiC-IGBT 110 and a SiC diode 111, and a film thickness of a resin layer 323 covering an upper portion of an electric field relaxation region 320 of the SiC-IGBT 110 is larger than a chip thickness of the SiC-IGBT 110, that is, for example, 200 ?m or more.

Abstract: The present technology relates to a headphone and a reproduction control method that enable external sound to be caught more easily and promptly, and a program. The headphone includes: a sound collecting unit configured to collect outer sound; a detection unit configured to detect a specific motion to a sensor unit for capture of the outer sound; and a reproduction control unit configured to cause, in a case where the specific motion is detected, the outer sound collected by the sound collecting unit to be reproduced and volume of audio under reproduction to be reduced or the reproduction of the audio to stop. The present technology can be applied to, for example, a headphone.

Abstract: A film forming apparatus is provided. The apparatus comprises a processing chamber accommodating a plurality of substrates; a plurality of substrate supporting units disposed in the processing chamber and configured to place the substrates thereon; a substrate moving mechanism configured to linearly move the substrate supporting units in a first direction; sputter particle emitting units, each having a target for emitting sputter particles into the processing chamber; and a controller configured to control the sputter particle emitting units and the substrate moving mechanism. The controller controls the substrate moving mechanism to linearly move the substrate supporting units on which the substrates are placed in the first direction and controls the sputter particle emitting units to emit sputter particles to be deposited on the substrates.

Abstract: [Problem] To provide a polyimide film laminated substrate in which stable peeling with a constant low force from an inorganic substrate is enabled when a polyimide film is to be peeled from an inorganic substrate even after heat treatment at a temperature exceeding 500° C. is performed. [Solution] Silane coupling agent treatment is performed on an inorganic substrate on which a thin film of an aluminum oxide, a thin film of a composite oxide of aluminum and silicon, a thin film of molybdenum or tungsten, or an alloy thin film of molybdenum and tungsten is formed continuously or discontinuously on a part of at least one surface thereof, and a polyimide film layer is further laminated on the silane coupling agent layer. In the obtained laminate, the part where the aluminum oxide thin film layer is present functions as an easily-peelable layer, the part where no aluminum oxide thin film layer functions as an easily-bondable part.

Abstract: Provided is an input system including an instruction device; a detection device that detects an instruction position of the instruction device; a display device that is provided separately from the detection device and that displays an image of a space; a position detector that detects, in the space, a line-of-sight position in a line-of-sight of the position detector; a processor; and a memory storing instructions, which when executed by the processor, cause the processor to set, in the space, an instruction target area including a reference position of the instruction device, based on the line-of-sight position detected by the position detector at the time of reception of a predetermined operation by the instruction device, and control the display device to display the instruction position of the instruction device in the instruction target area and on the image of the space.

Abstract: Active pen includes first and second electrodes provided at different positions, a transmission circuit that uses a booster circuit to cause a change in the first electrode to thereby transmit a downlink signal, a reception circuit that uses the second electrode to detect an uplink signal, and a stop filter that prevents a change in a potential of the first electrode from affecting a potential of the uplink signal detected by the reception circuit.

Abstract: In a SiC power MISFET having a lateral surface of a trench formed in an upper surface of a SiC epitaxial substrate as a channel region, a silicon carbide semiconductor device having low resistance, high performance, and high reliability is realized. As a means therefor, a SiC power MISFET is formed as an island-shaped unit cell on an upper surface of an n-type SiC epitaxial substrate that is provided with a drain region on a bottom surface thereof, the SiC power MISFET including: an n-type current diffusion region that surrounds a p-type body layer contact region and an n-type source region in the indicated order in a plan view; a p-type body layer and an n-type JFET region; a trench that is formed on the body layer so as to span between the source region and the current diffusion region adjacent each other in a first direction and extends in the first direction; and a gate electrode embedded in the trench with a gate insulating film therebetween.

Abstract: Provided is a drug that allows highly-efficient skipping of exon. The present invention provides an antisense oligomer wherein two or more unit oligomers targeting sequences that are neither consecutive nor overlap with each other in the same exon are connected.

Abstract: A stage device for holding a substrate in a processing apparatus for processing the substrate includes a stage, a stage rotating mechanism, and a cold heat transfer mechanism. The stage is configured to hold the substrate in a processing chamber. The stage rotating mechanism includes a rotation shaft extending downward from a center of a bottom surface of the stage and a motor configured to rotate the stage via the rotation shaft. The cold heat transfer mechanism includes at least one cold heat transfer body that is fixedly disposed at a position spaced away from the rotation shaft below the stage and is configured to transfer cold heat of a chiller. The cold heat transfer mechanism is disposed with a gap between the cold heat transfer mechanism and the stage.

Abstract: A vacuum transfer device configured to transfer a substrate in a vacuum includes: a flat motor including a body, a plurality of electromagnetic coils arrayed in the body, and a current controller that controls a current supplied to the electromagnetic coil; a transfer unit including a substrate holder configured to hold a substrate, and a base having a plurality of magnets arrayed therein and magnetically levitating from a surface of the body by a magnetic field generated by the electromagnetic coil, and move in a magnetically levitating state thereby moving the substrate holder; and a temperature controller configured to adjust temperature of at least a portion of the body. The temperature of the transfer unit is adjusted by stopping the magnetic levitation of the base by controlling the current supplied to the electromagnetic coil, and bringing the base into contact with a temperature-adjusted portion of the body.

Abstract: A vacuum transfer device includes: a main body including an arm unit with an internal mechanical part therein and a vacuum seal, and configured to transfer a high temperature substrate in a vacuum; a substrate holder connected to the main body to hold the substrate; a heat transport member provided on a surface of the main body and made of a material having a higher thermal conductivity than that of a material constituting the main body in a creeping direction to transport heat transferred from the substrate to the substrate holder; and a heat radiator configured to dissipate heat transported by the heat transport member.

Abstract: On receiving simplified settlement data generated form settlement data and ID data for downloading electronic-receipt data from an electronic-receipt server, both from a settlement-processing apparatus, a portable terminal records the simplified settlement data in association with the ID data. The display unit of the portable terminal displays the simplified settlement data thus recorded. The portable terminal downloads electronic-receipt data from the electronic-receipt server by using the ID data recorded in association with the simplified settlement data, when the input unit is operated, thereby commanding that the electronic receipt related to the simplified settlement data displayed by the display unit should be downloaded. The electronic-receipt data is recorded in the electronic-receipt recording unit. The display unit displays the electronic receipt on the basis the electronic-receipt data recorded in the electronic-receipt recording unit.

Abstract: Provided is a drug that allows highly-efficient skipping of exon. The present invention provides an antisense oligomer wherein two or more unit oligomers targeting sequences that are neither consecutive nor overlap with each other in the same exon are connected.

Abstract: Dielectric breakdown resistance of a power module including a SiC-IGBT and a SiC diode is improved. The power module includes a SiC-IGBT 110 and a SiC diode 111, and a film thickness of a resin layer 323 covering an upper portion of an electric field relaxation region 320 of the SiC-IGBT 110 is larger than a chip thickness of the SiC-IGBT 110, that is, for example, 200 ?m or more.

Abstract: The present invention provides an oligomer which efficiently enables to cause skipping of the 53rd exon in the human dystrophin gene. Also provided is a pharmaceutical composition which causes skipping of the 53rd exon in the human dystrophin gene with a high efficiency.

Abstract: On receiving simplified settlement data generated form settlement data and ID data for downloading electronic-receipt data from an electronic-receipt server, both from a settlement-processing apparatus, a portable terminal records the simplified settlement data in association with the ID data. The display unit of the portable terminal displays the simplified settlement data thus recorded. The portable terminal downloads electronic-receipt data from the electronic-receipt server by using the ID data recorded in association with the simplified settlement data, when the input unit is operated, thereby commanding that the electronic receipt related to the simplified settlement data displayed by the display unit should be downloaded. The electronic-receipt data is recorded in the electronic-receipt recording unit. The display unit displays the electronic receipt on the basis the electronic-receipt data recorded in the electronic-receipt recording unit.

Abstract: The present invention provides an oligomer which efficiently enables to cause skipping of the 53rd exon in the human dystrophin gene. Also provided is a pharmaceutical composition which causes skipping of the 53rd exon in the human dystrophin gene with a high efficiency.

Abstract: The sputter device according to one embodiment of the present invention has: a treatment vessel in which a substrate is housed; a slit plate which is disposed above the substrate inside the treatment vessel so as to be located parallel to a surface of the substrate and which has formed therein an opening that penetrates in the plate-thickness direction; and a heat-receiving plate which is formed of a material having a higher heat resistance than the slit plate and which is placed on top of the slit plate beneath a target material provided at a slant with respect the slit plate.

Abstract: A plurality of trench gate electrodes are formed from an upper surface to reach an intermediate depth of an n-type SiC epitaxial substrate including an n-type drain region on a lower surface and an n-type source region on an upper surface in contact with the source region to be arranged in a direction along the upper surface. Here, at least three side surfaces among four side surfaces of each of the trench gate electrodes having a rectangular planar shape are in contact with a p-type body layer below the source region. In addition, a JFET region in the SiC epitaxial substrate and a source electrode connected to the source region immediately above the JFET region extend along a direction in which the plurality of trench gate electrodes are arranged.