Patents by Inventor Naoko Kawai

Naoko Kawai has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9150759
    Abstract: A chemical mechanical polishing composition for polishing silicon wafers is provided, containing: water, optionally, an abrasive; a cation according to formula (I); piperazine or a piperazine derivative according to formula (II); and, a quaternary ammonium compound; wherein the chemical mechanical polishing composition exhibits a pH of 9 to 12. Also provided are methods of making and using the chemical mechanical polishing composition.
    Type: Grant
    Filed: September 27, 2013
    Date of Patent: October 6, 2015
    Assignees: Rohm and Haas Electronic Materials CMP Holdings, Inc, Nitta Haas Incorporated
    Inventors: Yasuyuki Itai, Naresh Kumar Penta, Naoko Kawai, Hiroyuki Nakano, Shinichi Haba, Yoshiharu Ota, Takayuki Matsushita, Masashi Teramoto, Sakiko Nakashima, Tomoyuki Toda, Koichi Yoshida, Lee Melbourne Cook
  • Publication number: 20150093900
    Abstract: A chemical mechanical polishing composition for polishing silicon wafers is provided, containing: water, optionally, an abrasive; a cation according to formula (I); piperazine or a piperazine derivative according to formula (II); and, a quaternary ammonium compound; wherein the chemical mechanical polishing composition exhibits a pH of 9 to 12. Also provided are methods of making and using the chemical mechanical polishing composition.
    Type: Application
    Filed: September 27, 2013
    Publication date: April 2, 2015
    Inventors: Yasuyuki Itai, Naresh Kumar Penta, Naoko Kawai, Hiroyuki Nakano, Shinichi Haba, Yoshiharu Ota, Takayuki Matsushita, Masashi Teramoto, Sakiko Nakashima, Tomoyuki Toda, Koichi Yoshida, Lee Melbourne Cook
  • Patent number: 8980749
    Abstract: A method for polishing a silicon wafer is provided, comprising: providing a silicon wafer; providing a polishing pad having a polishing layer which is the reaction product of raw material ingredients, including: a polyfunctional isocyanate; and, a curative package; wherein the curative package contains an amine initiated polyol curative and a high molecular weight polyol curative; wherein the polishing layer exhibits a density of greater than 0.4 g/cm3; a Shore D hardness of 5 to 40; an elongation to break of 100 to 450%; and, a cut rate of 25 to 150 ?m/hr; and, wherein the polishing layer has a polishing surface adapted for polishing the silicon wafer; and, creating dynamic contact between the polishing surface and the silicon wafer.
    Type: Grant
    Filed: October 24, 2013
    Date of Patent: March 17, 2015
    Assignees: Rohm and Haas Electronic Materials CMP Holdings, Inc., Nitta Haas Incorporated
    Inventors: Yasuyuki Itai, Bainian Qian, Hiroyuki Nakano, David B. James, Naoko Kawai, Katsumasa Kawabata, Koichi Yoshida, Kazutaka Miyamoto, James Murnane, Fengji Yeh, Marty W. DeGroot