Patents by Inventor Naoko Nakamoto

Naoko Nakamoto has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20230103733
    Abstract: A stabilizer represented by the following formula for suppressing generation of silane from a polysilane composition: CH2?CH—R1 wherein R1 is C3-20 linear, branched or cyclic alkyl group, C2-15 linear or branched alkenyl group or C7-20 aryl group substituted with alkenyl group. A invention also relates to a method for suppressing generation of silane and a method for inactivating a polysilane, and a polysilane inactivated treatment composition.
    Type: Application
    Filed: March 15, 2021
    Publication date: April 6, 2023
    Inventors: Hideyuki TAKAGISHI, Naoko NAKAMOTO, Atsuhiko SATO
  • Publication number: 20220363549
    Abstract: To provide an amorphous silicon forming composition, which has high affinity with a substrate. An amorphous silicon forming composition comprising a polysilane having an amino group; and a solvent.
    Type: Application
    Filed: November 18, 2020
    Publication date: November 17, 2022
    Inventors: Naoko NAKAMOTO, Hideyuki TAKAGISH, Takashi FUJIWARA, Atsuhiko SATO
  • Publication number: 20220017373
    Abstract: To provide an amorphous silicon forming composition, which has high affinity with a substrate, is excellent in filling properties, and is capable of forming a thick film. [Means for Solution] An amorphous silicon forming composition comprising: (a) a block copolymer comprising a linear and/or cyclic block A having a polysilane skeleton comprising 5 or more silicon and a block B having a polysilazane skeleton comprising 20 or more silicon, wherein at least one silicon in the block A and at least one silicon in the block B are connected by a single bond and/or a crosslinking group comprising silicon, and (b) a solvent.
    Type: Application
    Filed: November 26, 2019
    Publication date: January 20, 2022
    Inventors: Naoko NAKAMOTO, Takashi FUJIWARA, Atsuhiko SATO
  • Publication number: 20220009782
    Abstract: The present invention provides a method for producing a novel amorphous silicon sacrifice film and an amorphous silicon forming composition capable of filling trenches having a high aspect ratio to form an amorphous silicon sacrifice film that is excellent in affinity with a substrate. A method for producing an amorphous silicon sacrifice film, comprising (i) polymerizing a cyclic polysilane comprising 5 or more silicon or a composition comprising the cyclic polysilane by light irradiation and/or heating to form a polymer having a polysilane skeleton, (ii) applying an amorphous silicon forming composition comprising said polymer having a polysilane skeleton, polysilazane and a solvent above a substrate to form a coating film, and (iii) heating the coating film in a non-oxidizing atmosphere.
    Type: Application
    Filed: November 26, 2019
    Publication date: January 13, 2022
    Inventors: Naoko NAKAMOTO, Takashi FUJIWARA, Atsuhiko SATO
  • Patent number: 10913852
    Abstract: To provide a siloxazane compound capable of shortening the time of a siliceous film producing process and a composition comprising the same. A siloxazane compound having a specific structure, wherein the ratio of the number of O atoms to the total number of O atoms and N atoms is 5% or more and 25% or less, and in the spectrum of the siloxazane compound obtained by 29Si-NMR in accordance with the inverse gate decoupling method, the ratio of the area of the peak detected in ?75 ppm to ?90 ppm is 4.0% or less to the area of the peak detected in ?25 ppm to ?55 ppm; and a composition comprising the same.
    Type: Grant
    Filed: November 21, 2017
    Date of Patent: February 9, 2021
    Assignee: Merck Patent GmbH
    Inventors: Toshiya Okamura, Naotaka Nakadan, Bertram Barnickel, Rikio Kozaki, Naoko Nakamoto
  • Publication number: 20190300713
    Abstract: To provide a siloxazane compound capable of shortening the time of a siliceous film producing process and a composition comprising the same. A siloxazane compound having a specific structure, wherein the ratio of the number of O atoms to the total number of O atoms and N atoms is 5% or more and 25% or less, and in the spectrum of the siloxazane compound obtained by 29Si-NMR in accordance with the inverse gate decoupling method, the ratio of the area of the peak detected in ?75 ppm to ?90 ppm is 4.0% or less to the area of the peak detected in ?25 ppm to ?55 ppm; and a composition comprising the same.
    Type: Application
    Filed: November 21, 2017
    Publication date: October 3, 2019
    Inventors: Toshiya OKAMURA, Naotaka NAKADAN, Bertram BARNICKEL, Rikio KOZAKI, Naoko NAKAMOTO
  • Patent number: 8969172
    Abstract: [Problem] To provide a method for forming an isolation structure having a low shrinkage percentage and a low tensile stress. [Means for Solving] A first polysilazane composition containing a porogen is cast on the surface of a substrate to form a coat, and then the coat is fired to form a porous siliceous film having a refractive index of 1.3 or less. Thereafter, the surface of the porous siliceous film is soaked with a second polysilazane composition, and then fired to form an isolation structure of a siliceous film having a refractive index of 1.4 or more.
    Type: Grant
    Filed: November 2, 2011
    Date of Patent: March 3, 2015
    Assignee: AZ Electronic Materials USA Corp.
    Inventors: Naoko Nakamoto, Katsuchika Suzuki, Shinji Sugahara, Tatsuro Nagahara
  • Publication number: 20130214383
    Abstract: [Problem] To provide a method for forming an isolation structure having a low shrinkage percentage and a low tensile stress. [Means for Solving] A first polysilazane composition containing a porogen is cast on the surface of a substrate to form a coat, and then the coat is fired to form a porous siliceous film having a refractive index of 1.3 or less. Thereafter, the surface of the porous siliceous film is soaked with a second polysilazane composition, and then fired to form an isolation structure of a siliceous film having a refractive index of 1.4 or more.
    Type: Application
    Filed: November 2, 2011
    Publication date: August 22, 2013
    Applicant: AZ ELECTRONIC MATERIALS USA CORP.
    Inventors: Naoko Nakamoto, Katsuchika Suzuki, Shinji Sugahara, Tatsuro Nagahara