Abstract: According to one embodiment, a solid-state imaging device including a plurality of pixels two-dimensionally arranged at a preset pitch in a semiconductor substrate is provided. Each of the pixels is configured to include first and second photodiodes that photoelectrically convert incident light and store signal charges obtained by conversion, a first micro-lens that focuses light on the first photodiode, and a second micro-lens that focuses light on the second photodiode. The saturation charge amount of the second photodiode is larger than that of the first photodiode. Further, the aperture of the second micro-lens is smaller than that of the first micro-lens.

Abstract: According to one embodiment, a solid-state imaging device including a plurality of pixels two-dimensionally arranged at a preset pitch in a semiconductor substrate is provided. Each of the pixels is configured to include first and second photodiodes that photoelectrically convert incident light and store signal charges obtained by conversion, a first micro-lens that focuses light on the first photodiode, and a second micro-lens that focuses light on the second photodiode. The saturation charge amount of the second photodiode is larger than that of the first photodiode. Further, the aperture of the second micro-lens is smaller than that of the first micro-lens.

Abstract: A pixel area, which is composed of a plurality of unit pixels each including a photoelectric conversion unit and a signal scanning circuit, is formed on a semiconductor substrate. An optical black pixel region, in which a plurality of optical black pixels for setting a dark-time level are formed, is formed in the pixel area. A barrier layer, which has an impurity concentration that is higher than an impurity concentration of the semiconductor substrate and has a conductivity type that is identical to a conductivity type of the semiconductor substrate, is formed in the optical black pixel region of the semiconductor substrate.

Abstract: A pixel area, which is composed of a plurality of unit pixels each including a photoelectric conversion unit and a signal scanning circuit, is formed on a semiconductor substrate. An optical black pixel region, in which a plurality of optical black pixels for setting a dark-time level are formed, is formed in the pixel area. A barrier layer, which has an impurity concentration that is higher than an impurity concentration of the semiconductor substrate and has a conductivity type that is identical to a conductivity type of the semiconductor substrate, is formed in the optical black pixel region of the semiconductor substrate.