Abstract: To provide a manufacturing method for a surface acoustic wave device, which makes it possible to easily and reliably connect a piezoelectric element to a substrate having an external connection terminal, and a surface acoustic wave device capable of being made smaller using this manufacturing method. A surface acoustic wave device, having a first substrate which has a interdigital transducer and an electrode pad on one side; and a second substrate which has an external terminal, and a castellation formed on the side connected to the external terminal, wherein the surface of the second substrate opposite the surface on which the external terminal is formed is bonded by a bonding layer to the electrode pad, the first substrate is larger in size than the second substrate, and a part of the electrode pad, which extends outwardly of the second substrate, is connected to the castellation by a plating layer.

Abstract: To provide a manufacturing method for a surface acoustic wave device, which makes it possible to easily and reliably connect a piezoelectric element to a substrate having an external connection terminal, and a surface acoustic wave device capable of being made smaller using this manufacturing method. A surface acoustic wave device, having a first substrate which has a interdigital transducer and an electrode pad on one side; and a second substrate which has an external terminal, and a castellation formed on the side connected to the external terminal, wherein the surface of the second substrate opposite the surface on which the external terminal is formed is bonded by a bonding layer to the electrode pad, the first substrate is larger in size than the second substrate, and a part of the electrode pad, which extends outwardly of the second substrate, is connected to the castellation by a plating layer.

Abstract: A surface acoustic wave device that enables to reduce heating process, prevent from heat break, and make thin profile is to be provided. The surface acoustic wave device includes a substrate, a surface acoustic wave element having a comb electrode formed on a piezoelectric substrate, and being flip-mounted on the substrate using a bump in such a manner as the comb electrode is disposed opposite to the substrate, a first resin layer covering the surface acoustic wave element, and a second resin layer formed on the first resin layer, wherein the first resin layer and the second resin layer are thermosetting resins in which state transitions of being softened and thereafter cured are produced through heating process, and the first resin layer is formed of a resin material having greater fluidity caused by softening than the resin material of the second resin layer.

Abstract: An integrated circuit contactor includes a base of an insulating material, the base being elastically deformable. A plurality of pads of a first conductive material are bonded to the base at positions corresponding to positions of terminals on an integrated circuit. A plurality of contacts of a second conductive material are bonded to the plurality of pads, respectively, the terminals of the integrated circuit being electrically connected to the contacts only when a pressure is exerted onto the contacts by the terminals of the integrated circuit, each contact having a projecting edge with a roughness produced by pulling a wire of the second conductive material apart from a corresponding one of the plurality of pads after the wire is bonded to the corresponding pad.

Abstract: A surface acoustic wave device that enables to reduce heating process, prevent from heat break, and make thin profile is to be provided. The surface acoustic wave device includes a substrate, a surface acoustic wave element having a comb electrode formed on a piezoelectric substrate, and being flip-mounted on the substrate using a bump in such a manner as the comb electrode is disposed opposite to the substrate, a first resin layer covering the surface acoustic wave element, and a second resin layer formed on the first resin layer, wherein the first resin layer and the second resin layer are thermosetting resins in which state transitions of being softened and thereafter cured are produced through heating process, and the first resin layer is formed of a resin material having greater fluidity caused by softening than the resin material of the second resin layer.

Abstract: A module device with mounted components with no damage in reliability. This device has a board with metallized connection electrodes and components mounted on the board by arrangement in the longitudinal direction of the board, and each connected to the connection electrode via a bump. Bumps for connecting the components to the board connection electrodes are so set that their height may increase toward the side of the board with the reference of the height of the bump located at the center region in the longitudinal direction of the board.

Abstract: An integrated circuit contactor includes a base of an insulating material, the base being elastically deformable. A plurality of pads of a first conductive material are bonded to the base at positions corresponding to positions of terminals on an integrated circuit. A plurality of contacts of a second conductive material are bonded to the plurality of pads, respectively, the terminals of the integrated circuit being electrically connected to the contacts only when a pressure is exerted onto the contacts by the terminals of the integrated circuit, each contact having a projecting edge with a roughness produced by pulling a wire of the second conductive material apart from a corresponding one of the plurality of pads after the wire is bonded to the corresponding pad.

Abstract: An integrated circuit contactor includes a base of an insulating material, the base being elastically deformable. A plurality of pads of a first conductive material are bonded to the base at positions corresponding to positions of terminals on an integrated circuit. A plurality of contacts of a second conductive material are bonded to the plurality of pads, respectively, the terminals of the integrated circuit being electrically connected to the contacts only when a pressure is exerted onto the contacts by the terminals of the integrated circuit, each contact having a projecting edge with a roughness produced by pulling a wire of the second conductive material apart from a corresponding one of the plurality of pads after the wire is bonded to the corresponding pad.

Abstract: An integrated circuit testing device includes a flexible base of an insulating material, the base having a first surface and a second surface opposite to each other, an integrated circuit to be tested being bonded to the first surface. A conductive wiring layer is provided on the first or second surface of the base, the wiring layer including a plurality of projecting contacts over the first surface at positions which electrodes of the integrated circuit are connected to. An elastic member is provided beneath the second surface of the base opposite to the first surface, the elastic member having a first level of hardness. A flexible film member is provided between the second surface of the base and the elastic member, the film member having a second level of hardness higher than the first level of hardness of the elastic member.

Abstract: A test board includes an insulating part provided to face a semiconductor device when the semiconductor device is mounted on the test board, a sloped connection hole formed in the insulating part for accepting a projection electrode when the semiconductor device is mounted on the test board, and a conductive part formed in the insulating part so as to be in contact with and electrically connected to the projection electrode. When the semiconductor device is mounted on the test board, the semiconductor device or the projection electrode is supported by the insulating part.

Abstract: A process for manufacturing semiconductor device having a package in which a semiconductor device is sealed includes a base, and a metallic film is formed on a surface of the base. The semiconductor chip is formed on the metallic film. A pad formed on the semiconductor chip is connected to the metallic film by a wire. A sealing layer is formed on the metallic film. Leads are formed on the glass layer. A connecting layer is formed on the metallic film and contains electrically conductive particles. The connecting layer is in contact with a lead for a power supply system and connecting the metallic film to the lead.

Abstract: A semiconductor device having a package in which a semiconductor device is sealed includes a base, and a metallic film is formed on a surface of the base. The semiconductor chip is formed on the metallic film. A pad formed on the semiconductor chip is connected to the metallic film by a wire. A sealing layer is formed on the metallic film. Leads are formed on the glass layer. A connecting layer is formed on the metallic film and contains electrically conductive particles. The connecting layer is in contact with a lead for a power supply system and connecting the metallic film to the lead.