Patents by Inventor Naomi Yazaki

Naomi Yazaki has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7521368
    Abstract: The present invention provides a method for manufacturing a semiconductor device having high characteristic and reliability. The etching damage during dry etching after forming an electrode or a wiring over an insulating film is prevented. The damage is suppressed by forming a conductive layer so that charged particles due to plasma during dry etching are not generated in a semiconductor layer. Accordingly, it is an object of the invention to provide a method not for generating the deterioration of the transistor characteristic especially in a thin film transistor having a minute structure.
    Type: Grant
    Filed: May 4, 2005
    Date of Patent: April 21, 2009
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Tetsuji Yamaguchi, Etsuko Asano, Naomi Yazaki, Tomoya Futamura, Tomoko Nishikawa
  • Publication number: 20050250308
    Abstract: The present invention provides a method for manufacturing a semiconductor device having high characteristic and reliability. The etching damage during dry etching after forming an electrode or a wiring over an insulating film is prevented. The damage is suppressed by forming a conductive layer so that charged particles due to plasma during dry etching are not generated in a semiconductor layer. Accordingly, it is an object of the invention to provide a method not for generating the deterioration of the transistor characteristic especially in a thin film transistor having a minute structure.
    Type: Application
    Filed: May 4, 2005
    Publication date: November 10, 2005
    Applicant: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Tetsuji Yamaguchi, Etsuko Asano, Naomi Yazaki, Tomoya Futamura, Tomoko Nishikawa