Abstract: An RE123-based oxide superconductor characterized by comprising a conductive layer containing an REBa2Cu3O7-?-based oxide superconductor formed using a mixed material of at least RE2BaO4 and a Bax—Cuy—Oz-based material and a holding member which holds said conductive layer, where, RE is one type or more of elements selected from La, Nd, Sm, Eu, Gd, Dy, Ho, Er, Tm, Yb, Lu, and Y.

Abstract: An RE123-based oxide superconductor characterized by comprising a conductive layer containing an REBa2Cu3O7-?-based oxide superconductor formed using a mixed material of at least RE2BaO4 and a Bax—Cuy—Oz-based material and a holding member which holds said conductive layer, where, RE is one type or more of elements selected from La, Nd, Sm, Eu, Gd, Dy, Ho, Er, Tm, Yb, Lu, and Y.

Abstract: A method of fabrication of an RE-Ba-Cu—O-based oxide superconductor, characterized by using an RE-Ba-O-based compound (RE being one type or two types or more of rare earth elements) and a Ba-Cu-O-based material for liquid phase as a starting material, melting the material for liquid phase, then growing the crystal.

Abstract: The present invention provides a method for joining an RE123 oxide superconductor matrix obtained by a melt process by the use of a solder material. The (110) plane of an RE123 oxide superconductor matrix obtained by a melt process is used as the plane to be joined, a solder material composed of an RE123 oxide superconductor having a lower melting point than the above-mentioned RE123 oxide superconductor is interposed between the planes to be joined, and this solder material is melted and then solidified to form a joining layer, thereby joining the matrices. The solder material can be a sinter, a melt-processed material, a powder, a slurry, or a molded powder.

Abstract: The present invention provides a method for joining an RE123 oxide superconductor matrix obtained by a melt process by the use of a solder material. The (110) plane of an RE123 oxide superconductor matrix obtained by a melt process is used as the plane to be joined, a solder material composed of an RE123 oxide superconductor having a lower melting point than the above-mentioned RE123 oxide superconductor is interposed between the planes to be joined, and this solder material is melted and then solidified to form a joining layer, thereby joining the matrices. The solder material can be a sinter, a melt-processed material, a powder, a slurry, or a molded powder.

Abstract: A bulk superconductor including a plurality of units each composed of a substrate and a superconductive layer of R--Ba--Cu--O, where R is selected from La, Nd, Sm, Eu, Gd, Y, Dy, Ho, Er, Tm, Yb and mixtures thereof, formed on the substrate. The units are arranged in a row or in a matrix such that the superconductive layers of respective units are superconductively joined with each other.

Abstract: A bulk superconductor is produced by subjecting REBa.sub.2 Cu.sub.3 O.sub.y oxide to oxygen annealing after many holes have been formed in the oxide body.

Abstract: A composite material having a plurality of sections integrated into a unitary structure and each including a bulk of a superconductive metal oxide of RE--Ba--Cu--O wherein RE represents a rare earth element, the bulk of each of the sections having pinning centers and capable of trapping a magnetic field. A first one of the sections has a superconductive current density different from that of a second one of the sections. The composite material may be produced by assembling preformed respective sections into a unitary structure or by immersing one of the sections in a solution to grow crystal of Y--Ba--Cu--O superconductive on that section, followed by trimming.

Abstract: A high critical temperature and high critical current density superconductor is disclosed which contains a metal oxide expressed by the following formula (I):(R.sup.1.sub.1-x, Ba.sub.x)Ba.sub.2 Cu.sub.3 O.sub.d (I)wherein R.sup.1 stands for at least one element selected from the group consisting of La, Nd, Sm, Eu and Gd, x is a number greater than 0 but not greater than 0.5 and d is a number between 6.2 and 7.2. Fine phases of RE211, RE422 and/or a metal oxide expressed by the formula (R.sup.2.sub.1-z, Ba.sub.z) (Ba.sub.1-y, R.sup.2.sub.y).sub.2 Cu.sub.3 O.sub.p (R.sup.2 =La, Nd, Sm, Eu or Gd) may be dispersed in a matrix of the matrix phase of the formula (I). The above superconductor may be obtained by cooling a melt having a temperature of 1,000.degree.-1,300.degree. C. and containing R.sup.1, Ba, Cu and O at a cooling rate of 5.degree. C./hour or less under a partial pressure of oxygen of between 0.00001 and 0.05 atm, followed by annealing at 250.degree.-600.degree. C. in an oxygen atmosphere.

Abstract: A composite magnet comprising a core of R-Ba-Cu-O type bulk superconductor (R denotes rare-earth elements) made by melt process, enclosed around it with normal conductive or superconductive coil, or a composite magnet including a center of normal conductive or superconductive coil, enclosed around it with ring-shaped R-Ba-Cu-O type bulk superconductor (R denotes rare-earth elements) made by melt process is disclosed, which allows easy control of generating magnetic field and gives a relatively strong magnetic field even at a temperature as high as that of liquid nitrogen.

Abstract: A high critical temperature and high critical current density superconductor is disclosed which contains a metal oxide expressed by the following formula (I):(R.sup.1.sub.1-x,Ba.sub.x)Ba.sub.2 Cu.sub.3 O.sub.d (I)wherein R.sup.1 stands for at least one element selected from the group consisting of La, Nd, Sm, Eu and Gd, x is a number greater than 0 but not greater than 0.5 and d is a number between 6.2 and 7.2. Fine phases of RE211, RE422 and/or a metal oxide expressed by the formula (R.sup.2.sub.1-z, Ba.sub.z) (Ba.sub.1-y, R.sup.2.sub.y).sub.2 Cu.sub.3 O.sub.p (R.sup.2 =La, Nd, Sm, Eu or Gd) may be dispersed in a matrix of the matrix phase of the formula (I). The above superconductor may be obtained by cooling a melt having a temperature of 1,000.degree.-1,300.degree. C. and containing R.sup.1, Ba, Cu and O at a cooling rate of 5.degree. C./hour or less under a partial pressure of oxygen of between 0.00001 and 0.05 atm, followed by annealing at 250.degree.-600.degree. C. in an oxygen atmosphere.

Abstract: Disclosed is a method of joining Y-based oxide superconductors on joining two or more Y-based oxide superconductors made by melting process under pressure, characterized by incorporating REBa.sub.2 Cu.sub.3 O.sub.7-.delta. (RE=Y, Ho, Er, Tm or Yb), Ag and BaCuO.sub.2 -CuO type composition to the joining interface as an adhesive phase for joining. It becomes possible to easily make a joined material that does not deteriorate the superconductive characteristic at joined interface.

Abstract: To ensure a well-oriented crystal structure, there is provided a process of producing an oxide superconductor of a Y--Ba--Cu--O system with a composition having an atomic ratio Y:Ba:Cu of 1.0-2.0:2.0-2.5:3.0-3.5, the process comprising the steps of: preparing a semimelt including solid and liquid phases and consisting of Y, Ba, Cu and O in the atomic ratio; and solidifying the semimelt to form the oxide superconductor by so controlling a moving speed of a solidification front to have two components of different values in two perpendicularly intersecting directions.

Abstract: A laminated silicon oxide film capacitor including a conductive or semiconductive silicon substrate and, formed on the substrate surface, at least one laminated film comprising a silicon oxide layer and an electrode layer laminated one on the other, and electrodes.

Abstract: An actuator of the present invention is composed of a monomorph-type piezoelectric ceramic. The monomorph-type piezoelectric ceramic is a BaTiO.sub.3 -based ceramic, a PZT based ceramic having Nb, Sb, La, Mn, Nd and Bi, BaTiO.sub.3 --SrTiO.sub.3 -based ceramic containing SrTiO.sub.3 by 20 to 35 mole %, K(Nb, Ta)O.sub.3 -based ceramic, or a ceramic represented by a general formula: [Pb, (A.sub.1/2 B.sub.1/2)](Zr.sub.1-n, Cn)O.sub.3 where A is a monovalent element such as Li, Na, K, Rb, Cs or the like, B is a trivalent element such as Bi, La, Y, Sb, Ga or the like, A and B being both replaceable solid-meltable elements for Pb, C is an element such as Ti, Sn or the like that is a replaceable solid-meltable element for Zr, and n is from 0 to 0.8.

Abstract: Disclosed is a process for the preparation of high .alpha.-type silicon nitride powder, wherein a nitrogen-containing silane compound and/or amorphous silicon nitride is crystallized to form crystalline silicon nitride. In this process, crystalline silicon nitride having a particle size not larger than 0.05 .mu.m is incorporated in an amount of at least 0.1% by weight into the nitrogen-containing silane compound and/or amorphous silicon nitride, the mixture is formed into a power or molded body having a powder bulk density of at least 0.1 g/cm.sup.3 as silicon, and the powder or molded body is heated to 1,350.degree. to 1,700.degree. C. while controlling the temperature-elevating rate to at least 15.degree. C./min throughout the temperature range of from 1,200.degree. to 1,350.degree. C. The resulting high .alpha.-type silicon nitride is composed of a fine granular crystal and the does not contain a needle crystal or columnar crystal.