Abstract: A package is adapted to a thermoelectric module in which a plurality of thermoelectric elements is electrically connected in series and aligned between a lower electrode and an upper electrode and is constituted of a metal frame and a metal base which is a metal plate having good thermal conductivity composed of copper, aluminum, silver, or alloy. The metal frame is bonded onto the periphery of the metal base via a low melting point solder whose melting point is lower than that of the solder used for forming the thermoelectric module. The thermoelectric module is circumscribed by the metal frame so that the lower electrode thereof is attached onto the metal base via an insulating resin layer.

Abstract: An optical device is broken down into an optical element made of optical crystal and a holder made of alloy approximated in thermal expansion coefficient to the optical crystal, and the optical element is soldered to or melt bonded to the holder with a piece of solder or glass; the joint area is spaced from the periphery of the optical crystal so that a buffer area, which is spaced from the periphery, is created between the periphery and the joint area; even if cracks and/or scratches have been occurred in an end surface of the optical element, thermal stress is less influential in growing the scratches by virtue of the buffer area, and the optical device keeps the design optical characteristics.

Abstract: In order to realize a magnetic resistance device having a high magnetic resistance change rate, satisfactory production yield and a low level of variation in production, a pair of magnetic tunnel resistance devices 2 employing a laminated structure comprised of antiferromagnetic film 8, lower magnetic layer 9, barrier film 10 and upper magnetic layer 11 are independently and separately formed by ion beam etching on a lower electrode 3 and in common with said lower electrode 3 provided on a substrate 5. A pair of independent upper electrodes 4 are formed on upper magnetic layer 11. As a result, a pair of magnetic tunnel resistance devices 2 are formed connected in series on substrate 5.

Abstract: An optical device is broken down into an optical element made of optical crystal and a holder made of alloy approximated in thermal expansion coefficient to the optical crystal, and the optical element is soldered to or melt bonded to the holder with a piece of solder or glass; the joint area is spaced from the periphery of the optical crystal so that a buffer area, which is spaced from the periphery, is created between the periphery and the joint area; even if cracks and/or scratches have been occurred in an end surface of the optical element, thermal stress is less influential in growing the scratches by virtue of the buffer area, and the optical device.

Abstract: An optical device is broken down into an optical element made of optical crystal and a holder made of alloy approximated in thermal expansion coefficient to the optical crystal, and the optical element is soldered to or melt bonded to the holder with a piece of solder or glass; the joint area is spaced from the periphery of the optical crystal so that a buffer area, which is spaced from the periphery, is created between the periphery and the joint area; even if cracks and/ or scratches have been occurred in an end surface of the optical element, thermal stress is less influential in growing the scratches by virtue of the buffer area, and the optical device

Abstract: An optical device is broken down into an optical element made of optical crystal and a holder made of alloy approximated in thermal expansion coefficient to the optical crystal, and the optical element is soldered to or melt bonded to the holder with a piece of solder or glass; the joint area is spaced from the periphery of the optical crystal so that a buffer area, which is spaced from the periphery, is created between the periphery and the joint area; even if cracks and/or scratches have been occurred in an end surface of the optical element, thermal stress is less influential in growing the scratches by virtue of the buffer area, and the optical device keeps the design optical characteristics.

Abstract: In order to realize a magnetic resistance device having a high magnetic resistance change rate, satisfactory production yield and a low level of variation in production, a pair of magnetic tunnel resistance devices 2 employing a laminated structure comprised of antiferromagnetic film 8, lower magnetic layer 9, barrier film 10 and upper magnetic layer 11 are independently and separately formed by ion beam etching on a lower electrode 3 and in common with said lower electrode 3 provided on a substrate 5. A pair of independent upper electrodes 4 are formed on upper magnetic layer 11. As a result, a pair of magnetic tunnel resistance devices 2 are formed connected in series on substrate 5.

Abstract: A granule-type magnetoresistive material is used to form a MR component, which is equipped in a magnetic head, or the like. When placing the magnetoresistive material in the external magnetic field, the electric resistance is altered responsive to a variation of the external magnetic field. In order to increase a magnetic-field sensitivity, the magnetoresistive material is composed of an alloy whose atomic composition is expressed by a chemical formula of (Co.sub.1-x Fe.sub.x).sub.y Ag.sub.1-y, where 0.45.ltoreq.x.ltoreq.0.55 and 0.24.ltoreq.y.ltoreq.0.35; or another chemical formula of (Co.sub.1-x Fe.sub.x).sub.y (Ag.sub.1-z Cu.sub.z).sub.1-y, where 0.45.ltoreq.x.ltoreq.0.55, 0.24.ltoreq.y.ltoreq.0.35 and z.ltoreq.0.14.

Abstract: Significant improvement in corrosion resistance of a magnetooptic material for electric and electronic applications is achieved by a composition (RE.sub.a, TM.sub.b)1-c-.sub.d M.sub.c Be.sub.d of specified content ratios of the components, typically a Tb-Fe-Co type alloy with combined addition of M and Be.