Abstract: A method for joining high-purity ceramic parts useful as parts for semi-conductor production apparatus, in particular, ceramic jigs used in the production of semi-conductors. Two related joining methods are described. First, high purity ceramic parts made of silicon carbide are placed in contact with each other and a layer of silicon carbide is coated around the two SiC pieces by chemical vapor deposition (CVD). This vapor deposited coating serves to bind the parts tightly together. In a second procedure, the ceramic elements are placed next to each other at a spaced distance, preferably from 10–1,000 um. The space between the two ceramic elements is filled with SiC using a vapor deposition (CVD) technique. The resultant structure is such that the outer layers of the ceramic elements are continuously integrated with each other via SiC the ceramic material vapor deposited in the space. Combinations of the first and second procedures are taught.

Abstract: The present invention has an object to provide a joining method, whereby high-purity ceramic parts can be simply joined, a high strength joint durable even under a high temperature environment, is possible, and the method is applicable also to a complex shape.

Abstract: The components, of a microwave circuit, such as a filter, and a solid oscillator, etc. consists of a dielectric ceramic composition. A known BaO-TiO.sub.2 compound exhibits properties which make it suitable for use as the components of a microwave circuit but the resonance frequency linearity and the resonance frequency temperature coefficient are not excellent. The dielectric ceramic composition of the present invention is expressed by the formula of BaO.x{(1-y)TiO.sub.2.ySnO.sub.2 }, wherein x is 4.4 moles and y is from 0.06 to 0.09 mole, and has a mixed crystal structure of Ba(Ti.Sn).sub.4 O.sub.9 and Ba.sub.2 (Ti.Sn).sub.9 O.sub.20.