Patents by Inventor Naotaka Kamishita

Naotaka Kamishita has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8309414
    Abstract: A first transistor includes a first gate insulating film, a first gate electrode, and a first sidewall. A second transistor includes a second gate insulating film, a second gate electrode, and a second sidewall. A capacitive element is connected to one side of source and drain regions of the second transistor. The first gate insulating film has the same thickness as that of the second gate insulating film, and the first gate electrode has the same thickness of that of the second gate electrode. The width of the second sidewall is larger than the width of the first sidewall.
    Type: Grant
    Filed: July 22, 2010
    Date of Patent: November 13, 2012
    Assignee: Renesas Electronics Corporation
    Inventors: Toru Kawasaki, Satoshi Kura, Mitsuo Nissa, Naotaka Kamishita
  • Publication number: 20110042749
    Abstract: A first transistor includes a first gate insulating film, a first gate electrode, and a first sidewall. A second transistor includes a second gate insulating film, a second gate electrode, and a second sidewall. A capacitive element is connected to one side of source and drain regions of the second transistor. The first gate insulating film has the same thickness as that of the second gate insulating film, and the first gate electrode has the same thickness of that of the second gate electrode. The width of the second sidewall is larger than the width of the first sidewall.
    Type: Application
    Filed: July 22, 2010
    Publication date: February 24, 2011
    Applicant: Renesas Electronics Corporation
    Inventors: Toru Kawasaki, Satoshi Kura, Mitsuo Nissa, Naotaka Kamishita