Patents by Inventor Naoto Fukuta

Naoto Fukuta has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Power system control apparatus and power system control method
    Patent number: 6188205
    Abstract: A desired value of reactive power flow between a to-be-controlled power system and an adjoining power system is determined according to measured values of the reactive power flow and an effective power flow and desired voltage values of the to-be-controlled power system and of the adjoining power system. Thereafter, a required value of a reactive power of the to-be-controlled power system is calculated according to the desired value of the reactive power flow, the measured values of the reactive power flow and the effective power flow, and the desired voltage value and a measured voltage value in the to-be-controlled power system. Thereafter, a control apparatus having an electric capacity near to the required value of the reactive power is selected from control apparatus arranged in the to-be-controlled power system to make the selected control apparatus adjust a voltage of the to-be-controlled power system.
    Type: Grant
    Filed: March 8, 2000
    Date of Patent: February 13, 2001
    Assignees: Mitsubishi Denki Kabushiki Kaisha, The Kansai Electric Power Co., Inc.
    Inventors: Masahiko Tanimoto, Yoshio Izui, Yasuyuki Kowada, Kenji Iba, Naoto Fukuta, Kenichi Deno, Tetsuo Sasaki
  • Liquid crystal device including tantalum nitride with specific nitriding ratio
    Patent number: 5164850
    Abstract: A metal-insulator-metal substrate for a liquid crystal display device including an insulating substrate; a first conductor layer of tantalum nitride formed on a region of the insulating substrate; an insulator layer formed to cover at least a portion of the first conductor layer; a second conductor layer formed to cover at least a portion of the insulator layer; and a pixel element formed on another region of the insulating substrate and connected to the second conductor layer, one of the conductor layers having a nitriding ratio in the range of 0.05 to 0.14 or being formed of sublayers having different nitriding ratios.
    Type: Grant
    Filed: January 23, 1991
    Date of Patent: November 17, 1992
    Assignees: Sanyo Electric Co., Ltd., Tottori Sanyo Electric Co., Ltd.
    Inventors: Toshihiko Tanaka, Naoto Fukuta, Shouji Nakanishi, Hiroshi Inamura, Takao Yamauchi