Patents by Inventor Naoto GOTO

Naoto GOTO has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • SEMICONDUCTOR DEVICE
    Publication number: 20150187819
    Abstract: A semiconductor device having a high aperture ratio and including a capacitor capable of increasing the charge capacity is provided. A semiconductor device includes a transistor over a substrate, a first light-transmitting conductive film over the substrate, an oxide insulating film covering the transistor and having an opening over the first light-transmitting conductive film, a nitride insulating film over the oxide insulating film and in contact with the first light-transmitting conductive film in the opening, a second light-transmitting conductive film connected to the transistor and having a depressed portion in the opening, and an organic resin film with which the depressed portion of the second light-transmitting conductive film is filled.
    Type: Application
    Filed: March 12, 2015
    Publication date: July 2, 2015
    Inventors: Daisuke KUBOTA, Ryo HATSUMI, Masami JINTYOU, Takumi SHIGENOBU, Naoto GOTO
  • Semiconductor device
    Patent number: 8981374
    Abstract: A semiconductor device having a high aperture ratio and including a capacitor capable of increasing the charge capacity is provided. A semiconductor device includes a transistor over a substrate, a first light-transmitting conductive film over the substrate, an oxide insulating film covering the transistor and having an opening over the first light-transmitting conductive film, a nitride insulating film over the oxide insulating film and in contact with the first light-transmitting conductive film in the opening, a second light-transmitting conductive film connected to the transistor and having a depressed portion in the opening, and an organic resin film with which the depressed portion of the second light-transmitting conductive film is filled.
    Type: Grant
    Filed: January 23, 2014
    Date of Patent: March 17, 2015
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Daisuke Kubota, Ryo Hatsumi, Masami Jintyou, Takumi Shigenobu, Naoto Goto
  • SEMICONDUCTOR DEVICE
    Publication number: 20140209897
    Abstract: A semiconductor device having a high aperture ratio and including a capacitor capable of increasing the charge capacity is provided. A semiconductor device includes a transistor over a substrate, a first light-transmitting conductive film over the substrate, an oxide insulating film covering the transistor and having an opening over the first light-transmitting conductive film, a nitride insulating film over the oxide insulating film and in contact with the first light-transmitting conductive film in the opening, a second light-transmitting conductive film connected to the transistor and having a depressed portion in the opening, and an organic resin film with which the depressed portion of the second light-transmitting conductive film is filled.
    Type: Application
    Filed: January 23, 2014
    Publication date: July 31, 2014
    Applicant: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Daisuke KUBOTA, Ryo HATSUMI, Masami JINTYOU, Takumi SHIGENOBU, Naoto GOTO