Patents by Inventor Naoto Ishibashi

Naoto Ishibashi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11107449
    Abstract: A electronic portable keyboard instrument includes a plurality of keys arranged in a first direction; a plurality of hammers respectively corresponding to the plurality of keys, each of the plurality of hammers including a force application point that is formed on one end side and that is pressed down when the corresponding key is pressed, a weight that is formed on another end side and imparts action weight to a pressed key, and a fulcrum formed between the force application point and the weight so that the hammer rocks in vertical directions about the fulcrum when the corresponding key is pressed; and a casing including at least one reinforcing member that is formed in a gap between the plurality of hammers so as to not be contacted by the weights of the hammers when the hammers rock about the respective fulcrums with a lateral positional shift in the first direction.
    Type: Grant
    Filed: October 4, 2019
    Date of Patent: August 31, 2021
    Assignee: CASIO COMPUTER CO., LTD.
    Inventors: So Sato, Naoya Ishibashi, Kouji Oshima, Naoto Imamura
  • Patent number: 11107892
    Abstract: A method for producing a SiC epitaxial wafer according to the present embodiment includes: an epitaxial growth step of growing the epitaxial layer on the SiC single crystal substrate by feeding an Si-based raw material gas, a C-based raw material gas, and a gas including a Cl element to a surface of a SiC single crystal substrate, in which the epitaxial growth step is performed under growth conditions that a film deposition pressure is 30 torr or less, a Cl/Si ratio is in a range of 8 to 12, a C/Si ratio is in a range of 0.8 to 1.2, and a growth rate is 50 ?m/h or more from an initial growth stage.
    Type: Grant
    Filed: April 19, 2018
    Date of Patent: August 31, 2021
    Assignees: SHOWA DENKO K.K., Central Research Institute Of Electric Power Industry, DENSO CORPORATION
    Inventors: Keisuke Fukada, Naoto Ishibashi, Akira Bando, Masahiko Ito, Isaho Kamata, Hidekazu Tsuchida, Kazukuni Hara, Masami Naito, Hideyuki Uehigashi, Hiroaki Fujibayashi, Hirofumi Aoki, Toshikazu Sugiura, Katsumi Suzuki
  • Publication number: 20210217648
    Abstract: A susceptor which is used in a chemical vapor deposition apparatus for growing an epitaxial layer on a principal plane of a wafer by a chemical vapor deposition method, and which includes a base; and three protrusion parts that are disposed on an outer circumferential part of the base and support an outer circumferential part of the wafer, is provided.
    Type: Application
    Filed: March 24, 2021
    Publication date: July 15, 2021
    Applicant: SHOWA DENKO K.K.
    Inventors: Jia Yu, Naoto Ishibashi, Keisuke Fukada, Yoshikazu Umeta, Hironori Atsumi
  • Publication number: 20210066113
    Abstract: A susceptor (1) of the present invention is a susceptor that is configured to hold a wafer in a CVD apparatus that forms a layer on a wafer through chemical vapor deposition, and includes an external susceptor (2) and an internal susceptor (1). The external susceptor (2) has an opening (2c) that accommodates the internal susceptor (1) in a coupling manner and has a wafer placement surface (2a) on which an outer peripheral portion (Ws) of a wafer is placed. The internal susceptor (1) includes a projection portion (1a) on a surface (1b) facing the wafer (W), and a height (h) of the projection portion (1a) is a height at which the projection portion does not come into contact with the wafer (W) when the wafer (W) is placed on the susceptor.
    Type: Application
    Filed: June 22, 2018
    Publication date: March 4, 2021
    Applicant: SHOWA DENKO K.K.
    Inventors: Yoshikazu UMETA, Keisuke FUKADA, Naoto ISHIBASHI, Hironori ATSUMI
  • Publication number: 20200118849
    Abstract: According to an aspect of the present invention, there is provided a deposition apparatus including: a reaction space which is a reaction chamber; a front chamber for deposition; a raw material supply port that is configured to supply a raw material to the reaction space; an opening for measuring a temperature of a wafer mounted on a wafer mounting surface of a mounting stage disposed in the reaction space; and a partition plate that partitions the reaction space and the front chamber for deposition, in which the raw material supply port is positioned on the same plane as the partition plate or on the reaction space side from the partition plate, and the opening is positioned in the front chamber for deposition side from the partition plate.
    Type: Application
    Filed: May 9, 2018
    Publication date: April 16, 2020
    Applicant: SHOWA DENKO K.K.
    Inventors: Keisuke FUKADA, Naoto ISHIBASHI, Hironori ATSUMI
  • Publication number: 20200083330
    Abstract: A method for producing a SiC epitaxial wafer according to the present embodiment includes: an epitaxial growth step of growing the epitaxial layer on the SiC single crystal substrate by feeding an Si-based raw material gas, a C-based raw material gas, and a gas including a Cl element to a surface of a SiC single crystal substrate, in which the epitaxial growth step is performed under growth conditions that a film deposition pressure is 30 torr or less, a Cl/Si ratio is in a range of 8 to 12, a C/Si ratio is in a range of 0.8 to 1.2, and a growth rate is 50 ?m/h or more from an initial growth stage.
    Type: Application
    Filed: April 19, 2018
    Publication date: March 12, 2020
    Applicants: SHOWA DENKO K.K., Central Research Institute of Electric Power Industry, DENSO CORPORATION
    Inventors: Keisuke FUKADA, Naoto ISHIBASHI, Akira BANDO, Masahiko ITO, Isaho KAMATA, Hidekazu TSUCHIDA, Kazukuni HARA, Masami NAITO, Hideyuki UEHIGASHI, Hiroaki FUJIBAYASHI, Hirofumi AOKI, Toshikazu SUGIURA, Katsumi SUZUKI
  • Publication number: 20200083085
    Abstract: A susceptor which is used in a chemical vapor deposition apparatus for growing an epitaxial layer on a principal plane of a wafer by a chemical vapor deposition method, and which includes a base; and three protrusion parts that are disposed on an outer circumferential part of the base and support an outer circumferential part of the wafer, is provided.
    Type: Application
    Filed: September 4, 2019
    Publication date: March 12, 2020
    Applicant: SHOWA DENKO K.K.
    Inventors: Jia YU, Naoto ISHIBASHI, Keisuke FUKADA, Yoshikazu UMETA, Hironori ATSUMI
  • Publication number: 20190376206
    Abstract: This SiC epitaxial wafer includes: a SiC single crystal substrate of which a main surface has an off-angle of 0.4° to 5° with respect to (0001) plane; and an epitaxial layer provided on the SiC single crystal substrate, wherein the epitaxial layer has a basal plane dislocation density of 0.1 pieces/cm2 or less that is a density of basal plane dislocations extending from the SiC single crystal substrate to an outer surface and an intrinsic 3C triangular defect density of 0.1 pieces/cm2 or less.
    Type: Application
    Filed: December 25, 2017
    Publication date: December 12, 2019
    Applicants: SHOWA DENKO K.K, Central Research Institute of Electric Power Industry, DENSO CORPORATION
    Inventors: Keisuke FUKADA, Naoto ISHIBASHI, Akira BANDO, Masahiko ITO, Isaho KAMATA, Hidekazu TSUCHIDA, Kazukuni HARA, Masami NAITO, Hideyuki UEHIGASHI, Hiroaki FUJIBAYASHI, Hirofumi AOKI, Toshikazu SUGIURA, Katsumi SUZUKI
  • Publication number: 20190316273
    Abstract: A method of producing a p-type SiC epitaxial wafer, the method including: a step of setting an input raw material C/Si ratio, being a ratio between the C element and the Si element in a feedstock gas; and a step of obtaining a p-type SiC epitaxial wafer having an Al dopant concentration of at least 1×1018 cm?3 by forming a p-type SiC epitaxial film on a substrate in a film-forming atmosphere comprising the feedstock gas, a Cl-based gas containing Cl in the molecule, and a dopant gas containing Al and C in the molecule, wherein the input raw material C/Si ratio is set based on a total gas C/Si ratio, being a ratio between the C element and the Si element in the film-forming atmosphere containing the C element included in the dopant gas, the input raw material C/Si ratio differs from the total gas C/Si ratio, and the input raw material C/Si ratio is 0.8 or less.
    Type: Application
    Filed: December 11, 2017
    Publication date: October 17, 2019
    Applicant: SHOWA DENKO K.K.
    Inventors: Naoto ISHIBASHI, Keisuke FUKADA, Akira BANDOH
  • Publication number: 20190169742
    Abstract: This gas piping system is a run-vent mode gas piping system in which, the gas piping system including a plurality of supply lines through which plural gases are fed individually, an exhaust line that leads from a reactor to an exhaust pump, a run line having one or plural pipes which respectively branch from the plural supply lines, plural vent lines which respectively branch from the supply lines and are connected to the exhaust line, and plural valves which are respectively provided at the branch points of the plural supply lines, and switches between feeding a gas to the run line side and feeding a gas to the vent line side, wherein the plural vent lines are separated from each other until the vent lines reach the exhaust line, and the inner diameter of the exhaust line is greater than the inner diameter of the plural vent lines.
    Type: Application
    Filed: June 12, 2017
    Publication date: June 6, 2019
    Applicant: SHOWA DENKO K.K.
    Inventors: Naoto ISHIBASHI, Keisuke FUKADA, Tomoya UTASHIRO, Akira BANDO
  • Publication number: 20190144995
    Abstract: A chemical vapor deposition apparatus is provided which comprises a reaction furnace in which vapor deposition is performed and an exhaust pipe which discharges a gas from an interior of the reaction furnace, wherein the exhaust pipe includes at least one of a bending part, and the bending part includes at least one of a pipe-extension part, and the pipe-extension part extends from the bending part and has a storage space in the pipe-extension part.
    Type: Application
    Filed: October 31, 2018
    Publication date: May 16, 2019
    Applicant: SHOWA DENKO K.K.
    Inventors: Naoto ISHIBASHI, Keisuke FUKADA, Yoshikazu UMETA, Tomohiro KODAMA
  • Publication number: 20190148496
    Abstract: An SiC epitaxial wafer according to the present invention includes: an SiC single crystal substrate; and a carrier concentration variation layer disposed on one face side of the SiC single crystal substrate, wherein the carrier concentration variation layer includes: high concentration layers in which carrier concentrations thereof are higher than carrier concentrations of adjacent layers; and low concentration layers in which carrier concentrations are lower than in adjacent layers, and the high concentration layers and the low concentration layers are laminated alternately.
    Type: Application
    Filed: October 5, 2018
    Publication date: May 16, 2019
    Applicant: SHOWA DENKO K.K.
    Inventors: Naoto ISHIBASHI, Keisuke FUKADA
  • Publication number: 20180371640
    Abstract: A wafer supporting mechanism including: a wafer supporting table; and a movable part supported by the wafer supporting table, wherein the wafer supporting table includes a wafer supporting portion for transfer that stands up from a first surface opposing a back surface of a wafer to be placed and is provided further toward an inner side than an outer peripheral edge of the wafer to be placed, and the movable part includes a wafer supporting portion for film formation that is positioned further toward an outer peripheral side of the wafer to be placed than the wafer supporting portion for transfer and is relatively movable with respect to the wafer supporting table in a standing direction of the wafer supporting portion for transfer.
    Type: Application
    Filed: December 12, 2016
    Publication date: December 27, 2018
    Applicant: SHOWA DENKO K.K.
    Inventors: Jia YU, Naoto ISHIBASHI, Keisuke FUKADA, Tomoya UTASHIRO, Hironori ATSUMI
  • Publication number: 20160227822
    Abstract: The present invention provides a food composition that makes it possible to effectively conduct mastication and swallowing training. The food composition contains a starch, a gelling agent, a paste, and water, the amount of the water contained in the composition being 65 wt % or more and less than 90 wt %, the total amount of the starch, the gelling agent, the paste, and the water being 85 to 100 wt %, the composition having a fracture stress of 20,000 to 70,000 N/m2.
    Type: Application
    Filed: June 12, 2014
    Publication date: August 11, 2016
    Applicant: OTSUKA PHARMACEUTICAL FACTORY, INC.
    Inventors: Kazumi Abe, Naoto Ishibashi
  • Patent number: 8673976
    Abstract: A medicament for prophylactic and/or therapeutic treatment of hepatic steatosis or non-alcoholic steatohepatitis, which comprises a polyprenyl compound (e.g., 3,7,11,15-tetramethyl-2,4,6,10,14-hexadecapentaenoic acid) as an active ingredient.
    Type: Grant
    Filed: June 15, 2012
    Date of Patent: March 18, 2014
    Assignee: Kowa Company, Ltd.
    Inventors: Yuji Yoshikawa, Megumi Yamamoto, Naoto Ishibashi, Mami Seki
  • Patent number: 8455546
    Abstract: A medicament for promoting proliferation of hepatocytes and liver regeneration, which comprises a polyprenyl compound such as 3,7,11,15-tetramethyl-2,4,6,10,14-hexadecapentaenoic acid as an active ingredient.
    Type: Grant
    Filed: May 4, 2012
    Date of Patent: June 4, 2013
    Assignees: Josai University Educational Corporation, Kowa Company, Ltd.
    Inventors: Masahiko Ogihara, Mitsutoshi Kimura, Naoto Ishibashi, Jun Kojima
  • Publication number: 20120259015
    Abstract: A medicament for prophylactic and/or therapeutic treatment of hepatic steatosis or non-alcoholic steatohepatitis, which comprises a polyprenyl compound (e.g., 3,7,11,15-tetramethyl-2,4,6,10,14-hexadecapentaenoic acid) as an active ingredient.
    Type: Application
    Filed: June 15, 2012
    Publication date: October 11, 2012
    Applicant: KOWA COMPANY, LTD.
    Inventors: Yuji YOSHIKAWA, Megumi YAMAMOTO, Naoto ISHIBASHI, Mami SEKI
  • Publication number: 20120220659
    Abstract: A medicament for promoting proliferation of hepatocytes and liver regeneration, which comprises a polyprenyl compound such as 3,7,11,15-tetramethyl-2,4,6,10,14-hexadecapentaenoic acid as an active ingredient.
    Type: Application
    Filed: May 4, 2012
    Publication date: August 30, 2012
    Applicants: KOWA COMPANY, LTD., JOSAI UNIVERSITY EDUCATIONAL CORPORATION
    Inventors: Masahiko OGIHARA, Mitsutoshi KIMURA, Naoto ISHIBASHI, Jun KOJIMA
  • Patent number: 8017652
    Abstract: Activators of peroxisome proliferator-activated receptors comprising a polyprenyl compound, preferably (2E,4E,6E,10E)-3,7,11,15-tetramethyl-2,4,6,10,14 -hexadecapentaenoic acid, as an active ingredient, and medicaments for preventive and/or therapeutic treatment of hyperlipidemia, non-insulin dependent diabetes mellitus or the like comprising a polyprenyl compound as an active ingredient.
    Type: Grant
    Filed: May 8, 2009
    Date of Patent: September 13, 2011
    Assignees: Kowa Company Ltd., Nagasaki Prefectural and Municipal Universities Corporation
    Inventors: Yoshihiro Shidoji, Naoto Ishibashi
  • Publication number: 20100184859
    Abstract: A medicament for promoting proliferation of hepatocytes and liver regeneration, which comprises a polyprenyl compound such as 3,7,11,15-tetramethyl-2,4,6,10,14-hexadecapentaenoic acid as an active ingredient.
    Type: Application
    Filed: June 20, 2008
    Publication date: July 22, 2010
    Applicants: JOSAI UNIVERSITY EDUCATIONAL CORPORATION, KOWA COMPANY, LTD.
    Inventors: Masahiko Ogihara, Mitsutoshi Kimura, Naoto Ishibashi, Jun Kojima