Patents by Inventor Naoto Ishibashi
Naoto Ishibashi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11600538Abstract: A SiC epitaxial wafer according to an embodiment includes: a SiC substrate; and a SiC epitaxial layer formed on a first surface of the SiC substrate. The in-plane uniformity of a density of Z1/2 centers of the SiC epitaxial layer is 5% or less.Type: GrantFiled: November 24, 2021Date of Patent: March 7, 2023Assignee: SHOWA DENKO K.K.Inventors: Naoto Ishibashi, Koichi Murata, Hidekazu Tsuchida
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Patent number: 11478009Abstract: The present invention provides a food composition that makes it possible to effectively conduct mastication and swallowing training. The food composition contains a starch, a gelling agent, a paste, and water, the amount of the water contained in the composition being 65 wt % or more and less than 90 wt %, the total amount of the starch, the gelling agent, the paste, and the water being 85 to 100 wt %, the composition having a fracture stress of 20,000 to 70,000 N/m2.Type: GrantFiled: June 12, 2014Date of Patent: October 25, 2022Assignee: OTSUKA PHARMACEUTICAL FACTORY, INC.Inventors: Kazumi Abe, Naoto Ishibashi
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Patent number: 11427929Abstract: A wafer supporting mechanism including: a wafer supporting table; and a movable part supported by the wafer supporting table, wherein the wafer supporting table includes a wafer supporting portion for transfer that stands up from a first surface opposing a back surface of a wafer to be placed and is provided further toward an inner side than an outer peripheral edge of the wafer to be placed, and the movable part includes a wafer supporting portion for film formation that is positioned further toward an outer peripheral side of the wafer to be placed than the wafer supporting portion for transfer and is relatively movable with respect to the wafer supporting table in a standing direction of the wafer supporting portion for transfer.Type: GrantFiled: December 12, 2016Date of Patent: August 30, 2022Assignee: SHOWA DENKO K.K.Inventors: Jia Yu, Naoto Ishibashi, Keisuke Fukada, Tomoya Utashiro, Hironori Atsumi
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Patent number: 11424147Abstract: According to an aspect of the present invention, there is provided a deposition apparatus including: a reaction space which is a reaction chamber; a front chamber for deposition; a raw material supply port that is configured to supply a raw material to the reaction space; an opening for measuring a temperature of a wafer mounted on a wafer mounting surface of a mounting stage disposed in the reaction space; and a partition plate that partitions the reaction space and the front chamber for deposition, in which the raw material supply port is positioned on the same plane as the partition plate or on the reaction space side from the partition plate, and the opening is positioned in the front chamber for deposition side from the partition plate.Type: GrantFiled: May 9, 2018Date of Patent: August 23, 2022Assignee: SHOWA DENKO K.K.Inventors: Keisuke Fukada, Naoto Ishibashi, Hironori Atsumi
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Publication number: 20220173001Abstract: A SiC epitaxial wafer according to an embodiment includes: a SiC substrate; and a SiC epitaxial layer formed on a first surface of the SiC substrate. The in-plane uniformity of a density of Z1/2 centers of the SiC epitaxial layer is 5% or less.Type: ApplicationFiled: November 24, 2021Publication date: June 2, 2022Applicant: Showa Denko K.K.Inventors: Naoto ISHIBASHI, Koichi MURATA, Hidekazu TSUCHIDA
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Publication number: 20220149160Abstract: A SiC epitaxial wafer of the present invention includes a SiC single crystal substrate, and a high concentration layer that is provided on the SiC single crystal substrate and has an average value of an n-type doping concentration of 1×1018/cm3 or more and 1×1019/cm3 or less, and in-plane uniformity of the doping concentration of 30% or less.Type: ApplicationFiled: November 10, 2021Publication date: May 12, 2022Applicant: SHOWA DENKO K.K.Inventors: Naoto Ishibashi, Keisuke Fukada
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Patent number: 11107892Abstract: A method for producing a SiC epitaxial wafer according to the present embodiment includes: an epitaxial growth step of growing the epitaxial layer on the SiC single crystal substrate by feeding an Si-based raw material gas, a C-based raw material gas, and a gas including a Cl element to a surface of a SiC single crystal substrate, in which the epitaxial growth step is performed under growth conditions that a film deposition pressure is 30 torr or less, a Cl/Si ratio is in a range of 8 to 12, a C/Si ratio is in a range of 0.8 to 1.2, and a growth rate is 50 ?m/h or more from an initial growth stage.Type: GrantFiled: April 19, 2018Date of Patent: August 31, 2021Assignees: SHOWA DENKO K.K., Central Research Institute Of Electric Power Industry, DENSO CORPORATIONInventors: Keisuke Fukada, Naoto Ishibashi, Akira Bando, Masahiko Ito, Isaho Kamata, Hidekazu Tsuchida, Kazukuni Hara, Masami Naito, Hideyuki Uehigashi, Hiroaki Fujibayashi, Hirofumi Aoki, Toshikazu Sugiura, Katsumi Suzuki
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Publication number: 20210217648Abstract: A susceptor which is used in a chemical vapor deposition apparatus for growing an epitaxial layer on a principal plane of a wafer by a chemical vapor deposition method, and which includes a base; and three protrusion parts that are disposed on an outer circumferential part of the base and support an outer circumferential part of the wafer, is provided.Type: ApplicationFiled: March 24, 2021Publication date: July 15, 2021Applicant: SHOWA DENKO K.K.Inventors: Jia Yu, Naoto Ishibashi, Keisuke Fukada, Yoshikazu Umeta, Hironori Atsumi
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Publication number: 20210066113Abstract: A susceptor (1) of the present invention is a susceptor that is configured to hold a wafer in a CVD apparatus that forms a layer on a wafer through chemical vapor deposition, and includes an external susceptor (2) and an internal susceptor (1). The external susceptor (2) has an opening (2c) that accommodates the internal susceptor (1) in a coupling manner and has a wafer placement surface (2a) on which an outer peripheral portion (Ws) of a wafer is placed. The internal susceptor (1) includes a projection portion (1a) on a surface (1b) facing the wafer (W), and a height (h) of the projection portion (1a) is a height at which the projection portion does not come into contact with the wafer (W) when the wafer (W) is placed on the susceptor.Type: ApplicationFiled: June 22, 2018Publication date: March 4, 2021Applicant: SHOWA DENKO K.K.Inventors: Yoshikazu UMETA, Keisuke FUKADA, Naoto ISHIBASHI, Hironori ATSUMI
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Publication number: 20200118849Abstract: According to an aspect of the present invention, there is provided a deposition apparatus including: a reaction space which is a reaction chamber; a front chamber for deposition; a raw material supply port that is configured to supply a raw material to the reaction space; an opening for measuring a temperature of a wafer mounted on a wafer mounting surface of a mounting stage disposed in the reaction space; and a partition plate that partitions the reaction space and the front chamber for deposition, in which the raw material supply port is positioned on the same plane as the partition plate or on the reaction space side from the partition plate, and the opening is positioned in the front chamber for deposition side from the partition plate.Type: ApplicationFiled: May 9, 2018Publication date: April 16, 2020Applicant: SHOWA DENKO K.K.Inventors: Keisuke FUKADA, Naoto ISHIBASHI, Hironori ATSUMI
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Publication number: 20200083085Abstract: A susceptor which is used in a chemical vapor deposition apparatus for growing an epitaxial layer on a principal plane of a wafer by a chemical vapor deposition method, and which includes a base; and three protrusion parts that are disposed on an outer circumferential part of the base and support an outer circumferential part of the wafer, is provided.Type: ApplicationFiled: September 4, 2019Publication date: March 12, 2020Applicant: SHOWA DENKO K.K.Inventors: Jia YU, Naoto ISHIBASHI, Keisuke FUKADA, Yoshikazu UMETA, Hironori ATSUMI
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Publication number: 20200083330Abstract: A method for producing a SiC epitaxial wafer according to the present embodiment includes: an epitaxial growth step of growing the epitaxial layer on the SiC single crystal substrate by feeding an Si-based raw material gas, a C-based raw material gas, and a gas including a Cl element to a surface of a SiC single crystal substrate, in which the epitaxial growth step is performed under growth conditions that a film deposition pressure is 30 torr or less, a Cl/Si ratio is in a range of 8 to 12, a C/Si ratio is in a range of 0.8 to 1.2, and a growth rate is 50 ?m/h or more from an initial growth stage.Type: ApplicationFiled: April 19, 2018Publication date: March 12, 2020Applicants: SHOWA DENKO K.K., Central Research Institute of Electric Power Industry, DENSO CORPORATIONInventors: Keisuke FUKADA, Naoto ISHIBASHI, Akira BANDO, Masahiko ITO, Isaho KAMATA, Hidekazu TSUCHIDA, Kazukuni HARA, Masami NAITO, Hideyuki UEHIGASHI, Hiroaki FUJIBAYASHI, Hirofumi AOKI, Toshikazu SUGIURA, Katsumi SUZUKI
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Publication number: 20190376206Abstract: This SiC epitaxial wafer includes: a SiC single crystal substrate of which a main surface has an off-angle of 0.4° to 5° with respect to (0001) plane; and an epitaxial layer provided on the SiC single crystal substrate, wherein the epitaxial layer has a basal plane dislocation density of 0.1 pieces/cm2 or less that is a density of basal plane dislocations extending from the SiC single crystal substrate to an outer surface and an intrinsic 3C triangular defect density of 0.1 pieces/cm2 or less.Type: ApplicationFiled: December 25, 2017Publication date: December 12, 2019Applicants: SHOWA DENKO K.K, Central Research Institute of Electric Power Industry, DENSO CORPORATIONInventors: Keisuke FUKADA, Naoto ISHIBASHI, Akira BANDO, Masahiko ITO, Isaho KAMATA, Hidekazu TSUCHIDA, Kazukuni HARA, Masami NAITO, Hideyuki UEHIGASHI, Hiroaki FUJIBAYASHI, Hirofumi AOKI, Toshikazu SUGIURA, Katsumi SUZUKI
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Publication number: 20190316273Abstract: A method of producing a p-type SiC epitaxial wafer, the method including: a step of setting an input raw material C/Si ratio, being a ratio between the C element and the Si element in a feedstock gas; and a step of obtaining a p-type SiC epitaxial wafer having an Al dopant concentration of at least 1×1018 cm?3 by forming a p-type SiC epitaxial film on a substrate in a film-forming atmosphere comprising the feedstock gas, a Cl-based gas containing Cl in the molecule, and a dopant gas containing Al and C in the molecule, wherein the input raw material C/Si ratio is set based on a total gas C/Si ratio, being a ratio between the C element and the Si element in the film-forming atmosphere containing the C element included in the dopant gas, the input raw material C/Si ratio differs from the total gas C/Si ratio, and the input raw material C/Si ratio is 0.8 or less.Type: ApplicationFiled: December 11, 2017Publication date: October 17, 2019Applicant: SHOWA DENKO K.K.Inventors: Naoto ISHIBASHI, Keisuke FUKADA, Akira BANDOH
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Publication number: 20190169742Abstract: This gas piping system is a run-vent mode gas piping system in which, the gas piping system including a plurality of supply lines through which plural gases are fed individually, an exhaust line that leads from a reactor to an exhaust pump, a run line having one or plural pipes which respectively branch from the plural supply lines, plural vent lines which respectively branch from the supply lines and are connected to the exhaust line, and plural valves which are respectively provided at the branch points of the plural supply lines, and switches between feeding a gas to the run line side and feeding a gas to the vent line side, wherein the plural vent lines are separated from each other until the vent lines reach the exhaust line, and the inner diameter of the exhaust line is greater than the inner diameter of the plural vent lines.Type: ApplicationFiled: June 12, 2017Publication date: June 6, 2019Applicant: SHOWA DENKO K.K.Inventors: Naoto ISHIBASHI, Keisuke FUKADA, Tomoya UTASHIRO, Akira BANDO
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Publication number: 20190148496Abstract: An SiC epitaxial wafer according to the present invention includes: an SiC single crystal substrate; and a carrier concentration variation layer disposed on one face side of the SiC single crystal substrate, wherein the carrier concentration variation layer includes: high concentration layers in which carrier concentrations thereof are higher than carrier concentrations of adjacent layers; and low concentration layers in which carrier concentrations are lower than in adjacent layers, and the high concentration layers and the low concentration layers are laminated alternately.Type: ApplicationFiled: October 5, 2018Publication date: May 16, 2019Applicant: SHOWA DENKO K.K.Inventors: Naoto ISHIBASHI, Keisuke FUKADA
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Publication number: 20190144995Abstract: A chemical vapor deposition apparatus is provided which comprises a reaction furnace in which vapor deposition is performed and an exhaust pipe which discharges a gas from an interior of the reaction furnace, wherein the exhaust pipe includes at least one of a bending part, and the bending part includes at least one of a pipe-extension part, and the pipe-extension part extends from the bending part and has a storage space in the pipe-extension part.Type: ApplicationFiled: October 31, 2018Publication date: May 16, 2019Applicant: SHOWA DENKO K.K.Inventors: Naoto ISHIBASHI, Keisuke FUKADA, Yoshikazu UMETA, Tomohiro KODAMA
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Publication number: 20180371640Abstract: A wafer supporting mechanism including: a wafer supporting table; and a movable part supported by the wafer supporting table, wherein the wafer supporting table includes a wafer supporting portion for transfer that stands up from a first surface opposing a back surface of a wafer to be placed and is provided further toward an inner side than an outer peripheral edge of the wafer to be placed, and the movable part includes a wafer supporting portion for film formation that is positioned further toward an outer peripheral side of the wafer to be placed than the wafer supporting portion for transfer and is relatively movable with respect to the wafer supporting table in a standing direction of the wafer supporting portion for transfer.Type: ApplicationFiled: December 12, 2016Publication date: December 27, 2018Applicant: SHOWA DENKO K.K.Inventors: Jia YU, Naoto ISHIBASHI, Keisuke FUKADA, Tomoya UTASHIRO, Hironori ATSUMI
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Publication number: 20160227822Abstract: The present invention provides a food composition that makes it possible to effectively conduct mastication and swallowing training. The food composition contains a starch, a gelling agent, a paste, and water, the amount of the water contained in the composition being 65 wt % or more and less than 90 wt %, the total amount of the starch, the gelling agent, the paste, and the water being 85 to 100 wt %, the composition having a fracture stress of 20,000 to 70,000 N/m2.Type: ApplicationFiled: June 12, 2014Publication date: August 11, 2016Applicant: OTSUKA PHARMACEUTICAL FACTORY, INC.Inventors: Kazumi Abe, Naoto Ishibashi
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Patent number: 8673976Abstract: A medicament for prophylactic and/or therapeutic treatment of hepatic steatosis or non-alcoholic steatohepatitis, which comprises a polyprenyl compound (e.g., 3,7,11,15-tetramethyl-2,4,6,10,14-hexadecapentaenoic acid) as an active ingredient.Type: GrantFiled: June 15, 2012Date of Patent: March 18, 2014Assignee: Kowa Company, Ltd.Inventors: Yuji Yoshikawa, Megumi Yamamoto, Naoto Ishibashi, Mami Seki