Abstract: To provide a semiconductor light emitting device which is capable of accomplishing a broad color reproducibility for an entire image without losing brightness of the entire image. A light source provided on a backlight for a color image display device has a semiconductor light emitting device comprising a solid light emitting device to emit light in a blue or deep blue region or in an ultraviolet region and phosphors, in combination. The phosphors comprise a green emitting phosphor and a red emitting phosphor. The green emitting phosphor and the red emitting phosphor are ones, of which the rate of change of the emission peak intensity at 100° C. to the emission intensity at 25° C., when the wavelength of the excitation light is 400 nm or 455 nm, is at most 40%.

Abstract: To provide a semiconductor light emitting device which is capable of accomplishing a broad color reproducibility for an entire image without losing brightness of the entire image. A light source provided on a backlight for a color image display device has a semiconductor light emitting device comprising a solid light emitting device to emit light in a blue or deep blue region or in an ultraviolet region and phosphors, in combination. The phosphors comprise a green emitting phosphor and a red emitting phosphor. The green emitting phosphor and the red emitting phosphor are ones, of which the rate of change of the emission peak intensity at 100° C. to the emission intensity at 25° C., when the wavelength of the excitation light is 400 nm or 455 nm, is at most 40%.

Abstract: The present invention obtains a controller and a control method capable of simultaneously achieving freedom of driving and safety of a lean vehicle. In a controller (60) and the control method according to the present invention, a control section of the controller (60) can execute anti-lock braking operation for suppressing locking of a rear wheel (4) by increasing/reducing a braking force or drive power of the rear wheel (4) of a lean vehicle (100) and thereby controlling a slip degree of the rear wheel (4) to a slip degree target, and in the case where a slide request, which is a request by a rider to make the lean vehicle (100) slide, is present, implements a slide control mode in which the anti-lock braking operation is performed by setting the slip degree target to be higher than that of a case where the slide request is absent.

Abstract: To provide a semiconductor light emitting device which is capable of accomplishing a broad color reproducibility for an entire image without losing brightness of the entire image. A light source provided on a backlight for a color image display device has a semiconductor light emitting device comprising a solid light emitting device to emit light in a blue or deep blue region or in an ultraviolet region and phosphors, in combination. The phosphors comprise a green emitting phosphor and a red emitting phosphor. The green emitting phosphor and the red emitting phosphor are ones, of which the rate of change of the emission peak intensity at 100° C. to the emission intensity at 25° C., when the wavelength of the excitation light is 400 nm or 455 nm, is at most 40%.

Abstract: A wavelength conversion member including a wavelength conversion layer containing a fluoride phosphor, quantum dots, a surfactant, and a resin. The fluoride phosphor contains fluoride particles having a specific composition and having particle size values within specific ranges. The quantum dots include at least one selected from a first crystalline nanoparticle and a second crystalline nanoparticle. The first crystalline nanoparticle has a specific composition. When irradiated with light having a wavelength of 450 nm, the first crystalline nanoparticle emits light having an emission peak at a wavelength in a range from 510 nm to 535 nm, and a full width at half maximum of the emission peak of the first crystalline nanoparticle is in a range from 10 nm to 30 nm. The second crystalline nanoparticle includes a chalcopyrite-type crystalline structure, and a full width at half maximum of the emission peak of the second crystalline nanoparticle is 45 nm or less.

Abstract: To provide a semiconductor light emitting device which is capable of accomplishing a broad color reproducibility for an entire image without losing brightness of the entire image. A light source provided on a backlight for a color image display device has a semiconductor light emitting device comprising a solid light emitting device to emit light in a blue or deep blue region or in an ultraviolet region and phosphors, in combination. The phosphors comprise a green emitting phosphor and a red emitting phosphor. The green emitting phosphor and the red emitting phosphor are ones, of which the rate of change of the emission peak intensity at 100° C. to the emission intensity at 25° C., when the wavelength of the excitation light is 400 nm or 455 nm, is at most 40%.

Abstract: A wavelength conversion member including a wavelength conversion layer containing a fluoride phosphor, quantum dots, a surfactant, and a resin. The fluoride phosphor contains fluoride particles having a specific composition and having particle size values within specific ranges. The quantum dots include at least one selected from a first crystalline nanoparticle and a second crystalline nanoparticle. The first crystalline nanoparticle has a specific composition. When irradiated with light having a wavelength of 450 nm, the first crystalline nanoparticle emits light having an emission peak at a wavelength in a range from 510 nm to 535 nm, and a full width at half maximum of the emission peak of the first crystalline nanoparticle is in a range from 10 nm to 30 nm. The second crystalline nanoparticle includes a chalcopyrite-type crystalline structure, and a full width at half maximum of the emission peak of the second crystalline nanoparticle is 45 nm or less.

Abstract: To provide a semiconductor light emitting device which is capable of accomplishing a broad color reproducibility for an entire image without losing brightness of the entire image. A light source provided on a backlight for a color image display device has a semiconductor light emitting device comprising a solid light emitting device to emit light in a blue or deep blue region or in an ultraviolet region and phosphors, in combination. The phosphors comprise a green emitting phosphor and a red emitting phosphor. The green emitting phosphor and the red emitting phosphor are ones, of which the rate of change of the emission peak intensity at 100° C. to the emission intensity at 25° C., when the wavelength of the excitation light is 400 nm or 455 nm, is at most 40%.

Abstract: To provide a semiconductor light emitting device which is capable of accomplishing a broad color reproducibility for an entire image without losing brightness of the entire image. A light source provided on a backlight for a color image display device has a semiconductor light emitting device comprising a solid light emitting device to emit light in a blue or deep blue region or in an ultraviolet region and phosphors, in combination. The phosphors comprise a green emitting phosphor and a red emitting phosphor. The green emitting phosphor and the red emitting phosphor are ones, of which the rate of change of the emission peak intensity at 1000 C to the emission intensity at 25° C., when the wavelength of the excitation light is 400 nm or 455 nm, is at most 40%.

Abstract: To provide a semiconductor light emitting device which is capable of accomplishing a broad color reproducibility for an entire image without losing brightness of the entire image. A light source provided on a backlight for a color image display device has a semiconductor light emitting device comprising a solid light emitting device to emit light in a blue or deep blue region or in an ultraviolet region and phosphors, in combination. The phosphors comprise a green emitting phosphor and a red emitting phosphor. The green emitting phosphor and the red emitting phosphor are ones, of which the rate of change of the emission peak intensity at 100° C. to the emission intensity at 25° C., when the wavelength of the excitation light is 400 nm or 455 nm, is at most 40%.

Abstract: To provide a semiconductor light emitting device which is capable of accomplishing a broad color reproducibility for an entire image without losing brightness of the entire image. A light source provided on a backlight for a color image display device has a semiconductor light emitting device comprising a solid light emitting device to emit light in a blue or deep blue region or in an ultraviolet region and phosphors, in combination. The phosphors comprise a green emitting phosphor and a red emitting phosphor. The green emitting phosphor and the red emitting phosphor are ones, of which the rate of change of the emission peak intensity at 100° C. to the emission intensity at 25° C., when the wavelength of the excitation light is 400 nm or 455 nm, is at most 40%.

Abstract: To provide a semiconductor light emitting device which is capable of accomplishing a broad color reproducibility for an entire image without losing brightness of the entire image. A light source provided on a backlight for a color image display device has a semiconductor light emitting device comprising a solid light emitting device to emit light in a blue or deep blue region or in an ultraviolet region and phosphors, in combination. The phosphors comprise a green emitting phosphor and a red emitting phosphor. The green emitting phosphor and the red emitting phosphor are ones, of which the rate of change of the emission peak intensity at 100° C. to the emission intensity at 25° C., when the wavelength of the excitation light is 400 nm or 455 nm, is at most 40%.

Abstract: To provide a semiconductor light emitting device which is capable of accomplishing a broad color reproducibility for an entire image without losing brightness of the entire image. A light source provided on a backlight for a color image display device has a semiconductor light emitting device comprising a solid light emitting device to emit light in a blue or deep blue region or in an ultraviolet region and phosphors, in combination. The phosphors comprise a green emitting phosphor and a red emitting phosphor. The green emitting phosphor and the red emitting phosphor are ones, of which the rate of change of the emission peak intensity at 100° C. to the emission intensity at 25° C., when the wavelength of the excitation light is 400 nm or 455 nm, is at most 40%.

Abstract: Provided is a phosphor having enhanced luminance with respect to that of conventional ?-type sialon phosphors. A phosphor having enhanced luminance is obtained by causing Al, O (oxygen) and Eu to be present at specific concentrations in a produced ?-type sialon phosphor. Specifically, provided is a ?-type sialon phosphor containing Si, Al, O, N and Eu, wherein the Al concentration in the phosphor ranges from 0.80 mass % or higher to 2.25 mass % or lower, the O concentration ranges from 0.36 mass % or higher to 1.15 mass % or lower, the Eu concentration ranges from 0.40 mass % or higher to 0.80 mass % or lower and a ratio (Al/O) of the Al concentration with respect to the O concentration ranges from 2.0 or higher to 3.0 or lower.

Abstract: To achieve a light-emitting device emitting light with high brightness, closer to natural light, and less color shift due to a small change in intensity of emitted light, in a light-emitting device including a light source emitting light by driving current and at least one wavelength-converting material absorbing at least part of the light from the light source and emitting light having a different wavelength, the color coordinate x1(17.5) and the color coordinate y1(17.5) of the light emitted at a driving current density of 17.5 A/cm2 and the color coordinate x1(70) and the color coordinate y1(70) of the light emitted at a driving current density of 70 A/cm2 satisfy the following Expressions (D) and (E): ?0.006?x1(17.5)?x1(70)?0.006??(D), ?0.006?y1(17.5)?y1(70)?0.006??(E).

Abstract: To provide a new phosphor of which fluorescence contains much red light component and has a large full width at half maximum, the crystal phase represented by the formula [I] is included in the phosphor. R3?x?y?z+w2MzA1.5x+y?w2Si6?w1?w2AlW1+w2Oy+w1N11?y?w1??[I] (R represents La, Gd, Lu, Y and/or Sc, M represents Ce, Eu, Mn, Yb, Pr and/or Tb, A represents Ba, Sr, Ca, Mg and/or Zn, and x, y, z, w1 and w2 are the numeric values in the following ranges: (1/7)?(3?x?y?z+w2)/6<(1/2), 0<(1.5x+y?w2)/6<(9/2), 0<x<3, 0?y<2, 0<z<1, 0?w1?5, 0?w2?5, and 0?w1+w2?5).

Abstract: The present invention provides a technology that allows reducing the used amount of a Mn4+-activated fluoride complex phosphor without loss of luminous efficiency, in a white light-emitting device that is provided with the Mn4+-activated fluoride complex phosphor and an LED element that is an excitation source of the phosphor. The present invention provides a white light-emitting device comprises a blue LED element, as well as a yellow phosphor and/or a green phosphor and a red phosphor as phosphors that are excited by the blue LED element. The red phosphor contains a Mn4+-activated fluoride complex phosphor and a Eu2+-activated alkaline earth silicon nitride phosphor.

Abstract: To enhance luminance and color rendering of a light emitting device comprising phosphors as wavelength converting material and at least one semiconductor light emitting device that emits visible light, as said phosphors, are used phosphors which are one or more kinds of phosphors selected from a group consisting of oxides, oxynitrides and nitrides, and are a mixture consisting of two or more kinds of phosphors whose luminous efficiency is 35% or higher when excited by the visible light from said semiconductor light emitting device at room temperature. In addition, said mixture contains a first phosphor, and a second phosphor that is different from said first phosphor and capable of absorbing emitted light from said first phosphor, and said first phosphor is contained 85 weight % or more of said mixture of phosphors.

Abstract: A phosphor includes a crystal phase of a formula (Ln,Ca,Ce)3+?Si6N11. In this formula, ? is from ?0.1 to 1.5, inclusive. When an object color of the phosphor is expressed by the L*a*b* color system, the value of (a*2+b*2)1/2 satisfies 71?(a*2+b*2)1/2. Also in the formula, Ln is La, Gd, Lu, Y, Sc, or any combination of these. When the phosphor is excited with light having a wavelength of 455 nm, it emits a color wherein x is from 0.400 to 0.570 inclusive, and y is from 0.420 to 0.590, inclusive, as expressed in the CIE standard coordinate system.

Abstract: A nitride phosphor contains europium as an activating element and strontium, or strontium and calcium, as divalent metal elements. The phosphor further includes aluminum and silicon. Of the europium in the phosphor, at least 85% is in the form of Eu2+. The phosphor has a peak emission wavelength of from 590 nm to 650 nm. A phosphorescent body that includes the phosphor can be suitable for converting a wavelength of at least a portion of light emitted from an excitation light source in a light-emitting device.