Abstract: Provided is a production method for an all-solid-state battery having a solid electrolyte layer between a positive electrode layer and a negative electrode layer, the production method including: coating or impregnating the positive electrode layer and/or the negative electrode layer with a solid electrolyte solution in which a boron hydride compound serving as the solid electrolyte has been dissolved in a solvent; and removing the solvent from the coated or impregnated solid electrolyte solution and causing the solid electrolyte to precipitate on the positive electrode layer and/or the negative electrode layer.

Abstract: Provided is a polishing composition that can reduce increase in temperature of a polishing pad during polishing. The polishing composition provided by the present invention contains water, oxidant A selected from compounds other than peroxide, a first metal salt selected from alkaline-earth metal salts, and a second metal salt selected from salts each of which has a cation of a metal belonging to groups 3 to 16 in the periodic table, and an anion.

Abstract: Provided is a method that enables good cleaning of a polished substrate formed of a high-hardness material. Provided is a method of polishing and cleaning a substrate formed of a material having a Vickers hardness of 1500 Hv or more. The method includes: polishing a substrate to be polished using a polishing composition; and cleaning the polished substrate using a cleaner. The polishing composition contains a polishing auxiliary. Furthermore, the cleaner contains a surfactant.

Abstract: An object of the present invention is to provide a polishing composition that can achieve both a high polishing removal rate and high surface quality. According to the present invention, provided is a polishing composition for polishing a material to be polished. The polishing composition contains sodium metavanadate, hydrogen peroxide, and silica abrasive. The content C1 of sodium metavanadate is 0.7% to 3.5% by weight, the content C2 of hydrogen peroxide is 0.3% to 3% by weight, and the content C3 of the silica abrasive is 12% to 50% by weight.

Abstract: According to the present invention, there is provided a polishing composition used for polishing a gallium compound-based semiconductor substrate. The polishing composition includes a silica abrasive; a compound Cpho having a phosphoric acid group or a phosphonic acid group; and water. In addition, according to the present invention, there is provided a method for polishing a gallium compound-based semiconductor substrate. The method includes a first polishing step in which polishing is performed using a slurry S1 containing an abrasive A1 and water; and a second polishing step in which polishing is performed using a slurry S2 containing an abrasive A2 and water, in this order. The abrasive A2 contains a silica abrasive. The slurry S2 further contains a compound Cpho having a phosphoric acid group or a phosphonic acid group.

Abstract: The present invention provides a polishing composition with which polishing rates can be effectively improved and which is for polishing works to be polished. The polishing composition comprises water, abrasive grains, an oxidant, and a polishing accelerator. The polishing accelerator comprises at least one metal salt selected from the group consisting of alkali metal salts and alkaline-earth metal salts.

Abstract: Provided is a polishing composition that can effectively improve a polishing removal rate. According to the present invention, a polishing composition for polishing a polishing target material is provided. The polishing composition contains water, an oxidant, and a polishing removal accelerator, and does not contain abrasive. At least one metal salt selected from the group consisting of an alkali metal salt and an alkaline earth metal salt is contained as the polishing removal accelerator.

Abstract: Provided is a polishing composition that can effectively improve a polishing removal rate. According to the present invention, a polishing composition for polishing a polishing target material is provided. The polishing composition contains water, an oxidant, and a polishing removal accelerator, and does not contain abrasive. At least one metal salt selected from the group consisting of an alkali metal salt and an alkaline earth metal salt is contained as the polishing removal accelerator.

Abstract: An object of the present invention is to provide a polishing composition that can achieve both a high polishing removal rate and high surface quality. According to the present invention, provided is a polishing composition for polishing a material to be polished. The polishing composition contains sodium metavanadate, hydrogen peroxide, and silica abrasive. The content C1 of sodium metavanadate is 0.7% to 3.5% by weight, the content C2 of hydrogen peroxide is 0.3% to 3% by weight, and the content C3 of the silica abrasive is 12% to 50% by weight.

Abstract: An object of the present invention is to provide a polishing composition that can achieve both a high polishing removal rate and high surface quality. According to the present invention, provided is a polishing composition for polishing a material to be polished. The polishing composition contains sodium metavanadate, hydrogen peroxide, and silica abrasive. The content C1 of sodium metavanadate is 0.7% to 3.5% by weight, the content C2 of hydrogen peroxide is 0.3% to 3% by weight, and the content C3 of the silica abrasive is 12% to 50% by weight.

Abstract: Provided are a polishing composition capable of achieving both a high polishing removal rate and high surface quality in polishing a gallium oxide substrate, and a method for polishing and a method for manufacturing a gallium oxide substrate using the polishing composition. According to the art disclosed herein, provided is a polishing composition used for polishing a gallium oxide substrate. This polishing composition contains abrasive and water. By polishing with such a polishing composition, it is possible to improve the polishing removal rate for the gallium oxide substrate and realize a gallium oxide substrate having good surface quality.

Abstract: According to the present invention, there is provided a polishing composition used for polishing a gallium compound-based semiconductor substrate. The polishing composition includes a silica abrasive; a compound Cpho having a phosphoric acid group or a phosphonic acid group; and water. In addition, according to the present invention, there is provided a method for polishing a gallium compound-based semiconductor substrate. The method includes a first polishing step in which polishing is performed using a slurry S1 containing an abrasive A1 and water; and a second polishing step in which polishing is performed using a slurry S2 containing an abrasive A2 and water, in this order. The abrasive A2 contains a silica abrasive. The slurry S2 further contains a compound Cpho having a phosphoric acid group or a phosphonic acid group.

Abstract: The present invention provides a polishing composition with which polishing rates can be effectively improved and which is for polishing works to be polished. The polishing composition comprises water, abrasive grains, an oxidant, and a polishing accelerator. The polishing accelerator comprises at least one metal salt selected from the group consisting of alkali metal salts and alkaline-earth metal salts.

Abstract: An object of the present invention is to provide a polishing composition that can achieve both a high polishing removal rate and high surface quality. According to the present invention, provided is a polishing composition for polishing a material to be polished. The polishing composition contains sodium metavanadate, hydrogen peroxide, and silica abrasive. The content C1 of sodium metavanadate is 0.7% to 3.5% by weight, the content C2 of hydrogen peroxide is 0.3% to 3% by weight, and the content C3 of the silica abrasive is 12% to 50% by weight.

Abstract: Provided is a polishing composition that can effectively improve a polishing removal rate. According to the present invention, a polishing composition for polishing a polishing target material is provided. The polishing composition contains water, an oxidant, and a polishing removal accelerator, and does not contain abrasive. At least one metal salt selected from the group consisting of an alkali metal salt and an alkaline earth metal salt is contained as the polishing removal accelerator.

Abstract: A temperature sensor having a structure in which electrode wires are butted against signal wires with their weld portions and a method for manufacturing the temperature sensor. In a temperature sensor (1), outer circumferential portions (57a) and (57b) of each of weld portions (55) between electrode wires (25) and sheath core wires (3) are located outward of a first straight line D1 and a second straight line D2, respectively. A forward end-side length L1 is set to be longer than a rear end-side length L2. In addition, the sheath core wires (3) are larger in diameter than the electrode wires (25).

Abstract: An oil level regulating apparatus includes a valve unit and a solenoid unit. The valve unit includes a housing having an inflow hole, an outflow hole, and a leak hole, a partition separating the outflow hole and the leak hole, defining a valve chamber close to the outflow hole, and having a partition continuous hole, a valve dividing the valve chamber into an introduction chamber and a pressure chamber and having a valve continuous hole, and a valve biasing member biasing the valve. The solenoid unit has a shaft configured to open and close a leak channel. The shaft can open and close the leak channel on the downstream side of the pressure chamber. When the shaft closes the leak channel, the valve is switched to a closed valve state of closing the outflow hole.

Abstract: A temperature sensor having a structure in which electrode wires are butted against signal wires with their weld portions and a method for manufacturing the temperature sensor. In a temperature sensor (1), outer circumferential portions (57a) and (57b) of each of weld portions (55) between electrode wires (25) and sheath core wires (3) are located outward of a first straight line D1 and a second straight line D2, respectively. A forward end-side length L1 is set to be longer than a rear end-side length L2. In addition, the sheath core wires (3) are larger in diameter than the electrode wires (25).

Abstract: An oil level regulating apparatus includes a valve unit and a solenoid unit. The valve unit includes a housing having an inflow hole, an outflow hole, and a leak hole, a partition separating the outflow hole and the leak hole, defining a valve chamber close to the outflow hole, and having a partition continuous hole, a valve dividing the valve chamber into an introduction chamber and a pressure chamber and having a valve continuous hole, and a valve biasing member biasing the valve. The solenoid unit has a shaft configured to open and close a leak channel. The shaft can open and close the leak channel on the downstream side of the pressure chamber. When the shaft closes the leak channel, the valve is switched to a closed valve state of closing the outflow hole.

Abstract: A method and apparatus for performing simulation display of the three-dimensional shapes and occlusal contact region of the upper and lower tooth rows at a high speed. A jaw movement sensor fits an examinee, and data on jaw movement of the examinee is acquired. An impression plate including a rigid flat plate having a top surface and a bottom surface each coated with an impression material inserted between the examinee's upper and lower tooth rows to which the jaw movement sensor is fitted, and the examinee performs a temporary occlusion. Impressions left on the impression material and a gauge mark provided on the rigid flat plate are measured by using a three-dimensional measuring instrument, whereby the three-dimensional shape data of the upper and lower tooth rows and gauge mark are acquired. Simulation display of movement of the aforementioned is performed at a time of temporary occlusion and jaw movement data.