Abstract: The problems in accordance with the present invention are: to provide a DLC film, wherein a protective film having a segmented shape is easily formed, quality control of the protective film is improved, segmented shapes with a high degree of freedom (that are complicated) are possible, and the application of the DLC film is possible not only to two-dimensional shapes but also to three-dimensional shapes; and to provide a method for forming the DLC film. As solutions to the problems, there are provided a protective film and a method for producing the protective film, characterized by, when forming on a substrate the protective film having a segmented shape formed by depositing a film so that the film is formed divided into segments, masking the substrate using a drawing material so that segments having predetermined shapes are obtained, thereafter depositing the protective film, and then removing the masked part to form a spacing between segments.

Abstract: Provided are a percutaneous absorption enhancer excellent in an enhancing effect on percutaneous absorption of a wide range of drugs and excellent in compatibility with an adhesive base, and a transdermal preparation using the percutaneous absorption enhancer. The percutaneous absorption enhancer includes a sulfosuccinate or a salt thereof and an alkyl glycoside or an alkyl thioglycoside.

Abstract: The problems in accordance with the present invention are: to provide a DLC film, wherein a protective film having a segmented shape is easily formed, quality control of the protective film is improved, segmented shapes with a high degree of freedom (that are complicated) are possible, and the application of the DLC film is possible not only to two-dimensional shapes but also to three-dimensional shapes; and to provide a method for forming the DLC film. As solutions to the problems, there are provided a protective film and a method for producing the protective film, characterized by, when forming on a substrate the protective film having a segmented shape formed by depositing a film so that the film is formed divided into segments, masking the substrate using a drawing material so that segments having predetermined shapes are obtained, thereafter depositing the protective film, and then removing the masked part to form a spacing between segments.

Abstract: Provided are a percutaneous absorption enhancer excellent in an enhancing effect on percutaneous absorption of a wide range of drugs and excellent in compatibility with an adhesive base, and a transdermal preparation using the percutaneous absorption enhancer. The percutaneous absorption enhancer includes a sulfosuccinate or a salt thereof and an alkyl glycoside or an alkyl thioglycoside.

Abstract: The present invention relates to a diamond-like carbon film forming apparatus and a method of forming a diamond-like carbon film. A diamond-like carbon film forming apparatus using plasma chemical vapor deposition of the present invention is provided with a member (4) comprised of a substrate (2) surrounded by a conductive mask material (3) and a DC single pulse power supply (6) and superimposition DC power supply (26) and/or high frequency power supply (7) for supplying power voltage with the wall of the chamber (5) of the diamond-like carbon film forming apparatus, which apparatus selects and applies to the member (4) either a negative single pulse voltage from the DC single pulse power supply (6) and said superimposition DC power supply (26) or a high frequency voltage of the high frequency power supply (7) so as to form a segment structure diamond-like carbon film on the substrate (2) surrounded by the mask material (3).

Abstract: An object of the present invention is to provide a method of forming a thin film of excellent quality by generating discharge plasma using gaseous raw material including a carbon source under an atmosphere of a relatively high pressure of 100 Torr or higher. A substrate 6 is mounted on at least one of opposing electrodes 4 and 5. A pulse voltage is applied on the opposing electrodes 4 and 5 under a pressure of 100 to 1600 Torr in an atmosphere containing gaseous raw material “A” including a carbon source to generate discharge plasma. A thin film 7 is thus formed on the substrate 6. The pulse voltage has a pulse duration of 10 to 1000 nsec.

Abstract: An object of the present invention is to form a thin film reproducibly in a process for forming the thin film on the inner wall surface facing a space formed in a substrate by plasma CVD. A thin film 22 is produced on an inner wall surface 20b of a substrate 20 facing a space 23 formed in the substrate 20. The substrate 20 is contained in a chamber for plasma CVD process. A gas for plasma reaction is then flown into the space 23 and a pulse voltage is applied on the substrate 20 without substantially applying a direct bias voltage on the substrate 20 to form the thin film on the inner wall surface 20b.

Abstract: Methods are provided to form a thin film reproducibly in a process for forming the thin film on the inner wall surface facing a space formed in a substrate by plasma CVD. A thin film is produced on an inner wall surface of a substrate facing a space formed in the substrate. The substrate is contained in a chamber for plasma CVD process. A gas for plasma reaction is then flown into the space and a pulse voltage is applied on the substrate without substantially applying a direct bias voltage on the substrate to form the thin film on the inner wall surface.

Abstract: An object of the present invention is to form a thin film reproducibly in a process for forming the thin film on the inner wall surface facing a space formed in a substrate by plasma CVD. A thin film 22 is produced on an inner wall surface 20b of a substrate 20 facing a space 23 formed in the substrate 20. The substrate 20 is contained in a chamber for plasma CVD process. A gas for plasma reaction is then flown into the space 23 and a pulse voltage is applied on the substrate 20 without substantially applying a direct bias voltage on the substrate 20 to form the thin film on the inner wall surface 20b.

Abstract: An object of the present invention is to provide a method of forming a thin film of excellent quality by generating discharge plasma using gaseous raw material including a carbon source under an atmosphere of a relatively high pressure of 100 Torr or higher. A substrate 6 is mounted on at least one of opposing electrodes 4 and 5. A pulse voltage is applied on the opposing electrodes 4 and 5 under a pressure of 100 to 1600 Torr in an atmosphere containing gaseous raw material “A” including a carbon source to generate discharge plasma. A thin film 7 is thus formed on the substrate 6. The pulse voltage has a pulse duration of 10 to 1000 nsec.

Abstract: To provide a deposition method and a deposition apparatus, in which deposition can be performed under a low temperature and a substrate does not suffer from charge-up damage, and a semiconductor device produced thereby.