Abstract: A method of manufacturing a metal compound film is a method of manufacturing a metal compound film in which a compound generating liquid containing, as a solute component, a substance that generates a metal compound is applied to a substrate having an opening portion on a surface and sintered to form a metal compound film, including: a pre-wet liquid application step of applying a pre-wet liquid to the surface of the substrate, and filling the opening portion with the pre-wet liquid, the pre-wet liquid having better wettability to the substrate than the compound generating liquid; a compound generating liquid application step of applying the compound generating liquid to stack the compound generating liquid on the pre-wet liquid on the substrate, and diffusing the solute component of the compound generating liquid in the pre-wet liquid; and a sintering step of sintering the applied compound generating liquid to form metal compound film.

Abstract: A hafnium compound-containing sol-gel solution contains a lower alcohol having 5 or less carbon atoms that serves as a solvent, a hafnium compound that serves as a hafnium source, and a polyalcohol having either or both of an ether group and a N atom in a molecule, as a wettability improver. The hafnium compound-containing sol-gel solution preferably further contains a stabilizer. It is preferable that the content of the hafnium compound is regulated within a range of 0.05 mass % or more and 10 mass % or less, and the content of the polyalcohol is regulated within a range of 0.05 mass % or more and 20 mass % or less.

Abstract: The plasma-resistant coating film according to the present invention is formed on a substrate, including crystalline Y2O3 particles having an average particle diameter of 0.5 ?m to 5.0 ?m in a SiO2 film, in which a film density of the plasma-resistant coating film is 90% or more, the film density being obtained by performing image analysis of a cross section of the film with an electron scanning microscope and by using the following expression (1), a size of pores in the film is 5 ?m or less in terms of diameter, and a peeling rate of the film from the substrate measured by performing a cross-cut test is 5% or less. Film density (%)=[(S1?S2)/S1]×100 (1). However, in the expression (1), S1 is an area of the film and S2 is an area of a pore portion in the film.

Abstract: A piezoelectric film contains iron-containing potassium sodium niobate represented by General Formula (1) and granular crystal particles having an average aspect ratio of 3 or less. (KxNa1-x)a(FeyNbz)O3??(1) In Formula (1), x represents a number satisfying 0<x<1, a represents a number satisfying 0.90<a?1, and y and z represent numbers satisfying y+z=1 and 0.006?y/z?0.04.

Abstract: This liquid composition for forming a KNN film includes an organic metal compound including an organic potassium compound, an organic sodium compound, and an organic niobium compound, and a solvent. In this liquid composition for forming a KNN film, the organic potassium compound and the sodium compound are each metal salts of a carboxylic acid represented by General Formula CnH2n+1COOH (here, 4?n?8), the organic niobium compound is a niobium alkoxide or a metal salt of a carboxylic acid represented by General Formula CnH2n+1COOH (here, 4?n?8), and a main solvent is a carboxylic acid represented by General Formula CnH2n+1COOH (here, 4?n?8) and is included in an amount of 50% by mass to 90% by mass with respect to 100% by mass of the liquid composition for forming a KNN film.