Abstract: Provided is a coil component including a core member and a wire wound around the core member, wherein a cross section of the core member perpendicular to a winding axis of the wire wound around the core member has a circumference shape comprising at least three first arcs and connecting lines connecting the at least three first arcs adjacent to each other, and each of the at least three first arcs has a predetermined radius and a predetermined central angle for closely contacting the wire and the core member.

Abstract: A coil device 1 comprises a coil 10, a T-shaped core 20 including a columnar portion 21 around which the coil 10 is disposed and a flange 22 formed at a first end 21a of the columnar portion 21 in an axial direction thereof, and an exterior body 30 covering the coil 10 and the columnar portion 21 and made of an exterior material including magnetic particles and a resin. The core 20 is provided with a recess 40 including at least one of a first recess 41 or a second recess 42. The first recess 41 extends between the first end 21a and a second end 21b of the columnar portion 21 in the axial direction. The second recess 42 extends from an inner side towards an outer side of the flange 22.

Abstract: An R-T-B based sintered magnet includes “R”, “T”, and “B”. “R” represents a rare earth element including at least Tb. “T” represents a metal element except rare earth elements including at least Fe, Cu, Mn, Al, and Co. “B” represents boron or boron and carbon. With respect to 100 mass % of a total mass of the R-T-B based sintered magnet, a content of “R” is 28.0 to 32.0 mass %, a content of Cu is 0.04 to 0.50 mass %, a content of Mn is 0.02 to 0.10 mass %, a content of Al is 0.15 to 0.30 mass %, a content of Co is 0.50 to 3.0 mass %, and a content of “B” is 0.85 to 1.0 mass %. Tb2/Tb1 is 0.40 to less than 1.0, where Tb1 and Tb2 (mass %) denote a content of Tb at a surface portion and at a core portion, respectively.

Abstract: An R-T-B based sintered magnet includes a first main surface and a first side surface. The first main surface has a coercivity that is higher than that of the first side surface. ?HcjM?60 kA/m is satisfied, where ?HcjM is a difference in coercivity between a portion having a highest coercivity on the first main surface and a portion having a lowest coercivity on the first main surface. ?HcjG?60 kA/m is satisfied, where ?HcjG is a difference in coercivity between a portion having a highest coercivity on a first cross section and a portion having a lowest coercivity on the first cross section and the first cross section is a cross section parallel to the first main surface and spaced from the first main surface at a predetermined length or more.

Abstract: An R-T-B based sintered magnet includes “R”, “T”, and “B”. “R” represents a rare earth element including at least Tb. “T” represents a metal element except rare earth elements including at least Fe, Cu, Mn, Al, and Co. “B” represents boron or boron and carbon. With respect to 100 mass % of a total mass of the R-T-B based sintered magnet, a content of “R” is 28.0 to 32.0 mass %, a content of Cu is 0.04 to 0.50 mass %, a content of Mn is 0.02 to 0.10 mass %, a content of Al is 0.15 to 0.30 mass %, a content of Co is 0.50 to 3.0 mass %, and a content of “B” is 0.85 to 1.0 mass %. Tb2/Tb1 is 0.40 to less than 1.0, where Tb1 and Tb2 (mass %) denote a content of Tb at a surface portion and at a core portion, respectively.

Abstract: An R-T-B based sintered magnet includes a first main surface and a first side surface. The first main surface has a coercivity that is higher than that of the first side surface. ?HcjM?60 kA/m is satisfied, where ?HcjM is a difference in coercivity between a portion having a highest coercivity on the first main surface and a portion having a lowest coercivity on the first main surface. ?HcjG?60 kA/m is satisfied, where ?HcjG is a difference in coercivity between a portion having a highest coercivity on a first cross section and a portion having a lowest coercivity on the first cross section and the first cross section is a cross section parallel to the first main surface and spaced from the first main surface at a predetermined length or more.

Abstract: An injection molding composition includes a ferrite powder which is a collection of ferrite particles, a first binder and a second binder, wherein a softening point of the second binder is lower than that of the first binder, a weight and a specific surface area of the ferrite powders are represented by Wp and S, and a weight and a density of the first binder and the second binder is represented by Wb1, Wb2, and Db1, Db2, and a hypothetical thickness Tb1 of the first binder is 0.6 to 3.0, and a hypothetical thickness Tb2 of the second binder is 5.0 to 16.0. In the composition, it is preferable that coated ferrite particles covering the outer circumference of the ferrite particles with the first binder and the second binder exist. Tb1 [nm]=(Wb1×103)/(Db1×Wp×S)??formula (1) Tb2 [nm]=(Wb2×103)/(Db2×Wp×S)??formula (2).

Abstract: An injection molding composition, having a small fluctuation characteristic and a better characteristic, is provided. The above composition is the injection molding composition comprising a ferrite powder which is a collection of ferrite particles, a first binder and a second binder. A weight and a specific surface area of the ferrite powders are represented by Wp and S, and a weight and a density of the first binder and the second binder is represented by Wb1, Wb2, and Db1, Db2. A hypothetical thickness Tb1 of the first binder is 2.0 to 15.0, and a hypothetical thickness Tb2 of the second binder is 16.5 to 32.0. In the composition, it is preferable that coated ferrite particles coating the outer circumference of the ferrite particles with the first binder and the second binder exist.

Abstract: An injection molding composition includes a ferrite powder which is a collection of ferrite particles, a first binder and a second binder, wherein a softening point of the second binder is lower than that of the first binder, a weight and a specific surface area of the ferrite powders are represented by Wp and S, and a weight and a density of the first binder and the second binder is represented by Wb1, Wb2, and Db1, Db2, and a hypothetical thickness Tb1 of the first binder is 0.6 to 3.0, and a hypothetical thickness Tb2 of the second binder is 5.0 to 16.0. In the composition, it is preferable that coated ferrite particles covering the outer circumference of the ferrite particles with the first binder and the second binder exist.

Abstract: An electrochemical device according to the present invention has an outer package including a metal film; a battery element enclosed in the outer package; resin layers provided at least inside a sealing region of the outer package; and a lead extending from the battery element through between the resin layers in the sealing region of the outer package to the outside of the outer package, and a shape of the lead in the sealing region includes front and back surfaces both consisting of curved surfaces. In the sealing region, a maximum thickness Z1 of the lead near a lateral center position of the lead and a thickness Z11 at a lateral end position of the lead satisfy the relation of Z11<Z1. This electrochemical device comes to have high quality.

Abstract: An electro-chemical device comprises a package including a metal film, a battery element sealed within the package, resin layers disposed at least on the inside of a seal part of the package, and a lead extending from the battery element to the outside of the package through between the resin layers at the seal part of the package. The lead has a special form into which the resin of the resin layers bites, so that the lead is firmly buried in the resin layers, whereby the lead is fully inhibited from moving. Therefore, an electro-chemical device having a high quality can be obtained.

Abstract: An injection molding composition, having a small fluctuation characteristic and a better characteristic, is provided. The above composition is the injection molding composition comprising a ferrite powder which is a collection of ferrite particles, a first binder and a second binder. A weight and a specific surface area of the ferrite powders are represented by Wp and S, and a weight and a density of the first binder and the second binder is represented by Wb1, Wb2, and Db1, Db2. A hypothetical thickness Tb1 of the first binder is 2.0 to 15.0, and a hypothetical thickness Tb2 of the second binder is 16.5 to 32.0. In the composition, it is preferable that coated ferrite particles coating the outer circumference of the ferrite particles with the first binder and the second binder exist.

Abstract: A thin-film capacitor has a high insulation resistance value with high reliability. The thin-film capacitor includes a dielectric thin film and electrodes opposing each other through the dielectric thin film, the dielectric thin film containing a perovskite-type composite oxide having a composition expressed by (1), Mn, and at least one kind of element M selected from V, Nb, and Ta; wherein the dielectric thin film has an Mn content of 0.05 to 0.45 mol with respect to 100 mol of the composite oxide; and wherein the dielectric thin film has a total element M content of 0.05 to 0.5 mol with respect to 100 mol of the composite oxide: AyBO3??(1) where A is at least one kind of element selected from Ba, Sr, Ca, and Pb, B is at least one kind of element selected from Ti, Zr, Hf, and Sn, and 0.97?y?0.995.

Abstract: An electrochemical device according to the present invention has an outer package including a metal film; a battery element enclosed in the outer package; resin layers provided at least inside a sealing region of the outer package; and a lead extending from the battery element through between the resin layers in the sealing region of the outer package to the outside of the outer package, and a shape of the lead in the sealing region includes front and back surfaces both consisting of curved surfaces. In the sealing region, a maximum thickness Z1 of the lead near a lateral center position of the lead and a thickness Z11 at a lateral end position of the lead satisfy the relation of Z11<Z1. This electrochemical device comes to have high quality.

Abstract: An electro-chemical device comprises a package including a metal film, a battery element sealed within the package, resin layers disposed at least on the inside of a seal part of the package, and a lead extending from the battery element to the outside of the package through between the resin layers at the seal part of the package. The lead has a special form into which the resin of the resin layers bites, so that the lead is firmly buried in the resin layers, whereby the lead is fully inhibited from moving. Therefore, an electro-chemical device having a high quality can be obtained.

Abstract: The present invention provides a thin-film capacitor having an insulation resistance value higher than that conventionally available and high reliability. The thin-film capacitor of the present invention comprises a dielectric thin film and electrodes opposing each other through the dielectric thin film interposed therebetween; wherein the dielectric thin film contains a perovskite-type composite oxide having a composition expressed by the following chemical formula (1), Mn, and at least one kind of element M selected from the group consisting of V, Nb, and Ta; wherein the dielectric thin film has an Mn content of 0.05 to 0.45 mol with respect to 100 mol of the composite oxide; and wherein the dielectric thin film has a total element M content of 0.05 to 0.

Abstract: The present invention provides a method for manufacturing a dielectric element in which a dielectric film is formed by a chemical solution deposition method, with enhanced tolerance of the dielectric film of wet processes. A method for manufacturing a dielectric element comprises a process of heating a film of a solution of a precursor on a metal layer in an oxidizing atmosphere, to form a calcined film comprising a dielectric material generated from the precursor, and a process of annealing the calcined film to form a dielectric film comprising the dielectric material that has been crystallized. The dielectric material is a metal oxide which forms a perovskite-structure crystal having A sites and B sites. The solution of the precursor comprises an element occupying A sites and an element occupying B sites in the dielectric film, at a molar ratio of the element occupying A sites to the element occupying B sites of 0.85 or higher and 1.00 or lower.