Patents by Inventor Naotoshi Matsuda
Naotoshi Matsuda has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Patent number: 11563155Abstract: According to one embodiment, a white light source includes a combination of a light emitting diode and phosphors. One of the phosphors is at least a cerium activated yttrium aluminum garnet-based phosphor. There is no light emission spectrum peak at which a ratio of a largest maximum value to a minimum value is greater than 1.9. The largest maximum value is largest among at least one maximum value present in a wavelength range of 400 nm to 500 nm in a light emission spectrum of white light emitted from the white light source. The minimum value is adjacent to the largest maximum value in a longer wavelength side of the light emission spectrum.Type: GrantFiled: January 29, 2021Date of Patent: January 24, 2023Assignee: Seoul Semiconductor Co., Ltd.Inventors: Tatsunori Itoga, Ryoji Tsuda, Naotoshi Matsuda, Yoshitaka Funayama
-
Patent number: 11084979Abstract: A phosphor according to an embodiment is a europium-activated alkaline-earth chloroapatite phosphor having a composition expressed by a composition formula: (M1-xEux)5(PO4)3Cl, where M is an alkaline-earth element containing at least Sr and Ba, x is an atomic ratio satisfying 0.04?x?0.2. In the phosphor of this embodiment, absorptance of light at a wavelength of 400 nm is 90% or more, and absorptance of light at a wavelength of 650 nm is 2% or less.Type: GrantFiled: April 4, 2019Date of Patent: August 10, 2021Assignee: Toshiba Materials Co., Ltd.Inventors: Naotoshi Matsuda, Tatsunori Itoga, Masahiko Yamakawa, Hirofumi Takemura, Yasuhiro Shirakawa
-
Publication number: 20210151638Abstract: According to one embodiment, a white light source includes a combination of a light emitting diode and phosphors. One of the phosphors is at least a cerium activated yttrium aluminum garnet-based phosphor. There is no light emission spectrum peak at which a ratio of a largest maximum value to a minimum value is greater than 1.9. The largest maximum value is largest among at least one maximum value present in a wavelength range of 400 nm to 500 nm in a light emission spectrum of white light emitted from the white light source. The minimum value is adjacent to the largest maximum value in a longer wavelength side of the light emission spectrum.Type: ApplicationFiled: January 29, 2021Publication date: May 20, 2021Applicants: KABUSHIKI KAISHA TOSHIBA, TOSHIBA MATERIALS CO., LTD.Inventors: Tatsunori ITOGA, Ryoji TSUDA, Naotoshi MATSUDA, Yoshitaka FUNAYAMA
-
Patent number: 10957826Abstract: According to one embodiment, a white light source includes a combination of a light emitting diode and phosphors. One of the phosphors is at least a cerium activated yttrium aluminum garnet-based phosphor. There is no light emission spectrum peak at which a ratio of a largest maximum value to a minimum value is greater than 1.9. The largest maximum value is largest among at least one maximum value present in a wavelength range of 400 nm to 500 nm in a light emission spectrum of white light emitted from the white light source. The minimum value is adjacent to the largest maximum value in a longer wavelength side of the light emission spectrum.Type: GrantFiled: November 20, 2018Date of Patent: March 23, 2021Assignees: Kabushiki Kaisha Toshiba, Toshiba Materials Co., Ltd.Inventors: Tatsunori Itoga, Ryoji Tsuda, Naotoshi Matsuda, Yoshitaka Funayama
-
Patent number: 10858583Abstract: A phosphor of an embodiment has a composition represented by a composition formula: NaxRMySzOa, where R represents at least one element selected from the group consisting of Y, La, Gd, and Lu, M represents at least one element selected from the group consisting of Bi, Ce, Eu, and Pr, x is an atomic ratio satisfying 0.93<x<1.07, y is an atomic ratio satisfying 0.00002<y<0.01, z is an atomic ratio satisfying 1.9<z<2.1, and a is an atomic ratio satisfying 0.001<a<0.05.Type: GrantFiled: July 2, 2018Date of Patent: December 8, 2020Assignees: Kabushiki Kaisha Toshiba, Toshiba Materials Co., Ltd.Inventors: Daichi Usui, Hirofumi Takemura, Naotoshi Matsuda
-
Publication number: 20190233725Abstract: A phosphor according to an embodiment is a europium-activated alkaline-earth chloroapatite phosphor having a composition expressed by a composition formula: (M1-xEux)5(PO4)3Cl, where M is an alkaline-earth element containing at least Sr and Ba, x is an atomic ratio satisfying 0.04?x?0.2. In the phosphor of this embodiment, absorptance of light at a wavelength of 400 nm is 90% or more, and absorptance of light at a wavelength of 650 nm is 2% or less.Type: ApplicationFiled: April 4, 2019Publication date: August 1, 2019Applicants: KABUSHIKI KAISHA TOSHIBA, TOSHIBA MATERIALS CO., LTD.Inventors: Naotoshi MATSUDA, Tatsunori Itoga, Masahiko Yamakawa, Hirofumi Takemura, Yasuhiro Shirakawa
-
Publication number: 20190088833Abstract: According to one embodiment, a white light source includes a combination of a light emitting diode and phosphors. One of the phosphors is at least a cerium activated yttrium aluminum garnet-based phosphor. There is no light emission spectrum peak at which a ratio of a largest maximum value to a minimum value is greater than 1.9. The largest maximum value is largest among at least one maximum value present in a wavelength range of 400 nm to 500 nm in a light emission spectrum of white light emitted from the white light source. The minimum value is adjacent to the largest maximum value in a longer wavelength side of the light emission spectrum.Type: ApplicationFiled: November 20, 2018Publication date: March 21, 2019Applicants: KABUSHIKI KAISHA TOSHIBA, TOSHIBA MATERIALS CO., LTD.Inventors: Tatsunori ITOGA, Ryoji TSUDA, Naotoshi MATSUDA, Yoshitaka FUNAYAMA
-
Publication number: 20180305615Abstract: A phosphor of an embodiment has a composition represented by a composition formula: NaxRMySzOa, where R represents at least one element selected from the group consisting of Y, La, Gd, and Lu, M represents at least one element selected from the group consisting of Bi, Ce, Eu, and Pr, x is an atomic ratio satisfying 0.93<x<1.07, y is an atomic ratio satisfying 0.00002<y<0.01, z is an atomic ratio satisfying 1.9<z<2.1, and a is an atomic ratio satisfying 0.001<a<0.05.Type: ApplicationFiled: July 2, 2018Publication date: October 25, 2018Applicants: KABUSHIKI KAISHA TOSHIBA, TOSHIBA MATERIALS CO., LTD.Inventors: Daichi USUI, Hirofumi TAKEMURA, Naotoshi MATSUDA
-
Patent number: 10020427Abstract: The present invention provides a red-light emitting phosphor that exhibits high luminous efficacy and emits light when excited by light having an emission peak in the blue region; and a method for manufacturing said phosphor. The phosphor represented by general formula (A): a(Si1-x-y,Tix,Mny)Fb and also characterized in that the half-band width of a diffraction pattern attributed to the (400) plane is not less than 0.2° determined by X-ray powder diffractometry. This phosphor can be manufactured by preparing a reaction solution consisting of an aqueous solution containing potassium permanganate and hydrogen fluoride, immersing a silicon source in said reaction solution, and reacting them for 20 to 80 minutes.Type: GrantFiled: September 9, 2015Date of Patent: July 10, 2018Assignees: KABUSHIKI KAISHA TOSHIBA, TOSHIBA MATERIALS CO., LTD.Inventors: Ryosuke Hiramatsu, Keiko Albessard, Naotoshi Matsuda, Masahiro Kato
-
Patent number: 9954146Abstract: The present invention provides a red-light emitting phosphor having high luminous efficacy and also a manufacturing method thereof. The phosphor is a red-light emitting phosphor mainly comprising potassium fluorosilicate and having a basic surface composition represented by the formula (A): KaSiFb. The disclosed phosphor is characterized by being activated by manganese and also characterized in that the amount of manganese on the surface is not more than 0.2 mol % based on the total amount of all the elements on the surface. This phosphor can be manufactured by washing with a weak acid a product obtained by placing a silicon source to react in contact with a reaction solution containing potassium permanganate.Type: GrantFiled: September 10, 2015Date of Patent: April 24, 2018Assignees: KABUSHIKI KAISHA TOSHIBA, TOSHIBA MATERIALS CO., LTDInventors: Ryosuke Hiramatsu, Keiko Albessard, Naotoshi Matsuda, Masahiro Kato
-
Publication number: 20150380614Abstract: The present invention provides a red-light emitting phosphor that exhibits high luminous efficacy and emits light when excited by light having an emission peak in the blue region; and a method for manufacturing said phosphor. The phosphor represented by general formula (A): a(Si1-x-y,Tix,Mny)Fb and also characterized in that the half-band width of a diffraction pattern attributed to the (400) plane is not less than 0.2° determined by X-ray powder diffractometry. This phosphor can be manufactured by preparing a reaction solution consisting of an aqueous solution containing potassium permanganate and hydrogen fluoride, immersing a silicon source in said reaction solution, and reacting them for 20 to 80 minutes.Type: ApplicationFiled: September 9, 2015Publication date: December 31, 2015Applicants: KABUSHIKI KAISHA TOSHIBA, TOSHIBA MATERIALS CO., LTD.Inventors: Ryosuke HIRAMATSU, Keiko ALBESSARD, Naotoshi MATSUDA, Masahiro KATO
-
Publication number: 20150380613Abstract: The present invention provides a red-light emitting phosphor having high luminous efficacy and also a manufacturing method thereof. The phosphor is a red-light emitting phosphor mainly comprising potassium fluorosilicate and having a basic surface composition represented by the formula (A): KaSiFb. The disclosed phosphor is characterized by being activated by manganese and also characterized in that the amount of manganese on the surface is not more than 0.2 mol % based on the total amount of all the elements on the surface. This phosphor can be manufactured by washing with a weak acid a product obtained by placing a silicon source to react in contact with a reaction solution containing potassium permanganate.Type: ApplicationFiled: September 10, 2015Publication date: December 31, 2015Applicants: KABUSHIKI KAISHA TOSHIBA, TOSHIBA MATERIALS CO., LTD.Inventors: Ryosuke HIRAMATSU, Keiko ALBESSARD, Naotoshi MATSUDA, Masahiro KATO
-
Patent number: 9187693Abstract: The present embodiments provide a europium-activated oxynitride phosphor and a production method thereof. This phosphor emits red luminescence having a peak at 630 nm or longer and can be produced by use of inexpensive oxides as raw materials containing alkaline earth metals such as strontium. The oxynitride phosphor is activated by a divalent europium and represented by the formula (1): (M1-xEux)AlaSibOcNdCe??(1). In the formula, M is an alkaline earth metal, and x, a, b, c, d and e are numbers satisfying the conditions of 0<x<0.2, 1.3?a?1.8, 3.5?b?4, 0.1?c?0.3, 6.7?d?7.2 and 0.01?e?0.1, respectively.Type: GrantFiled: September 11, 2012Date of Patent: November 17, 2015Assignee: KABUSHIKI KAISHA TOSHIBAInventors: Naotoshi Matsuda, Yumi Fukuda, Keiko Albessard, Masahiro Kato, Iwao Mitsuishi
-
Patent number: 9068116Abstract: According to one embodiment, the luminescent material emits light with an emission peak within a wavelength range of 490 to 580 nm when excited with light having a wavelength range of 250 to 500 nm and includes a particle containing a Sr3Si13Al3O2N21-based crystal activated by Eu. The particle includes an outer region which is within a depth of 5 nm from a surface of the particle and an inner region which is deeper than the outer region. The outer region and the inner region satisfy a ratio Oouter/Oinner of 1.0 to 3.8. Oouter is an average of oxygen concentration in the outer region and Oinner is an average of oxygen concentration in the inner region.Type: GrantFiled: February 28, 2012Date of Patent: June 30, 2015Assignee: KABUSHIKI KAISHA TOSHIBAInventors: Masahiro Kato, Yumi Fukuda, Naotoshi Matsuda
-
Patent number: 9048399Abstract: Disclosed is a white light emitting device including a semiconductor light emitting element configured to emit near ultraviolet light having a peak wavelength ranging from 380 to 410 nm, a first phosphor layer and a second phosphor layer. The first phosphor layer contains a blue-emitting phosphor configured to emit blue light by the near ultraviolet light, and a red-emitting phosphor activated by trivalent europium and configured to emit red light by the near ultraviolet light. The second phosphor layer contains a green-emitting phosphor configured to emit green light by the near ultraviolet light. The semiconductor light emitting element, the first phosphor layer and the second phosphor layer are laminated in this order to emit white light.Type: GrantFiled: March 1, 2011Date of Patent: June 2, 2015Assignee: KABUSHIKI KAISHA TOSHIBAInventors: Naotoshi Matsuda, Iwao Mitsuishi
-
Patent number: 9022591Abstract: According to one embodiment, the luminescent material exhibits a luminescence peak in a wavelength ranging from 490 to 580 nm when excited with light having an emission peak in a wavelength ranging from 250 to 500 nm. The luminescent material has a diffraction peak intensity of the largest peak detected at 2?=30.1-31.1° that is higher than the diffraction peak intensity of the peak detected at 2?=25.0-26.0° in X-ray diffraction by the Bragg-Brendano method using Cu-K? line and its composition is represented by (Sr1?xEux)3?yAl3+zSi13?zO2+uN21?w (a part of the Sr may be substituted by at least one selected from Ba, Ca, Mg and Na, 0<x?1, ?0.1?y?0.3, ?3?z??0.52, and ?1.5?u??0.3, ?3<u?w?1).Type: GrantFiled: March 15, 2013Date of Patent: May 5, 2015Assignee: Kabushiki Kaisha ToshibaInventors: Yumi Fukuda, Masahiro Kato, Naotoshi Matsuda, Keiko Albessard
-
Patent number: 8987986Abstract: The fluorescent substance according to the present disclosure emits luminescence with a peak in the wavelength range of 500 to 600 nm under excitation by light with a peak in the wavelength range of 250 to 500 nm, and has an optical absorption coefficient ?560nm of 4×10?5 or less at 560 nm. The substance is represented by the following formula (1): (M1-xCex)2yAlzSi10-zOuNw??(1). In the formula, M is a metal element selected from the group consisting of Ba, Sr, Ca, Mg, Li, Na and K; and x, y, z, u and w are variables satisfying the conditions of 0<x?1, 0.8?y?1.1, 2?z?3.5, u?1, 1.8?z?u and 13?u+w?15, respectively.Type: GrantFiled: March 18, 2013Date of Patent: March 24, 2015Assignee: Kabushiki Kaisha ToshibaInventors: Yumi Fukuda, Naotoshi Matsuda
-
Patent number: 8974697Abstract: According to one embodiment, the luminescent material shows a luminescence peak in a wavelength range of 570 to 670 nm when excited with light having an emission peak in a wavelength range of 250 to 520 nm. The luminescent material includes a host material having a crystal structure substantially same as the crystal structure of Sr2Si7Al3ON13. The host material is activated by Eu, and includes Sr and Ca to satisfy a relationship of 0.008?MCa/(MSr+MCa)?0.114, where MCa is a number of moles of Ca and MSr is a number of moles of Sr.Type: GrantFiled: August 31, 2012Date of Patent: March 10, 2015Assignee: Kabushiki Kaisha ToshibaInventors: Keiko Albessard, Masahiro Kato, Yumi Fukuda, Iwao Mitsuishi, Takahiro Sato, Shigeya Kimura, Aoi Okada, Naotoshi Matsuda, Ryosuke Hiramatsu, Yasushi Hattori, Kunio Ishida, Hironori Asai
-
Patent number: 8937328Abstract: A light emitting device includes a light emitting element that emits light having a wavelength of 250 nm to 500 nm and a fluorescent layer that is disposed on the light emitting element. The fluorescent layer includes a phosphor having a composition expressed by the equation, ((M1?x1Eux1)3?ySi13?zAl3+zO2+uN21?w), and an average particle diameter of 12 ?m or more, wherein in the equation, M is an element that is selected from IA group elements, IIA group elements, IIIA group elements, IIIB group elements except Al, rare-earth elements, and IVB group elements, and x1, y, z, u, and w satisfy each of the inequalities simultaneously, that is to say each of the following inequalities is satisfied by the choice of values of the identified paramaters within the noted ranges of 0<x1<1, ?0.1<y<0.3, ?3<z?1, ?3<u?w?1.5, 2<u, w<21.Type: GrantFiled: August 22, 2011Date of Patent: January 20, 2015Assignee: Kabushiki Kaisha ToshibaInventors: Iwao Mitsuishi, Yumi Fukuda, Aoi Okada, Naotoshi Matsuda, Shinya Nunoue, Keiko Albessard, Masahiro Kato
-
Publication number: 20150008817Abstract: The embodiment provides a red light-emitting fluorescent substance represented by the following formula (1): (M1-xECx)aM1bAlOcNd??(1). In the formula (1), M is an element selected from the group consisting of IA group elements, IIA group elements, IIIA group elements, IIIB group elements, rare earth elements and IVA group elements; EC is an element selected from the group consisting of Eu, Ce, Mn, Tb, Yb, Dy, Sm, Tm, Pr, Nd, Pm, Ho, Er, Cr, Sn, Cu, Zn, As, Ag, Cd, Sb, Au, Hg, Tl, Pb, Bi and Fe; M1 is different from M and is selected from the group consisting of tetravalent elements; and x, a, b, c and d are numbers satisfying the conditions of 0<x<0.2, 0.55<a<0.80, 2.10<b<3.90, 0<c?0.25 and 4<d<5, respectively. This substance emits luminescence having a peak in the wavelength range of 620 to 670 nm when excited by light of 250 to 500 nm.Type: ApplicationFiled: September 19, 2014Publication date: January 8, 2015Applicant: KABUSHIKI KAISHA TOSHIBAInventors: Aoi OKADA, Yumi Fukuda, Naotoshi Matsuda, Iwao Mitsuishi, Shinya Nunoue, Keiko Albessard, Masahiro Kato