Abstract: A copolymer including a structural unit represented by Chemical Formula 1 wherein the copolymer is capable of improving luminous efficiency and durability, particularly, an improvement in luminescence life-span, of an electroluminescence device, particularly a quantum dot electroluminescence device.

Abstract: As a technology capable of improving the durability of an electroluminescent device, for example, luminescence lifespan, a polymeric compound including a structural unit represented by Chemical Formula 1, or a structural unit represented by Chemical Formula 1 and a structural unit represented by Chemical Formula 2, and an electroluminescent device material or electroluminescent device including the same are provided: In Chemical Formula 1 and Chemical Formula 2, R11 to R14 are not the same as R41 to R44.

Abstract: A polymer including a structural unit represented by Chemical Formula 1, an electroluminescence device material including the polymer, an electroluminescence device including the polymer or the electroluminescence device material, and an electronic device including the electroluminescence device are provided: In Chemical Formula 1, the definition of each substituent is the same as described in the specification.

Abstract: As a means for providing an electroluminescent device capable of achieving high luminance, high efficiency, and at the same time excellent device life-span, a polymer having an overlap index of greater than or equal to about 0.00001 and less than or equal to about 1.

Abstract: A device includes a first electrode and a second electrode, an active layer between the first electrode and the second electrode and a plurality of auxiliary layers between the first electrode and the active layer. The auxiliary layers include first and second auxiliary layers, the first auxiliary layer proximate to the active layer, the second auxiliary layer proximate to the second electrode. An energy level of the active layer, an energy level of the first auxiliary layer, an energy level of the second auxiliary layer, and a work function of the first electrode become deeper sequentially or shallower sequentially.

Abstract: Provided is a compound represented by Chemical Formula 1 capable of manufacturing an EL device by inkjet printing. In Chemical Formula 1, n is an integer of greater than or equal to 3 and less than or equal to 10, X is a group represented by Chemical Formula 2 and a plurality of X's may be the same or different from each other, and Y is a group represented by Chemical Formula 3 and a plurality of Y's may be the same or different from each other.

Abstract: Disclosed is a copolymer including a structural unit represented by Chemical Formula 1 capable of improving performance (particularly durability) of an electroluminescent device.

Abstract: A copolymer, including a structural unit represented by Chemical Formula 1, a structural unit represented by Chemical Formula 2, or a combination thereof: wherein R1, R2, R3, X1, X2, and Ar1 are as provided herein.

Abstract: A copolymer including a structural unit represented by Chemical Formula 1 wherein the copolymer is capable of improving luminous efficiency and durability, particularly, an improvement in luminescence life-span, of an electroluminescence device, particularly a quantum dot electroluminescence device.

Abstract: Provided are a p-type organic semiconductor represented by Chemical Formula (1), which has improved thermal resistance and may detect near-infrared light, and a photoelectric conversion film, a photoelectric conversion device, and an image sensor including the same: In Chemical Formula (1), R1 and R2 are independently a substituted or unsubstituted C1 to C30 alkyl group, and R3 to R26 are independently a hydrogen atom, a deuterium atom, a substituted or unsubstituted alkyl group, a substituted or unsubstituted aryl group, a substituted or unsubstituted alkoxy group, a substituted or unsubstituted alkylthio group, a substituted or unsubstituted aryloxy group, a substituted or unsubstituted arylthio group, an oxy group substituted with a substituted or unsubstituted heterocyclic group, a thio group substituted with a substituted or unsubstituted heterocyclic group, or a substituted or unsubstituted amino group.

Abstract: An organic electroluminescent (EL) device having improved emission efficiency and emission lifetime. An embodiment of the organic EL device of the present disclosure includes a plurality of hole transport layers between an anode and an emission layer. The plurality of the hole transport layers may include an anode-side hole transport layer, a middle hole transport layer, and an emission layer-side hole transport layer.

Abstract: An imaging device includes a photoelectric conversion device including a sequential stack of an anode, a hole transport buffer layer, a photoelectric conversion layer, an electron transport buffer layer, and a cathode. The photoelectric conversion layer includes a p-type organic semiconductor and an n-type organic semiconductor. The electron transport buffer layer includes a compound represented by General Formula (1), and the p-type organic semiconductor includes a compound represented by General Formula (2): In General Formulas (1) and (2), Ar, R1 to R4, Ar3, R1 to R3, Ar1 and Ar2, and G1 and G2 are as defined in the specification.

Abstract: A device includes a first electrode and a second electrode, an active layer between the first electrode and the second electrode and a plurality of auxiliary layers between the first electrode and the active layer. The auxiliary layers include first and second auxiliary layers, the first auxiliary layer proximate to the active layer, the second auxiliary layer proximate to the second electrode. An energy level of the active layer, an energy level of the first auxiliary layer, an energy level of the second auxiliary layer, and a work function of the first electrode become deeper sequentially or shallower sequentially.

Abstract: Provided is a photoelectric conversion film having sufficient sensitivity to near-infrared light and capable of reducing dark current. The photoelectric conversion film includes a p-type organic semiconductor, which is a near-infrared light absorbing colorant. The photoelectric conversion film has an absorption coefficient of light of less than or equal to 0.13 with respect to the wavelength of 1,000 nm at a thickness of 100 nm of the film.

Abstract: Provided are a p-type organic semiconductor represented by Chemical Formula (1), which has improved thermal resistance and may detect near-infrared light, and a photoelectric conversion film, a photoelectric conversion device, and an image sensor including the same: In Chemical Formula (1), R1 and R2 are independently a substituted or unsubstituted C1 to C30 alkyl group, and R3 to R26 are independently a hydrogen atom, a deuterium atom, a substituted or unsubstituted alkyl group, a substituted or unsubstituted aryl group, a substituted or unsubstituted alkoxy group, a substituted or unsubstituted alkylthio group, a substituted or unsubstituted aryloxy group, a substituted or unsubstituted arylthio group, an oxy group substituted with a substituted or unsubstituted heterocyclic group, a thio group substituted with a substituted or unsubstituted heterocyclic group, or a substituted or unsubstituted amino group.

Abstract: An organic electroluminescent (EL) device having improved emission efficiency and emission lifetime. An embodiment of the organic EL device of the present disclosure includes a plurality of hole transport layers between an anode and an emission layer. The plurality of the hole transport layers may include an anode-side hole transport layer, a middle hole transport layer, and an emission layer-side hole transport layer.

Abstract: Exemplary embodiments of the inventive concept provide a substrate for forming a single crystal layer with a lyophilic area having a high affinity to a single crystal material to maintain a position of the solution of the single crystal material, and a crystal growth inducing rail part formed in a shape of a line in the lyophilic area and having a higher affinity to the solution of the single crystal material than the lyophilic area.

Abstract: An organic light emitting diode (OLED) display is disclosed. The display has high contrast and displays good black color by removing or decreasing influence of ambient light. The display includes an organic electro-luminescence emission layer and a plurality of pixels respectively including an active lighting layer disposed on the organic electro-luminescence emission layer. In the pixels, when the organic electro-luminescence emission layer emits light, light transmittance of the active lighting layer is decreased.

Abstract: An organic light emitting diode (OLED) display is disclosed. The display has high contrast and displays good black color by removing or decreasing influence of ambient light. The display includes an organic electro-luminescence emission layer and a plurality of pixels respectively including an active lighting layer disposed on the organic electro-luminescence emission layer. In the pixels, when the organic electro-luminescence emission layer emits light, light transmittance of the active lighting layer is decreased.

Abstract: An organic semiconductor light emitting device wherein efficiency of injecting a carrier from an organic semiconductor active layer to an organic semiconductor light emitting part is improved. The organic semiconductor light emitting device includes the organic semiconductor active layer having a source area and a drain area set at an interval of a channel length, a source electrode joined to the source area, the organic semiconductor light emitting part joined to the drain area, a drain electrode joined to the organic semiconductor light emitting part, and a gate electrode arranged to face the organic semiconductor active layer with an insulating film interposed. The organic semiconductor light emitting part includes an organic semiconductor light emitting layer which receives electrons and holes from the drain electrode and holes from the drain electrode and the organic semiconductor active layer and generates light by recombination of the electrons and the holes.