Abstract: An etching method, having the step of applying an etching liquid onto a TiN-containing layer in a semiconductor substrate thereby etching the TiN-containing layer, the etching liquid comprising water, and a basic compound and an oxidizing agent in water thereof to be within the range of pH from 8.5 to 14, and the TiN-containing layer having a surface oxygen content from 0.1 mol % to 10 mol %.

Abstract: An etching method containing, at the time of processing a substrate having a first layer containing titanium nitride (TiN) and a second layer containing a transition metal, selecting a substrate in which a surface oxygen content of the first layer is from 0.1 to 10% by mole, and applying an etching liquid containing a hydrofluoric acid compound and an oxidizing agent to the substrate and thereby removing the first layer.

Abstract: Provided is a near-infrared absorptive compositions capable of reducing unevenness in the coated surface profile and variation in near-infrared absorptive ability when the near-infrared absorptive compositions are formed into films. The near-infrared absorptive composition comprises a copper complex and a solvent, wherein the near-infrared absorptive composition has a solid content of 10 to 90% by mass and the solvent has a boiling point of 90 to 200° C.

Abstract: The invention is directed to a colored composition containing a coloring agent and a resin, wherein a content of the coloring agent to a total solid content of the colored composition is 50% by weight or more and a solid content acid value of the resin is more than 80 mg KOH/g, and a method of producing a color filter including forming a first colored layer containing a first colored composition and patterning with dry etching so as to from a through-hole group in the first colored layer, wherein the first colored composition is the colored composition as defined herein.

Abstract: Provided are a colored composition which can maintain good light fastness even when placed under an environment having a low oxygen concentration for a long period of time, a cured film, a color filter, a method for producing a color filter, a solid-state image sensor, and an image display device. The colored composition includes a dye multimer (A) and a solvent (B), in which the dye multimer (A) has a partial structure derived from a xanthene dye having a cationic moiety, and also has an anionic moiety, and the content of water in the colored composition is 0.01% by mass to 3.0% by mass.

Abstract: Provided are a colored composition which can maintain good light fastness even when placed under an environment having a low oxygen concentration for a long period of time, a cured film, a color filter, a method for producing a color filter, a solid-state image sensor, and an image display device. The colored composition includes a dye multimer (A) and a solvent (B), in which the dye multimer (A) has a partial structure derived from a xanthene dye having a cationic moiety, and also has an anionic moiety, and the content of water in the colored composition is 0.01% by mass to 3.0% by mass.

Abstract: Provided are a colored composition which enables the formation of a pattern having excellent heat resistance and excellent solubility in solvents and has inhibited color migration; and a cured film, a color filter, a method for producing a color filter, a solid-state image sensor, and an image display device, each of which uses the colored composition. The colored composition includes a polymer anion having a repeating unit containing a weakly nucleophilic anionic structure, and a dye having a cationic structure, in which the weakly nucleophilic anionic structure represents an anionic structure produced by dissociating an organic acid having a lower pKa value than the pKa value of sulfuric acid.

Abstract: Provided are a method for producing a dye multimer having excellent heat resistance, and a coloring composition including a dye multimer obtained by the production method. The method for producing a dye multimer includes reacting a compound having a dye structure with a polymer.

Abstract: Provided are a coloring composition having improved heat resistance; and a cured film, a color filter, a method for producing a color filter, and a solid-state imaging element and an image display device, each of which uses the coloring composition. The coloring composition includes a dye (A) represented by the following General Formula (I) and a polymerizable compound (B). In General Formula (I), Q represents an (m+n)-valent linking group, R represents a substituent, represents a dye residue, m represents an integer of 0 to 6, n represents an integer of 2 to 8, and (m+n) represents an integer of 2 to 8. In the case where m is 2 or more, a plurality of R's may be different from each other, and in the case where n is 2 or more, a plurality of D's may be different from each other.

Abstract: Provided is a pigment multimer whereby a pattern can be appropriately formed during formation of a pattern. Further, provided are a coloring composition using the pigment multimer; and a cured film, a color filter, a method for manufacturing a color filter, a solid-state imaging element, and an image display device, each of which uses the coloring composition. The pigment multimer (A) has a non-nucleophilic counter anion.

Abstract: There is provided an etching method of a semiconductor substrate that includes a first layer containing germanium (Ge) and a second layer containing at least one specific metal element selected from nickel platinum (NiPt), titanium (Ti), nickel (Ni), and cobalt (Co), the method including: bringing an etching solution which contains a non-halogen acidic compound into contact with the second layer and selectively removing the second layer.

Abstract: An etching liquid that processes a substrate having a first layer containing titanium nitride (TiN) and a second layer containing a transition metal and thereby removes selectively the first layer, wherein the etching liquid contains a fluorine-containing compound, an oxidizing agent and an organic silicon compound.

Abstract: An etching method containing, at the time of processing a substrate having a first layer containing titanium nitride (TiN) and a second layer containing a transition metal, selecting a substrate in which a surface oxygen content of the first layer is from 0.1 to 10% by mole, and applying an etching liquid containing a hydrofluoric acid compound and an oxidizing agent to the substrate and thereby removing the first layer.

Abstract: An etching liquid for processing a substrate having a first layer containing titanium nitride (TiN) and a second layer containing at least one metal selected from transition metals belonging to group 3 to group 11 of the periodic table thereby removing the first layer selectively, wherein the etching liquid contains a hexafluorosilicic acid compound, and an oxidizing agent of which concentration is 0.05% by mass or more and less than 10% by mass.

Abstract: Provided is a near-infrared absorptive compositions capable of reducing unevenness in the coated surface profile and variation in near-infrared absorptive ability when the near-infrared absorptive compositions are formed into films. The near-infrared absorptive composition comprises a copper complex and a solvent, wherein the near-infrared absorptive composition has a solid content of 10 to 90% by mass and the solvent has a boiling point of 90 to 200° C.

Abstract: An etching method, having the step of applying an etching liquid onto a TiN-containing layer in a semiconductor substrate thereby etching the TiN-containing layer, the etching liquid comprising water, and a basic compound and an oxidizing agent in water thereof to be within the range of pH from 8.5 to 14, and the TiN-containing layer having a surface oxygen content from 0.1 mol % to 10 mol %.

Abstract: A method of etching a semiconductor substrate, having the steps of: preparing an etching liquid by mixing a first liquid with a second liquid to be in the range of pH from 8.5 to 14, the first liquid containing a basic compound, the second liquid containing an oxidizing agent; and then applying the etching liquid to a semiconductor substrate on a timely basis for etching a Ti-containing layer in or on the semiconductor substrate.

Abstract: This disclosure relates to a method for manufacturing a color filter being capable of suppressing a surface of a colored pattern from being rough in a penalization treatment, a color filter and a solid-state imaging device.

Abstract: The invention is directed to a colored composition for forming a green color filter, containing a color pigment, wherein a content of the color pigment to a total solid content of the colored composition is 60% by weight or more, and a layer having a thickness of 0.6 ?m formed from the colored composition has light transmittance of 80% or more at a wavelength of 550 nm and light transmittance of 50% or less at a wavelength of 450 nm, and a method of producing a color filter including (A) forming a first colored layer containing a first colored composition and (B) patterning with dry etching so as to from a through-hole group in the first colored layer, wherein the first colored composition is the colored composition as defined herein.

Abstract: The invention is directed to a colored composition containing a coloring agent and a resin, wherein a content of the coloring agent to a total solid content of the colored composition is 50% by weight or more and a solid content acid value of the resin is more than 80 mg KOH/g, and a method of producing a color filter including forming a first colored layer containing a first colored composition and patterning with dry etching so as to from a through-hole group in the first colored layer, wherein the first colored composition is the colored composition as defined herein.