Patents by Inventor Naoya Kami

Naoya Kami has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor device and method for fabricating semiconductor device
    Patent number: 9842766
    Abstract: A semiconductor device according to an embodiment, includes a plurality of wires, a first dielectric film, and a second dielectric film. The plurality of wires are arranged above a semiconductor substrate so as to extend in a first direction and aligned via a first cavity. The first dielectric film has a plurality of portions arranged above the plurality of wires so as to extend in a second direction substantially perpendicular to the plurality of wires and aligned along the first direction via a second cavity leading to the first cavity. The second dielectric film is formed above the first dielectric film so as to cover the second cavity.
    Type: Grant
    Filed: January 28, 2015
    Date of Patent: December 12, 2017
    Assignee: TOSHIBA MEMORY CORPORATION
    Inventors: Masato Endo, Kazunori Masuda, Yukio Nishida, Naoya Kami, Yuuichi Tatsumi, Naoyuki Kondo
  • NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING NONVOLATILE SEMICONDUCTOR MEMORY DEVICE
    Publication number: 20160078940
    Abstract: According to one embodiment, a nonvolatile semiconductor memory device includes first word lines equipped with flag-like portions on one side of the block in the row direction and equipped with no flag-like portions on the other side of the block in the row direction, and second word lines equipped with no flag-like portions on the one side of the block in the row direction and equipped with flag-like portions on the other side of the block in the row direction.
    Type: Application
    Filed: February 6, 2015
    Publication date: March 17, 2016
    Applicant: Kabushiki Kaisha Toshiba
    Inventors: Naoya KAMI, Kazunori Masuda, Yuuichi Tatsumi, Naoyuki Kondo, Masato Endo, Yukio Nishida
  • SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING SEMICONDUCTOR DEVICE
    Publication number: 20160056067
    Abstract: A semiconductor device according to an embodiment, includes a plurality of wires, a first dielectric film, and a second dielectric film. The plurality of wires are arranged above a semiconductor substrate so as to extend in a first direction and aligned via a first cavity. The first dielectric film has a plurality of portions arranged above the plurality of wires so as to extend in a second direction substantially perpendicular to the plurality of wires and aligned along the first direction via a second cavity leading to the first cavity. The second dielectric film is formed above the first dielectric film so as to cover the second cavity.
    Type: Application
    Filed: January 28, 2015
    Publication date: February 25, 2016
    Applicant: Kabushiki Kaisha Toshiba
    Inventors: Masato ENDO, Kazunori Masuda, Yukio Nishida, Naoya Kami, Yuuichi Tatsumi, Naoyuki Kondo