Abstract: An electrostatic separation method includes: applying voltage between a lower electrode at a bottom portion of or in the raw material layer and an upper electrode above the raw material layer, generating an electric field between electrodes; fluidizing the raw material layer and bringing conductive particles and the lower electrode into contact in the raw material layer charging only the conductive particles wherein their polarity becomes the same as the lower electrode; generating polarity, the same as the upper electrode, by dielectric polarization on a conveyor belt downward-facing conveyance surface passing through a capture region above the raw material layer and under the upper electrode, the conveyance surface including a nonconductor; separates charged conductive particles from the raw material layer surface by electrostatic force and adhering conductive particles to the conveyor belt conveyance surface; and separating and collecting the particles from the conveyance surface that moved outside the ele

Abstract: A fabrication method of a thermal type infrared ray imaging device that includes forming a plurality of diodes in a single crystal silicon layer as first and second thermoelectric conversion parts constituting a thermoelectric conversion part; forming input and output wirings to be connected to a plurality of cells; forming a plurality of opening portions which expose the single crystal silicon substrate; forming a first photothermal conversion layer; and removing selectively a portion of the single crystal silicon substrate via the plurality of opening portions.

Abstract: A sensor device includes a sensor array in which infrared sensors are arrayed and a detection circuit connected to the output signal line of the sensor array. The detection circuit includes a capacitor having a charging circuit which is selectively driven, a sense amplifier circuit which detects and amplifies a change in sensor current flowing to the output signal line, a current-to-voltage conversion circuit which converts the output current from the sense amplifier circuit into a voltage, a discharging circuit which is controlled by the output voltage of the current-to-voltage conversion circuit to discharge the capacitor, and an output circuit which outputs the terminal voltage of the capacitor.

Abstract: A solid-state infrared imager comprises a matrix array of infrared sensing pixels which are formed as an imaging area on a semiconductor substrate and each of which contains a pn-junction thermoelectric converter element to sense incident infrared radiation, row selection lines each connected to the pixels of a corresponding row, signal lines each connected to the pixels of a corresponding column, a row selection circuit which selects and drives one of the row selection lines, and a signal readout circuit which reads out signal currents output to the signal lines from the pixels corresponding to the row selection line driven by the row selection circuit. Particularly, the signal readout circuit includes a signal line potential stabilizer which stabilizes the potential of the signal line to a constant level, and a current-voltage converter which converts the signal current flowing in a signal line to a signal voltage.

Abstract: A fabrication method of a thermal type infrared ray imaging device that includes forming a plurality of diodes in a single crystal silicon layer as first and second thermoelectric conversion parts constituting a thermoelectric conversion part; forming input and output wirings to be connected to a plurality of cells; forming a plurality of opening portions which expose the single crystal silicon substrate; forming a first photothermal conversion layer; and removing selectively a portion of the single crystal silicon substrate via the plurality of opening portions.

Abstract: A fabrication method of a thermal type infrared ray imaging device that includes forming a plurality of diodes in a single crystal silicon layer as first and second thermoelectric conversion parts constituting a thermoelectric conversion part; forming input and output wirings to be connected to a plurality of cells; forming a plurality of opening portions which expose the single crystal silicon substrate; forming a first photothermal conversion layer; and removing selectively a portion of the single crystal silicon substrate via the plurality of opening portions.

Abstract: A method for manufacturing an infrared sensor, including preparing a substrate including a supporting member made of single crystalline silicon, a first layer made of silicon oxide formed on the supporting member, and a second layer made of single crystalline silicon formed on the first layer, embedding a silicon oxide layer over the second layer, forming an infrared detection pixel in the second layer, the infrared detection pixel having a function of converting heat into an electric signal, fanning a supporting beam line including a U-shaped electric conductor on the silicon oxide layer, while forming a gate electrode of a MOS transistor of a peripheral circuit on the second layer, the gate electrode having an electric conductor with U-shaped cross section, forming an infrared absorption layer on the second layer, the infrared absorption layer having a function of converting an infrared ray into heat, and etching the second layer to form a hole for isolating the infrared detection pixel from of the substrat

Abstract: An infrared image sensor encompasses (a) a base body, (b) a plurality of signal lines disposed on the base body, (c) a plurality of address lines intersecting the signal lines, (d) a plurality of detector portions provided in the cross region of the signal lines and the address lines, each of the detector portions being connected between the corresponding signal line and the address line, each of the detector portions is configured to detect infrared-ray, (e) a plurality of supporting beams supporting each of the detector portions above the base body, and (f) a plurality of contactors configured to contact each of the detector portions with the base body thermally so as to transport thermal energy to be accumulated in each of the detector portions toward the base body.

Abstract: A supporting beam line for supporting, afloat in a cavity on a semiconductor substrate, an infrared detection pixel comprising an infrared absorption portion for absorbing an incident infrared ray and converting it into heat and a thermoelectric conversion portion for converting a temperature change caused by the heat generated in the infrared absorption portion into an electric signal is formed by a damascene metal on the same layer as the gate of a damascene metal gate MOS transistor to be used in a peripheral circuit. The supporting beam line comprises a conductor line with U-shaped cross section inside which a metal is filled.

Abstract: A supporting beam line for supporting, afloat in a cavity on a semiconductor substrate, an infrared detection pixel comprising an infrared absorption portion for absorbing an incident infrared ray and converting it into heat and a thermoelectric conversion portion for converting a temperature change caused by the heat generated in the infrared absorption portion into an electric signal is formed by a damascene metal on the same layer as the gate of a damascene metal gate MOS transistor to be used in a peripheral circuit. The supporting beam line comprises a conductor line with U-shaped cross section inside which a metal is filled.

Abstract: A method for manufacturing an infrared sensor, including preparing a substrate including a supporting member made of single crystalline silicon, a first layer made of silicon oxide formed on the supporting member, and a second layer made of single crystalline silicon formed on the first layer, embedding a silicon oxide layer over the second layer, forming an infrared detection pixel in the second layer, the infrared detection pixel having a function of converting heat into an electric signal, forming a supporting beam line including a U-shaped electric conductor on the silicon oxide layer, while forming a gate electrode of a MOS transistor of a peripheral circuit on the second layer, the gate electrode having an electric conductor with U-shaped cross section, forming an infrared absorption layer on the second layer, the infrared absorption layer having a function of converting an infrared ray into heat, and etching the second layer to form a hole for isolating the infrared detection pixel from of the substrat

Abstract: A solid-state infrared imager comprises a matrix array of infrared sensing pixels which are formed as an imaging area on a semiconductor substrate and each of which contains a pn-junction thermoelectric converter element to sense incident infrared radiation, row selection lines each connected to the pixels of a corresponding row, signal lines each connected to the pixels of a corresponding column, a row selection circuit which selects and drives one of the row selection lines, and a signal readout circuit which reads out signal currents output to the signal lines from the pixels corresponding to the row selection line driven by the row selection circuit. Particularly, the signal readout circuit includes a signal line potential stabilizer which stabilizes the potential of the signal line to a constant level, and a current-voltage converter which converts the signal current flowing in a signal line to a signal voltage.

Abstract: A solid-state infrared imager comprises a matrix array of infrared sensing pixels which are formed as an imaging area on a semiconductor substrate and each of which contains a pn-junction thermoelectric converter element to sense incident infrared radiation, row selection lines each connected to the pixels of a corresponding row, signal lines each connected to the pixels of a corresponding column, a row selection circuit which selects and drives one of the row selection lines, and a signal readout circuit which reads out signal currents output to the signal lines from the pixels corresponding to the row selection line driven by the row selection circuit. Particularly, the signal readout circuit includes a signal line potential stabilizer which stabilizes the potential of the signal line to a constant level, and a current-voltage converter which converts the signal current flowing in a signal line to a signal voltage.

Abstract: A supporting beam line for supporting, afloat in a cavity on a semiconductor substrate, an infrared detection pixel comprising an infrared absorption portion for absorbing an incident infrared ray and converting it into heat and a thermoelectric conversion portion for converting a temperature change caused by the heat generated in the infrared absorption portion into an electric signal is formed by a damascene metal on the same layer as the gate of a damascene metal gate MOS transistor to be used in a peripheral circuit. The supporting beam line comprises a conductor line with U-shaped cross section inside which a metal is filled.

Abstract: An infrared image sensor encompasses (a) a base body, (b) a plurality of signal lines disposed on the base body, (c) a plurality of address lines intersecting the signal lines, (d) a plurality of detector portions provided in the cross region of the signal lines and the address lines, each of the detector portions being connected between the corresponding signal line and the address line, each of the detector portions is configured to detect infrared-ray, (e) a plurality of supporting beams supporting each of the detector portions above the base body, and (f) a plurality of contactors configured to contact each of the detector portions with the base body thermally so as to transport thermal energy to be accumulated in each of the detector portions toward the base body.

Abstract: A thermal type infrared ray imaging device has a plurality of cells arranged on a substrate each having a photothermal conversion part which converts an infrared ray into heat, and a thermoelectric conversion part which is provided below the photothermal conversion part and which converts the heat generated by the photothermal conversion part into an electric signal, a selection part which selects some cells among the plurality of cells, and an output part which outputs the electric signal generated by the thermoelectric conversion part of the selected cells. The photothermal conversion part includes a first photothermal conversion layer and a second photothermal conversion layer provided over and apart from the first photothermal conversion layer, which converts an infrared ray within a waveband different from the waveband of the first photothermal conversion layer into heat.

Abstract: A thermal type infrared sensor and a method of manufacturing the same that have a high degree of freedom of structure and a low cost. An infrared ray detecting portion and a support leg are formed above flat plate-shape void formed inside of a semiconductor substrate, and a processing circuit section of a signal from a detecting portion is fabricated on the semiconductor substrate. Because the structure of the processing circuit section is not influenced by a substrate structure, characteristics are improved. Furthermore, the structure is simplified, and it is possible to reduce a manufacturing cost.

Abstract: A sensor device includes a sensor array in which infrared sensors are arrayed and a detection circuit connected to the output signal line of the sensor array. The detection circuit includes a capacitor having a charging circuit which is selectively driven, a sense amplifier circuit which detects and amplifies a change in sensor current flowing to the output signal line, a current-to-voltage conversion circuit which converts the output current from the sense amplifier circuit into a voltage, a discharging circuit which is controlled by the output voltage of the current-to-voltage conversion circuit to discharge the capacitor, and an output circuit which outputs the terminal voltage of the capacitor.

Abstract: An object of the present invention is to provide a high-sensitivity infrared sensor. According to the present invention, a support member for supporting a sensor portion in a cavity structure is formed to be remarkably thin as compared with a conventional structure, a sectional area of the support member is considerably reduced, heat conductance can remarkably be reduced and, as a result, the infrared sensor having a remarkably high sensitivity can be obtained. Moreover, according to the present invention, since an insulating layer of a support member area is etched, and a sacrifice silicon film is embedded in the area, an aspect ratio of an insulating layer RIE for forming a support leg is remarkably reduced. A manufacturing process is facilitated, a sectional area of the support leg is further reduced as a secondary effect, and the sensitivity of the infrared sensor can further be enhanced.

Abstract: An infrared sensor including a substrate, a plurality of infrared detection pixels arrayed on a substrate with each of the infrared detection pixels including an infrared absorption portion formed over the substrate and configured to absorb infrared radiation, a thermoelectric converter portion formed over the substrate and configured to convert a temperature change in the infrared absorption portion into an electrical signal, and support structures configured to support the thermoelectric converter portion and the infrared absorption portion over the substrate via a separation space, the support structures having conductive interconnect layers configured to deliver the electrical signal from the thermoelectric converter portion to the substrate.