Abstract: This invention provides a conductive paste and a method for producing a TOPCon solar cell, by which a TOPCon solar cell can be produced by a simple method, and additionally, a TOPCon solar cell can be constructed with excellent conversion efficiency. Specifically, the invention provides a conductive paste for use as a back electrode for TOPCon solar cells, the conductive paste comprising aluminum-silicon alloy particles, an organic vehicle, and a glass powder, the aluminum-silicon alloy particles having a silicon concentration of 25 wt % or more and 40 wt % or less.

Abstract: This invention provides a paste composition that enables a silicon germanium layer to be formed safely and easily, and a method for forming a silicon germanium layer safely and easily. The present invention provides a paste composition for forming a silicon germanium layer, the composition comprising aluminum and germanium, wherein the content of the germanium is more than 1 part by mass and 10000 parts by mass or less, per 100 parts by mass of the aluminum.

Abstract: Provided is a paste composition that enables the formation of a diffusion layer with a high concentration of n-type dopant element on a semiconductor substrate in a simple manner. The paste composition is intended to form a film on a semiconductor substrate. The paste composition contains an aluminum powder, a compound containing an n-type dopant element, a resin, and a solvent. The n-type dopant element is one, two, or more elements selected from the group consisting of phosphorus, antimony, arsenic, and bismuth. The content of the n-type dopant element in the n-type dopant element-containing compound is 1.5 parts by mass or more and 1000 parts by mass or less, per 100 parts by mass of aluminum contained in the aluminum powder.

Abstract: This invention provides a paste composition that enables a silicon germanium layer to be formed safely and easily, and a method for forming a silicon germanium layer safely and easily. The present invention provides a paste composition for forming a silicon germanium layer, the composition comprising aluminum and germanium, wherein the content of the germanium is more than 1 part by mass and 10000 parts by mass or less, per 100 parts by mass of the aluminum.

Abstract: Provided is a paste composition that enables the formation of a diffusion layer with a high concentration of n-type dopant element on a semiconductor substrate in a simple manner. The paste composition is intended to form a film on a semiconductor substrate. The paste composition contains an aluminum powder, a compound containing an n-type dopant element, a resin, and a solvent. The n-type dopant element is one, two, or more elements selected from the group consisting of phosphorus, antimony, arsenic, and bismuth. The content of the n-type dopant element in the n-type dopant element-containing compound is 1.5 parts by mass or more and 1000 parts by mass or less, per 100 parts by mass of aluminum contained in the aluminum powder.