Abstract: A main object of the present disclosure is to provide a reflection-type optical encoder scale capable of sufficiently reducing the reflectance on a low reflection region. The present disclosure achieves the object by providing a reflection-type optical encoder scale comprising a high reflection region and a low reflection region alternately placed on a substrate, wherein the low reflection region includes a low reflection portion including a metallic chromium film formed on the substrate, and a chromium oxide film and a chromium nitride film randomly formed on the metallic chromium film; and the high reflection region has higher reflectance of incident light from opposite side to the substrate of the reflection-type optical encoder scale, than the low reflection region.

Abstract: A film for semiconductor includes a support film, a second adhesive layer, a first adhesive layer and a bonding layer which are laminated together in this order. This film for semiconductor is configured so that it supports a semiconductor wafer laminated on the bonding layer thereof when the semiconductor wafer is diced and the bonding layer is selectively peeled off from the first adhesive layer when the semiconductor elements obtained by the dicing are picked up. This film for semiconductor is characterized in that an average thickness of the second adhesive layer is in the range of 20 to 100 ?m. This makes it possible to control cutting lines formed during the dicing so as to locate distal ends thereof within the first adhesive layer easily and reliably and to prevent defects which would be generated when the cutting lines come down to the support film.

Abstract: A film for use in manufacturing semiconductor devices of the present invention includes a bonding layer having a first surface and a second surface, a first adhesive layer bonding to the second surface of the bonding layer and a second adhesive layer bonding to the first adhesive layer at a side opposite to the bonding layer wherein the second adhesive layer has an outer peripheral portion extending beyond an outer peripheral edge of the first adhesive layer. Further, the film is used in dicing a semiconductor wafer in a state that the semiconductor wafer is bonded to the first surface of the bonding layer while a wafer ring is bonded to the outer peripheral portion of the second adhesive layer wherein the bonding force A1 (cN/25 mm) of the first adhesive layer to the bonding layer is smaller than the bonding force A2 (cN/25 mm) of the second adhesive layer to the wafer ring.

Abstract: A film for use in manufacturing semiconductor devices of the present invention includes a bonding layer having a first surface and a second surface, a first adhesive layer bonding to the second surface of the bonding layer and a second adhesive layer bonding to the first adhesive layer at a side opposite to the bonding layer wherein the second adhesive layer has an outer peripheral portion extending beyond an outer peripheral edge of the first adhesive layer. Further, the film is used in dicing a semiconductor wafer in a state that the semiconductor wafer is bonded to the first surface of the bonding layer while a wafer ring is bonded to the outer peripheral portion of the second adhesive layer wherein the bonding force A1 (cN/25 mm) of the first adhesive layer to the bonding layer is smaller than the bonding force A2 (cN/25 mm) of the second adhesive layer to the wafer ring.