Patents by Inventor Naoya Sako
Naoya Sako has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9711685Abstract: A sapphire substrate provided with a plurality of projections on a principal surface on which a nitride semiconductor is grown to form a nitride semiconductor light emitting element. The projections have a substantially triangular pyramidal-shape the projections having a plurality of side surfaces and a pointed top. The side surfaces have an inclination angle of between 53° and 59° from a bottom of the projections. The side surfaces are crystal-growth-suppressed surfaces on which a growth of the nitride semiconductor is suppressed relative to a portion of the principal surface located between adjacent projections. A bottom of the projections has a substantially triangular shape having three outwardly curved arc-shaped sides, and each of the side surfaces has a substantially triangular shape having vertexes located at the top of the projection and at both ends of a respective side of the bottom of the projection.Type: GrantFiled: April 11, 2016Date of Patent: July 18, 2017Assignee: NICHIA CORPORATIONInventors: Naoya Sako, Takashi Ohara, Yoshiki Inoue, Yuki Shibutani, Yoshihito Kawauchi, Kazuyuki Takeichi, Yasunori Nagahama
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Patent number: 9525103Abstract: The sapphire substrate has a principal surface for growing a nitride semiconductor to form a nitride semiconductor light emitting device and comprising a plurality of projections of the principal surface, wherein an outer periphery of a bottom surface of each of the projections has at least one depression. This depression is in the horizontal direction. The plurality of projections are arranged so that a straight line passes through the inside of at least any one of projections when the straight line is drawn at any position in any direction in a plane including the bottom surfaces of the plurality of projections.Type: GrantFiled: June 9, 2015Date of Patent: December 20, 2016Assignee: NICHIA CORPORATIONInventors: Junya Narita, Takuya Okada, Yohei Wakai, Yoshiki Inoue, Naoya Sako, Katsuyoshi Kadan
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Publication number: 20160300982Abstract: A sapphire substrate provided with a plurality of projections on a principal surface on which a nitride semiconductor is grown to form a nitride semiconductor light emitting element. The projections have a substantially triangular pyramidal-shape the projections having a plurality of side surfaces and a pointed top. The side surfaces have an inclination angle of between 53° and 59° from a bottom of the projections. The side surfaces are crystal-growth-suppressed surfaces on which a growth of the nitride semiconductor is suppressed relative to a portion of the principal surface located between adjacent projections. A bottom of the projections has a substantially triangular shape having three outwardly curved arc-shaped sides, and each of the side surfaces has a substantially triangular shape having vertexes located at the top of the projection and at both ends of a respective side of the bottom of the projection.Type: ApplicationFiled: April 11, 2016Publication date: October 13, 2016Applicant: NICHIA CORPORATIONInventors: Naoya SAKO, Takashi OHARA, Yoshiki INOUE, Yuki SHIBUTANI, Yoshihito KAWAUCHI, Kazuyuki TAKEICHI, Yasunori NAGAHAMA
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Patent number: 9337390Abstract: A method for manufacturing a sapphire substrate in which a plurality of projections are formed on a C-plane of the sapphire substrate by etching, includes: forming a patterned etching mask on the C-plane of the sapphire substrate; etching the sapphire substrate until the projections are formed, wherein each of the projections formed by the etching has a substantially triangular pyramidal-shape and has a plurality of side surfaces, a pointed top and a bottom, wherein the bottom of each of the projections has a substantially triangular shape having three outwardly curved arc-shaped sides. The projections are arranged on vertexes of a triangular lattice, and an orientation of the bottom of the projections conforms with an orientation that is rotated by about 30 degrees from an orientation of a triangle of the triangular lattice; and removing the etching mask from the sapphire substrate.Type: GrantFiled: January 9, 2015Date of Patent: May 10, 2016Assignee: NICHIA CORPORATIONInventors: Naoya Sako, Takashi Ohara, Yoshiki Inoue, Yuki Shibutani, Yoshihito Kawauchi, Kazuyuki Takeichi, Yasunori Nagahama
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Publication number: 20150270443Abstract: The sapphire substrate has a principal surface for growing a nitride semiconductor to form a nitride semiconductor light emitting device and comprising a plurality of projections of the principal surface, wherein an outer periphery of a bottom surface of each of the projections has at least one depression. This depression is in the horizontal direction. The plurality of projections are arranged so that a straight line passes through the inside of at least any one of projections when the straight line is drawn at any position in any direction in a plane including the bottom surfaces of the plurality of projections.Type: ApplicationFiled: June 9, 2015Publication date: September 24, 2015Applicant: NICHIA CORPORATIONInventors: Junya NARITA, Takuya OKADA, Yohei WAKAI, Yoshiki INOUE, Naoya SAKO, Katsuyoshi KADAN
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Patent number: 9070814Abstract: The sapphire substrate has a principal surface for growing a nitride semiconductor to form a nitride semiconductor light emitting device and comprising a plurality of projections of the principal surface, wherein an outer periphery of a bottom surface of each of the projections has at least one depression. This depression is in the horizontal direction. The plurality of projections are arranged so that a straight line passes through the inside of at least any one of projections when the straight line is drawn at any position in any direction in a plane including the bottom surfaces of the plurality of projections.Type: GrantFiled: June 25, 2014Date of Patent: June 30, 2015Assignee: NICHIA CORPORATIONInventors: Junya Narita, Takuya Okada, Yohei Wakai, Yoshiki Inoue, Naoya Sako, Katsuyoshi Kadan
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Publication number: 20150115307Abstract: [Technical Problem] A sapphire substrate and a method for manufacturing the same are provided, which enables growth of a nitride semiconductor having excellent crystallinity and can achieve a nitride semiconductor light emitting element having excellent light extraction efficiency. [Solution to Problem] A sapphire substrate provided with a plurality of projections on a principal surface on which a nitride semiconductor is grown to form a nitride semiconductor light emitting element, wherein the projection is substantially pyramidal-shaped having a pointed top and constituted by a plurality of side surfaces, wherein the side surface has an inclined angle of between 53° and 59° from a bottom surface of the projection, and wherein the side surface is crystal-growth-suppressed surface on which growth of nitride semiconductor is suppressed relative to the substrate surface located between the adjacent projections.Type: ApplicationFiled: January 9, 2015Publication date: April 30, 2015Inventors: Naoya SAKO, Takashi Ohara, Yoshiki Inoue, Yuki Shibutani, Yoshihito Kawauchi, Kazuyuki Takeichi, Yasunori Nagahama
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Patent number: 9012936Abstract: The sapphire substrate has a principal surface for growing a nitride semiconductor to form a nitride semiconductor light emitting device and comprising a plurality of projections of the principal surface, wherein an outer periphery of a bottom surface of each of the projections has at least one depression. This depression is in the horizontal direction. The plurality of projections are arranged so that a straight line passes through the inside of at least any one of projections when the straight line is drawn at any position in any direction in a plane including the bottom surfaces of the plurality of projections.Type: GrantFiled: August 5, 2011Date of Patent: April 21, 2015Assignee: Nichia CorporationInventors: Junya Narita, Takuya Okada, Yohei Wakai, Yoshiki Inoue, Naoya Sako, Katsuyoshi Kadan
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Patent number: 8957433Abstract: A sapphire substrate provided with a plurality of projections on a principal surface on which a nitride semiconductor is grown to form a nitride semiconductor light emitting element. The projections have a substantially triangular pyramidal-shape the projections having a plurality of side surfaces and a pointed top. The side surfaces have an inclination angle of between 53° and 59° from a bottom of the projections. The side surfaces are crystal-growth suppressed surfaces on which a growth of the nitride semiconductor is suppressed relative to a portion of the principal surface located between adjacent projections. A bottom of the projections has a substantially triangular shape having three outwardly curved arc-shaped sides, and each of the side surfaces has a substantially triangular shape having vertexes located at the top of the projection and at both ends of a respective side of the bottom of the projection.Type: GrantFiled: March 14, 2013Date of Patent: February 17, 2015Assignee: Nichia CorporationInventors: Naoya Sako, Takashi Ohara, Yoshiki Inoue, Yuki Shibutani, Yoshihito Kawauchi, Kazuyuki Takeichi, Yasunori Nagahama
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Publication number: 20140306265Abstract: The sapphire substrate has a principal surface for growing a nitride semiconductor to form a nitride semiconductor light emitting device and comprising a plurality of projections of the principal surface, wherein an outer periphery of a bottom surface of each of the projections has at least one depression. This depression is in the horizontal direction. The plurality of projections are arranged so that a straight line passes through the inside of at least any one of projections when the straight line is drawn at any position in any direction in a plane including the bottom surfaces of the plurality of projections.Type: ApplicationFiled: June 25, 2014Publication date: October 16, 2014Inventors: Junya NARITA, Takuya Okada, Yohei Wakai, Yoshiki Inoue, Naoya Sako, Katsuyoshi Kadan
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Patent number: 8847262Abstract: A sapphire substrate having a principal surface for growing a nitride semiconductor to form a nitride semiconductor light emitting device comprises a plurality of projections on the principal surface. Each of the projections has a bottom that has a substantially polygonal shape. Each side of the bottom of the projections has a depression in its center. Vertexes of the bottoms of the respective projections extend in a direction that is within a range of ±10 degrees of a direction that is rotated counter-clockwise by 30 degrees from a crystal axis “a” of the sapphire substrate.Type: GrantFiled: March 14, 2013Date of Patent: September 30, 2014Assignee: Nichia CorporationInventors: Junya Narita, Takuya Okada, Yohei Wakai, Yoshiki Inoue, Naoya Sako, Katsuyoshi Kadan
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Patent number: 8847263Abstract: A sapphire substrate having a principal surface for growing a nitride semiconductor to form a nitride semiconductor light emitting device comprises a plurality of projections on the principal surface. Each of the projections has a bottom that has a substantially polygonal shape. Each side of the bottom of the projections has a depression in its center. Vertexes of the bottoms of the respective projections extend in a direction that is within a range of ±10 degrees of a direction that is rotated clockwise by 30 degrees from a crystal axis “a” of the sapphire substrate.Type: GrantFiled: March 14, 2013Date of Patent: September 30, 2014Assignee: Nichia CorporationInventors: Junya Narita, Takuya Okada, Yohei Wakai, Yoshiki Inoue, Naoya Sako, Katsuyoshi Kadan
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Publication number: 20140061661Abstract: [Technical Problem] A sapphire substrate and a method for manufacturing the same are provided, which enables growth of a nitride semiconductor having excellent crystallinity and can achieve a nitride semiconductor light emitting element having excellent light extraction efficiency. [Solution to Problem] A sapphire substrate provided with a plurality of projections on a principal surface on which a nitride semiconductor is grown to form a nitride semiconductor light emitting element, wherein the projection is substantially pyramidal-shaped having a pointed top and constituted by a plurality of side surfaces, wherein the side surface has an inclined angle of between 53° and 59° from a bottom surface of the projection, and wherein the side surface is crystal-growth-suppressed surface on which growth of nitride semiconductor is suppressed relative to the substrate surface located between the adjacent projections.Type: ApplicationFiled: March 14, 2013Publication date: March 6, 2014Inventors: Naoya SAKO, Takashi Ohara, Yoshiki Inoue, Yuki Shibutani, Yoshihito Kawauchi, Kazuyuki Takeichi, Yasunori Nagahama
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Publication number: 20130285109Abstract: A sapphire substrate having a principal surface for growing a nitride semiconductor to form a nitride semiconductor light emitting device comprises a plurality of projections on the principal surface. Each of the projections has a bottom that has a substantially polygonal shape. Each side of the bottom of the projections has a depression in its center. Vertexes of the bottoms of the respective projections extend in a direction that is within a range of ±10 degrees of a direction that is rotated counter-clockwise by 30 degrees from a crystal axis “a” of the sapphire substrate.Type: ApplicationFiled: March 14, 2013Publication date: October 31, 2013Inventors: Junya NARITA, Takuya OKADA, Yohei WAKAI, Yoshiki INOUE, Naoya SAKO, Katsuyoshi KADAN
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Publication number: 20130270593Abstract: A sapphire substrate having a principal surface for growing a nitride semiconductor to form a nitride semiconductor light emitting device comprises a plurality of projections on the principal surface. Each of the projections has a bottom that has a substantially polygonal shape. Each side of the bottom of the projections has a depression in its center. Vertexes of the bottoms of the respective projections extend in a direction that is within a range of ±10 degrees of a direction that is rotated clockwise by 30 degrees from a crystal axis “a” of the sapphire substrate.Type: ApplicationFiled: March 14, 2013Publication date: October 17, 2013Inventors: Junya NARITA, Takuya OKADA, Yohei WAKAI, Yoshiki INOUE, Naoya SAKO, Katsuyoshi KADAN
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Publication number: 20120074431Abstract: The sapphire substrate has a principal surface for growing a nitride semiconductor to form a nitride semiconductor light emitting device and comprising a plurality of projections of the principal surface, wherein an outer periphery of a bottom surface of each of the projections has at least one depression. This depression is in the horizontal direction. The plurality of projections are arranged so that a straight line passes through the inside of at least any one of projections when the straight line is drawn at any position in any direction in a plane including the bottom surfaces of the plurality of projections.Type: ApplicationFiled: August 5, 2011Publication date: March 29, 2012Inventors: Junya NARITA, Takuya Okada, Yohei Wakai, Yoshiki Inoue, Naoya Sako, Katsuyoshi Kadan