Patents by Inventor Naoya Tuchiya

Naoya Tuchiya has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 6603341
    Abstract: A charge pump circuit receives a battery voltage of a power line, and outputs a raising voltage proportional to the battery voltage. A low voltage detecting circuit detects a low voltage state in which a detecting voltage obtained by dividing the raising voltage. Thus, it is possible to indirectly detect a low voltage state in which the battery voltage is lower than a predetermined threshold value. When the low voltage state is detected, a drive circuit turns off a MOSFET. At this time, the battery voltage is temporarily varied, but the charge pump circuit has a filter action and a delay action, whereby temporary variation does not easily appear in the raising voltage (detecting voltage), and an error in operation of the MOSFET can be prevented.
    Type: Grant
    Filed: June 21, 2001
    Date of Patent: August 5, 2003
    Assignees: Denso Corporation, Anden Co., Ltd.
    Inventors: Naoya Tuchiya, Takeshi Ishikawa, Fukuo Ishikawa
  • Publication number: 20020021150
    Abstract: In a load drive circuit, a charge pump circuit inputs a battery voltage of a power line, and outputs a raising voltage proportional to the battery voltage. A low voltage detecting circuit detects a low voltage state in which a detecting voltage obtained by dividing the raising voltage is lower than a reference voltage. Thus, it is possible to indirectly detect a low voltage state in which the battery voltage is lower than a predetermined threshold value. When the low voltage state is detected, a drive circuit turns off a MOSFET. At this time, the battery voltage is temporarily varied, but the charge pump circuit has a filter action and a delay action, whereby temporary variation does not easily appear in the raising voltage (detecting voltage), and an error in operation of the MOSFET can be prevented.
    Type: Application
    Filed: June 21, 2001
    Publication date: February 21, 2002
    Inventors: Naoya Tuchiya, Takeshi Ishikawa, Fukuo Ishikawa