Patents by Inventor Naoya Yamakado

Naoya Yamakado has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7045447
    Abstract: A semiconductor device producing method using a plasma processing apparatus including a processing chamber, a substrate-supporting body which supports a substrate in the processing chamber, and a cylindrical electrode and a magnetic lines of force-forming member disposed around the processing chamber, comprises forming an oxide film on the substrate, and thereafter, by changing a high frequency impedance of the substrate-supporting body, continuously forming an oxynitride film by nitriding the oxide film by activated species of nitrogen which are activated by plasma.
    Type: Grant
    Filed: March 26, 2003
    Date of Patent: May 16, 2006
    Assignee: Hitachi Kokusai Electric Inc.
    Inventors: Unryu Ogawa, Naoya Yamakado, Tadashi Terasaki, Shinji Yashima
  • Publication number: 20030224616
    Abstract: A semiconductor device producing method using a plasma processing apparatus including a processing chamber, a substrate-supporting body which supports a substrate in the processing chamber, and a cylindrical electrode and a magnetic lines of force-forming member disposed around the processing chamber, comprises forming an oxide film on the substrate, and thereafter, by changing a high frequency impedance of the substrate-supporting body, continuously forming an oxynitride film by nitriding the oxide film by activated species of nitrogen which are activated by plasma.
    Type: Application
    Filed: March 26, 2003
    Publication date: December 4, 2003
    Inventors: Unryu Ogawa, Naoya Yamakado, Tadashi Terasaki, Shinji Yashima