Abstract: A material for a semiconductor substrate is composed substantially of tungsten and/or molybdenum mixed with 5-30 wt. % copper, 0.002-0.07 wt. % phosphorus, and 0.1-0.5 wt. % one or two materials selected from among cobalt, nickel, and iron. The material is manufactured by mixing together tungsten powder and/or molybdenum powder of 1 .mu.m in particle size, copper powder of 7 .mu.m in particle size, and small amounts of an iron-group metal and phosphorus or phosphorus compound, molding the mixture at a pressure of 1.0 ton/cm.sup.2, and then, sintering the molded body at a temperature which allows solid and liquid to coexist below the melting point of copper.

Abstract: Copper-tungsten alloys used for materials of electrode, electric contacts, package materials for semiconductors, heat sink and their manufacturing methods. The copper-tungsten alloy contains preferably 5 to 30 wt. % of copper, 0.002 to 0.04 wt. % of phosphor, the remaining portion being substantially all tungsten, and it is preferable to contain in these alloys 0.1 to 0.5% of cobalt, nickel or iron or else any combined two out of these three.

Abstract: The method of the invention is concerned with the manufacture of a molded copper-chromium family metal based alloy article which involves the steps of injection-molding a mixture of copper powder, a chromium family metal powder, an iron family metal powder and a thermoplastic organic binder made up of a polymer binder and low molecular binder in a ratio by volume of 5:1 to 1:1, dewaxing a molded body formed by the injection-molding by heating in a reducing atmosphere, and then sintering the dewaxed molded body at 1,100.degree. to 1,450.degree. C. in a reducing atmosphere. According to this method, molded articles having a high dimensional accuracy and high density can be provided.