Patents by Inventor Naoyoshi Kawahara

Naoyoshi Kawahara has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Manufacturing method of semiconductor device
    Patent number: 6521505
    Abstract: In forming transistor electrodes, after a polysilicon film is formed, RF plasma etching is applied to the surface thereof to remove a natural oxidation film on the surface of the polysilicon film.
    Type: Grant
    Filed: September 3, 1999
    Date of Patent: February 18, 2003
    Assignee: NEC Corporation
    Inventor: Naoyoshi Kawahara
  • MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
    Publication number: 20020025674
    Abstract: After a polysilicon film 103 is formed, the RF plasma etching is applied to the surface thereof and thereby a natural oxidation film 104 on the surface of the polysilicon 103 is removed.
    Type: Application
    Filed: September 3, 1999
    Publication date: February 28, 2002
    Inventor: NAOYOSHI KAWAHARA