Patents by Inventor Naoyoshi Yoshida

Naoyoshi Yoshida has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20210327616
    Abstract: A chip varistor includes an element body exhibiting varistor characteristics, internal electrodes containing a first electrically conductive material, and an intermediate conductor containing a second electrically conductive material. The intermediate conductor is separated from the internal electrodes in a direction in which the internal electrodes oppose each other, and is disposed between the internal electrodes. At least a part of the intermediate conductor overlaps the internal electrodes in the direction in which the internal electrodes oppose each other. The element body includes a low resistance region in which the second electrically conductive material is diffused. The low resistance region is located between the first and second internal electrodes in the direction in which the first and second internal electrodes oppose each other.
    Type: Application
    Filed: April 14, 2021
    Publication date: October 21, 2021
    Applicant: TDK CORPORATION
    Inventors: Satoshi GOTO, Naoyoshi YOSHIDA, Takeshi YANATA, Takeshi OYANAGI, Daiki SUZUKI, Shin KAGAYA, Masayuki UCHIDA, Yusuke IMAI
  • Publication number: 20200154571
    Abstract: An electronic component includes an element body, a thin film layer disposed to cover a pair of end surfaces and four side surfaces, a first external electrode and a second external electrode, and internal conductors, wherein each of the first external electrode and the second external electrode has first electrode layers disposed on the thin film layer and electrically connected to the internal conductors, and second electrode layers disposed to cover the first electrode layers, and a thermal conductivity of the second electrode layers is lower than a thermal conductivity of the first electrode layers.
    Type: Application
    Filed: January 16, 2020
    Publication date: May 14, 2020
    Applicant: TDK CORPORATION
    Inventors: Naoyoshi YOSHIDA, Kouki YAMADA, Hisashi AIBA, Kazuto TAKEYA, Hiroya NAKAMURA
  • Patent number: 10575404
    Abstract: An electronic component includes an element body, a thin film layer disposed to cover a pair of end surfaces and four side surfaces, a first external electrode and a second external electrode, and internal conductors, wherein each of the first external electrode and the second external electrode has first electrode layers disposed on the thin film layer and electrically connected to the internal conductors, and second electrode layers disposed to cover the first electrode layers, and a thermal conductivity of the second electrode layers is lower than a thermal conductivity of the first electrode layers.
    Type: Grant
    Filed: September 18, 2018
    Date of Patent: February 25, 2020
    Assignee: TDK CORPORATION
    Inventors: Naoyoshi Yoshida, Kouki Yamada, Hisashi Aiba, Kazuto Takeya, Hiroya Nakamura
  • Publication number: 20190098761
    Abstract: An electronic component includes an element body, a thin film layer disposed to cover a pair of end surfaces and four side surfaces, a first external electrode and a second external electrode, and internal conductors, wherein each of the first external electrode and the second external electrode has first electrode layers disposed on the thin film layer and electrically connected to the internal conductors, and second electrode layers disposed to cover the first electrode layers, and a thermal conductivity of the second electrode layers is lower than a thermal conductivity of the first electrode layers.
    Type: Application
    Filed: September 18, 2018
    Publication date: March 28, 2019
    Applicant: TDK CORPORATION
    Inventors: Naoyoshi YOSHIDA, Kouki YAMADA, Hisashi AIBA, Kazuto TAKEYA, Hiroya NAKAMURA
  • Patent number: 10096408
    Abstract: A voltage nonlinear resistor ceramic comprises: a Zn oxide; a Co oxide; an R (specific rare earth) oxide; a Cr oxide; an M1 (Ca, Sr) oxide; an M2 (Al, Ga, In) oxide; and strontium titanate. When content of the Zn oxide is assumed to be 100 mole portion in terms of Zn, content of the Co oxide is 0.30 to 10 mole portion in terms of Co, content of the R oxide is 0.10 to 10 mole portion in terms of R, content of the Cr oxide is 0.01 to 2 mole portion in terms of Cr, content of the M1 oxide is 0.10 to 5 mole portion in terms of M1, content of the M2 oxide is 0.0005 to 5 mole portion in terms of M2, and content of the strontium titanate is 0.10 to 5 mole portion in terms of SrTiO3.
    Type: Grant
    Filed: June 17, 2016
    Date of Patent: October 9, 2018
    Assignee: TDK CORPORATION
    Inventors: Masayuki Uchida, Takahiro Itami, Naoyoshi Yoshida, Takeshi Oyanagi, Koki Yamada, Kazuaki Kajiwara
  • Publication number: 20160379739
    Abstract: A voltage nonlinear resistor ceramic comprises: a Zn oxide; a Co oxide; an R (specific rare earth) oxide; a Cr oxide; an M1 (Ca, Sr) oxide; an M2 (Al, Ga, In) oxide; and strontium titanate. When content of the Zn oxide is assumed to be 100 mole portion in terms of Zn, content of the Co oxide is 0.30 to 10 mole portion in terms of Co, content of the R oxide is 0.10 to 10 mole portion in terms of R, content of the Cr oxide is 0.01 to 2 mole portion in terms of Cr, content of the M1 oxide is 0.10 to 5 mole portion in terms of M1, content of the M2 oxide is 0.0005 to 5 mole portion in terms of M2, and content of the strontium titanate is 0.10 to 5 mole portion in terms of SrTiO3.
    Type: Application
    Filed: June 17, 2016
    Publication date: December 29, 2016
    Inventors: Masayuki UCHIDA, Takahiro ITAMI, Naoyoshi YOSHIDA, Takeshi OYANAGI, Koki YAMADA, Kazuaki KAJIWARA
  • Patent number: 9142340
    Abstract: An element body has first and second faces opposed to each other. A first conductor has one end exposed in a first face and the other end located in the element body. The second conductor has one end exposed in a second face and the other end located in the element body. The element body has a first element body section having the nonlinear voltage-current characteristics and a second element body section in which an electric current is more likely to flow than in the first element body section. The first element body section is located at least in part between the first conductor and the second conductor, in a direction in which the first conductor and the second conductor are separated from each other. The other end of the first conductor and the other end of the second conductor are located in the second element body section.
    Type: Grant
    Filed: December 11, 2013
    Date of Patent: September 22, 2015
    Assignee: TDK CORPORATION
    Inventors: Takahiro Itami, Naoyoshi Yoshida, Katsunari Moriai
  • Patent number: 9087623
    Abstract: A voltage nonlinear resistor ceramic composition comprises zinc oxide, with respect to 100 mol of said zinc oxide, 0.30 to 10 mol of Co oxide in terms of Co, 0.10 to 10 mol of R oxide (note that R is at least one selected from a group consisting of Y, La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu) in terms of R, 0.10 to 5 mol of Cr oxide in terms of Cr, 0.10 to 5 mol of oxide of at least one selected from Ca and Sr respectively in terms of Ca or Sr, 0.0005 to 5 mol of oxide of at least one selected from Al, Ga and In respectively in terms of Al, Ga or In, and 0.10 to 5 mol of barium titanate in terms of BaTiO3.
    Type: Grant
    Filed: December 10, 2013
    Date of Patent: July 21, 2015
    Assignee: TDK CORPORATION
    Inventors: Takahiro Itami, Naoyoshi Yoshida, Kaname Ueda
  • Publication number: 20140171289
    Abstract: A voltage nonlinear resistor ceramic composition comprises zinc oxide, with respect to 100 mol of said zinc oxide, 0.30 to 10 mol of Co oxide in terms of Co, 0.10 to 10 mol of R oxide (note that R is at least one selected from a group consisting of Y, La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu) in terms of R, 0.10 to 5 mol of Cr oxide in terms of Cr, 0.10 to 5 mol of oxide of at least one selected from Ca and Sr respectively in terms of Ca or Sr, 0.0005 to 5 mol of oxide of at least one selected from Al, Ga and In respectively in terms of Al, Ga or In, and 0.10 to 5 mol of barium titanate in terms of BaTiO3.
    Type: Application
    Filed: December 10, 2013
    Publication date: June 19, 2014
    Applicant: TDK Corporation
    Inventors: Takahiro ITAMI, Naoyoshi Yoshida, Kaname Ueda
  • Publication number: 20140167909
    Abstract: An element body has first and second faces opposed to each other. A first conductor has one end exposed in a first face and the other end located in the element body. The second conductor has one end exposed in a second face and the other end located in the element body. The element body has a first element body section having the nonlinear voltage-current characteristics and a second element body section in which an electric current is more likely to flow than in the first element body section. The first element body section is located at least in part between the first conductor and the second conductor, in a direction in which the first conductor and the second conductor are separated from each other. The other end of the first conductor and the other end of the second conductor are located in the second element body section.
    Type: Application
    Filed: December 11, 2013
    Publication date: June 19, 2014
    Applicant: TDK CORPORATION
    Inventors: Takahiro ITAMI, Naoyoshi YOSHIDA, Katsunari MORIAI
  • Patent number: 7754109
    Abstract: In a varistor element, Ca exists in the grain interior of grains consisting primarily of ZnO in a varistor element body and Ca also exists in a grain boundary. In this crystal structure Ca replaces oxygen defects in the grain interior of grains consisting primarily of ZnO, in the varistor element body to make the ceramic structure denser Such crystal structure also decreases a ratio of an element tending to degrade the stability of the temperature characteristic of the varistor element, e.g., Si as a firing aid, in the grain boundary between grains. As a result, the varistor element has a stable temperature characteristic, which can decrease change in capacitance and tan ? (thermal conversion factor of resistance) against change in temperature.
    Type: Grant
    Filed: February 25, 2008
    Date of Patent: July 13, 2010
    Assignee: TDK Corporation
    Inventors: Naoyoshi Yoshida, Hitoshi Tanaka, Dai Matsuoka
  • Patent number: 7683753
    Abstract: As for the voltage non-linear resistance element layer 2, sintered body (ceramics) having ZnO as main component is used. Said sintered body comprises Pr, Co, Ca and Na are added. Therefore, the ranges are 0.05 to 5.0 atm % of Pr, 0.1 to 20 atm % of Co, 0.01 to 5.0 atm % of Ca and 0.0001 to 0.0008 atm % of Na. When it is within the range, the capacitance changing rate at 85° C. with standard being 25° C. can be made to equal or less than 10%.
    Type: Grant
    Filed: March 25, 2008
    Date of Patent: March 23, 2010
    Assignee: TDK Corporation
    Inventors: Naoyoshi Yoshida, Hitoshi Tanaka, Dai Matsuoka
  • Patent number: 7507356
    Abstract: As for the voltage non-linear resistance element layer 2, a sintered body having ZnO as a main component is used. In this sintered body, Pr, Co, Ca, and either Cu or Ni are added. The ranges are; 0.05 to 5.0 atm % of Pr, 0.1 to 20 atm % of Co, 0.01 to 5.0 atm % of Ca, and 0.0005 to 0.05 atm % of either Cu or Ni. Within these ranges, the capacitance changing rate can be made to equal or less than 10 % at 85° C. when 25° C. is taken as standard.
    Type: Grant
    Filed: March 28, 2008
    Date of Patent: March 24, 2009
    Assignee: TDK Corporation
    Inventors: Naoyoshi Yoshida, Hitoshi Tanaka, Dai Matsuoka
  • Publication number: 20080238605
    Abstract: As for the voltage non-linear resistance element layer 2, sintered body (ceramics) having ZnO as main component is used. Said sintered body comprises Pr, Co, Ca and Na are added. Therefore, the ranges are 0.05 to 5.0 atm % of Pr, 0.1 to 20 atm % of Co, 0.01 to 5.0 atm % of Ca and 0.0001 to 0.0008 atm % of Na. When it is within the range, the capacitance changing rate at 85° C. with standard being 25° C. can be made to equal or less than 10%.
    Type: Application
    Filed: March 25, 2008
    Publication date: October 2, 2008
    Applicant: TDK CORPORATION
    Inventors: Naoyoshi Yoshida, Hitoshi Tanaka, Dai Matsuoka
  • Publication number: 20080241585
    Abstract: As for the voltage non-linear resistance element layer 2, a sintered body having ZnO as a main component is used. In this sintered body, Pr, Co, Ca, and either Cu or Ni are added. The ranges are; 0.05 to 5.0 atm % of Pr, 0.1 to 20 atm % of Co, 0.01 to 5.0 atm % of Ca, and 0.0005 to 0.05 atm % of either Cu or Ni. Within these ranges, the capacitance changing rate can be made to equal or less than 10 % at 85° C. when 25° C. is taken as standard.
    Type: Application
    Filed: March 28, 2008
    Publication date: October 2, 2008
    Applicant: TDK CORPORATION
    Inventors: Naoyoshi YOSHIDA, Hitoshi TANAKA, Dai MATSUOKA
  • Publication number: 20080210911
    Abstract: In a varistor element, Ca exists in the grain interior of grains consisting primarily of ZnO in a varistor element body and Ca also exists in a grain boundary. In this crystal structure Ca replaces oxygen defects in the grain interior of grains consisting primarily of ZnO, in the varistor element body to make the ceramic structure denser Such crystal structure also decreases a ratio of an element tending to degrade the stability of the temperature characteristic of the varistor element, e.g., Si as a firing aid, in the grain boundary between grains. As a result, the varistor element has a stable temperature characteristic, which can decrease change in capacitance and tan? (thermal conversion factor of resistance) against change in temperature.
    Type: Application
    Filed: February 25, 2008
    Publication date: September 4, 2008
    Applicant: TDK CORPORATION
    Inventors: Naoyoshi YOSHIDA, Hitoshi TANAKA, Dai MATSUOKA