Abstract: A biometric information authentication device includes a control unit, wherein, when a first biometric authentication is successfully completed based on biometric information acquired from an operator and registered biometric information preliminarily registered by a registered person and an operation for registering new registered biological information is subsequently performed, the control unit permits registration upon a successful second biometric authentication based on biometric information acquired again and the registered biometric information preliminarily registered by the registered person.

Abstract: A biometric information authenticating device includes a biometric information sensor to detect contact of an operating finger with a reading surface and to read biometric information of the operating finger, an illumination unit including at least one light source, and a control unit to indicate completion of reading of the biometric information by an illumination pattern including a combination of turning on and off of the at least one light source.

Abstract: To provide a crystallized glass substrate including a surface with a compressive stress layer, in which a compressive stress CS (MPa) on an outermost surface of the compressive stress layer is 400 to 1400 MPa, and DOL50%/DOLzero is 0.30 or more, where DOL50% (?m) is a depth at which the value of the compressive stress is 50% of the CS and DOLzero (?m) is a depth at which the value of the compressive stress is 0 MPa.

Abstract: To provide a crystallized glass substrate including a surface with a compressive stress layer, in which a stress depth DOLzero of the compressive stress layer, at which the compressive stress is 0 MPa, is 45 to 200 ?m, a compressive stress CS on an outermost surface of the compressive stress layer is 400 to 1400 MPa, and CS×DOLzero, which is a product of the compressive stress CS on the outermost surface and the stress depth DOLzero (?m), is 4.8×104 or more.

Abstract: To provide a crystallized glass substrate including a surface with a compressive stress layer, in which, CS is 400 to 1400 MPa and CT×(T?2×DOLzero)/CS×DOLzero is 0.60 or more, where CS (MPa) denotes a compressive stress on an outermost surface of the compressive stress layer, DOLzero (?m) denotes a stress depth of the compressive stress layer at which the compressive stress is 0 MPa, CT (MPa) denotes a central stress determined by curve analysis, and T (?m) denotes a thickness of the substrate.

Abstract: To provide a crystallized glass substrate including a surface with a compressive stress layer, where a stress depth DOLzero of the compressive stress layer, at which the compressive stress is 0 MPa, is 45 to 200 ?m, a compressive stress CS on an outermost surface of the compressive stress layer is 400 to 1400 MPa, and a central stress CT determined by using curve analysis is 55 to 300 MPa.

Abstract: To provide a crystallized glass substrate including a surface with a compressive stress layer, in which a stress depth DOLzero of the compressive stress layer, at which the compressive stress is 0 MPa, is 45 to 200 ?m, a compressive stress CS on an outermost surface of the compressive stress layer is 400 to 1400 MPa, and CS×DOLzero, which is a product of the compressive stress CS on the outermost surface and the stress depth DOLzero (?m), is 4.8×104 or more.

Abstract: To provide a crystallized glass substrate including a surface with a compressive stress layer, where a stress depth DOLzero of the compressive stress layer, at which the compressive stress is 0 MPa, is 45 to 200 ?m, a compressive stress CS on an outermost surface of the compressive stress layer is 400 to 1400 MPa, and a central stress CT determined by using curve analysis is 55 to 300 MPa.

Abstract: To provide a crystallized glass substrate including a surface with a compressive stress layer, in which a stress depth DOLzero of the compressive stress layer, at which the compressive stress is 0 MPa, is 45 to 200 ?m, a compressive stress CS on an outermost surface of the compressive stress layer is 400 to 1400 MPa, and CS×DOLzero, which is a product of the compressive stress CS on the outermost surface and the stress depth DOLzero (?m), is 4.8×104 or more.

Abstract: To provide a crystallized glass substrate including a surface with a compressive stress layer, where a stress depth DOLzero of the compressive stress layer, at which the compressive stress is 0 MPa, is 45 to 200 ?m, a compressive stress CS on an outermost surface of the compressive stress layer is 400 to 1400 MPa, and a central stress CT determined by using curve analysis is 55 to 300 MPa.

Abstract: To provide a crystallized glass substrate including a surface with a compressive stress layer, in which a stress depth DOLzero of the compressive stress layer, at which the compressive stress is 0 MPa, is 45 to 200 ?m, a compressive stress CS on an outermost surface of the compressive stress layer is 400 to 1400 MPa, and CS×DOLzero, which is a product of the compressive stress CS on the outermost surface and the stress depth DOLzero(?m), is 4.8×104 or more.

Abstract: To provide a crystallized glass substrate that is hard and resistant to fracture and that is also resistant to shattering upon breakage. A crystallized glass substrate includes a crystallized glass serving as a base material and a compressive stress layer forming a surface thereof. The crystallized glass contains, in % by weight on an oxide basis, 40.0% to 70.0% of a SiO2 component, 11.0% to 25.0% of an Al2O3 component, 5.0% to 19.0% of a Na2O component, 0% to 9.0% of a K2O component, 1.0% to 18.0% of one or more selected from a MgO component and a ZnO component, 0% to 3.0% of a CaO component, and 0.5% to 12.0% of a TiO2 component. The SiO2 component, the Al2O3 component, the Na2O component, the one or more selected from the MgO component and the ZnO component, and the TiO2 component are present in a total amount of 90% or more. The compressive stress layer has a depth of layer of 40 ?m or more. The compressive stress layer has a surface compressive stress of 750 MPa or more.

Abstract: A crystallized glass includes a crystallized glass mother material, and, in a surface, a compressive stress layer, wherein the crystallized glass has, for a thickness of 10 mm, a light transmittance of, including reflection loss, 80% at a wavelength in 400 to 669 nm, and has a Vickers hardness [Hv] of 835 to 1300. In the crystallized glass, the crystallized glass mother material contains, in % by weight on an oxide basis, 40.0% to 70.0% of a SiO2 component, 11.0% to 25.0% of an Al2O3 component, 5.0% to 19.0% of a Na2O component, 0% to 9.0% of a K2O component, 1.0% to 18.0% of a MgO component, 0% to 3.0% of a CaO component, and 0.5% to 12.0% of a TiO2 component, and a total content of the SiO2 component, the Al2O3 component, the Na2O component, the K2O component, the MgO component, and the TiO2 component is 90% or more.

Abstract: To provide a crystallized glass substrate including a surface with a compressive stress layer, where a stress depth DOLzero of the compressive stress layer, at which the compressive stress is 0 MPa, is 45 to 200 ?m, a compressive stress CS on an outermost surface of the compressive stress layer is 400 to 1400 MPa, and a central stress CT determined by using curve analysis is 55 to 300 MPa.

Abstract: A method for manufacturing a crystallized glass member having a curved shape includes a deforming step of deforming at least a portion of a glass plate into a curved shape by an external force that acts on the glass plate while maintaining the temperature of the glass plate within a first temperature range and precipitating crystals from the glass plate. In the method for manufacturing a crystallized glass member having a curved shape according to Claim 1, the first temperature range is from [At ?40]° C. to [At +40]° C., wherein At (° C.) is a yield point of the glass plate.

Abstract: To provide a crystallized glass substrate including a surface with a compressive stress layer, in which, CS is 400 to 1400 MPa and CT×(T?2×DOLzero)/CS×DOLzero is 0.60 or more, where CS (MPa) denotes a compressive stress on an outermost surface of the compressive stress layer, DOLzero (?m) denotes a stress depth of the compressive stress layer at which the compressive stress is 0 MPa, CT (MPa) denotes a central stress determined by curve analysis, and T (?m) denotes a thickness of the substrate.

Abstract: To provide a crystallized glass substrate including a surface with a compressive stress layer, in which a compressive stress CS (MPa) on an outermost surface of the compressive stress layer is 400 to 1400 MPa, and DOL50%/DOLzero is 0.30 or more, where DOL50% (?m) is a depth at which the value of the compressive stress is 50% of the CS and DOLzero (?m) is a depth at which the value of the compressive stress is 0 MPa.

Abstract: A crystallized glass substrate includes a crystallized glass serving as a base material and a compressive stress layer forming a surface thereof. The crystallized glass contains, in % by weight on an oxide basis, 40.0% to 70.0% of a SiO2 component, 11.0% to 25.0% of an Al2O3 component, 5.0% to 19.0% of a Na2O component, 0% to 9.0% of a K2O component, 1.0% to 18.0% of one or more selected from a MgO component and a ZnO component, 0% to 3.0% of a CaO component, and 0.5% to 12.0% of a TiO2 component. The SiO2 component, the Al2O3 component, the Na2O component, the one or more selected from the MgO component and the ZnO component, and the TiO2 component are present in a total amount of 90% or more.

Abstract: A crystallized glass includes a crystallized glass mother material, and, in a surface, a compressive stress layer, wherein the crystallized glass has, for a thickness of 10 mm, a light transmittance of, including reflection loss, 80% at a wavelength in 400 to 669 nm, and has a Vickers hardness [Hv] of 835 to 1300. In the crystallized glass, the crystallized glass mother material contains, in % by weight on an oxide basis, 40.0% to 70.0% of a SiO2 component, 11.0% to 25.0% of an Al2O3 component, 5.0% to 19.0% of a Na2O component, 0% to 9.0% of a K2O component, 1.0% to 18.0% of a MgO component, 0% to 3.0% of a CaO component, and 0.5% to 12.0% of a TiO2 component, and a total content of the SiO2 component, the Al2O3 component, the Na2O component, the K2O component, the MgO component, and the TiO2 component is 90% or more.

Abstract: In an ion bombardment apparatus of the present invention, a heating type thermal electron emission electrode formed by a filament is placed on one inner surface of a vacuum chamber, an anode for receiving a thermal electron from the thermal electron emission electrode is placed on another inner surface of the vacuum chamber, and a base material is placed between the thermal electron emission electrode and the anode. Further, the ion bombardment apparatus has a discharge power supply for generating a glow discharge upon application of a potential difference between the thermal electron emission electrode and the anode, a heating power supply for heating the thermal electron emission electrode so as to emit the thermal electron, and a bias power supply for applying negative pulse-shaped bias potential with respect to the vacuum chamber to the base material.