Abstract: A method for polishing a silicon carbide crystal substrate according to the present invention includes a polishing process of polishing a silicon carbide crystal substrate having a surface roughness Rz of at most 50 ?m, using an abrasive solution containing abrasive particles made of boron carbide. Accordingly, it is possible, by using boron carbide as abrasive particles instead of conventionally used diamond, to reduce the damage caused to silicon carbide crystals, which constitute the material to be polished, and to the surface of the polishing surface plate, and to perform surface polishing precisely.

Abstract: A method for polishing a silicon carbide crystal substrate according to the present invention includes a polishing process of polishing a silicon carbide crystal substrate having a surface roughness Rz of at most 50 ?m, using an abrasive solution containing abrasive particles made of boron carbide. Accordingly, it is possible, by using boron carbide as abrasive particles instead of conventionally used diamond, to reduce the damage caused to silicon carbide crystals, which constitute the material to be polished, and to the surface of the polishing surface plate, and to perform surface polishing precisely.

Abstract: A method for manufacturing a SiC substrate includes a polishing step of polishing the surface of a plate-shaped SiC material by moving a polishing pad, obtained by applying an abrasive to a pad, relative to the surface of the SiC material in a state where the polishing pad is in contact with the SiC material, and the abrasive contains colloidal silica and a dispersion medium in which the colloidal silica is dispersed and the abrasive has a pH of 4 to 9. Thus, it is possible to suppress processing damage and cracks while alleviating the burden on a polishing apparatus or on the environment. Consequently, a SiC substrate with a small surface roughness and high reliability can be manufactured.