Abstract: In order to solve the foregoing problem, the present disclosure provides an imaging device composed of a plurality of pixels, wherein a first pixel among the plurality of pixels includes: a first photoelectric conversion element; a first power storage unit; a first transfer element that enables a conductive state or a non-conductive state between the first photoelectric conversion element and the first power storage unit; and a first amplifying element that amplifies an image signal on the basis of a charge stored by photoelectric conversion in at least any of adjacent pixels, including a second pixel, that are adjacent to the first pixel, the second pixel including: a second amplifying element that amplifies an image signal based on a charge stored in the first power storage unit by photoelectric conversion of the first photoelectric conversion element, and a second distance between the first power storage unit and the second amplifying element is shorter than a first distance between the first power storage

Abstract: An imaging device including an imaging unit in which a plurality of shared sections each including two pixel regions adjacent at least in a first direction is provided and the shared sections provided at closest positions in a second direction are disposed to shift in the first direction by the one pixel region, a photoelectric converter provided for each of the pixel regions, an electric charge holding unit that holds signal charge generated by the photoelectric converter, an electric charge voltage converter to which the signal charge is transferred from the electric charge holding unit, and a pixel transistor that is electrically coupled to the electric charge voltage converter. The second direction intersects the first direction. The pixel transistor is provided for each of the shared sections.

Abstract: An imaging element is disclosed that includes: a semiconductor substrate; a multilayer wiring layer; a plurality of structures; and a light reflecting layer. The semiconductor substrate has a first surface as a light incidence surface and a second surface opposite to the first surface. A light receiving section of the semiconductor substrate generates electric charge through photoelectric conversion. The multilayer wiring layer has a plurality of wiring layers and is on the second surface side of the semiconductor substrate. The plurality of structures is in the multilayer wiring layer. The light reflecting layer is in the multilayer wiring layer, and forms a reflective region or a non-reflective region in a region with the interlayer insulating layer interposed in between. The region has none of the structures formed therein. The reflective region and the non-reflective region are substantially symmetrical with respect to the optical center of the pixel.

Abstract: An imaging device including: an imaging unit in which a plurality of shared sections each including two pixel regions adjacent at least in a first direction is provided and the shared sections provided at closest positions in a second direction are disposed to shift in the first direction by the one pixel region; a photoelectric converter provided for each of the pixel regions; an electric charge holding unit that holds signal charge generated by the photoelectric converter; an electric charge voltage converter to which the signal charge is transferred from the electric charge holding unit; and a pixel transistor that is electrically coupled to the electric charge voltage converter. The second direction intersects the first direction. The pixel transistor is provided for each of the shared sections.